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BSC036NE7NS3GATMA1

BSC036NE7NS3GATMA1
Mfr. #:
BSC036NE7NS3GATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 75V 100A TDSON-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC036NE7NS3GATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
75 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
3.6 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.3 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
63.4 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
156 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
50 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
18 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
38 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
BSC036NE7NS3 BSC36NE7NS3GXT G SP000907920
Tags
BSC036, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 75 V 3.6 mOhm 63.4 nC OptiMOS™ Power Mosfet - TDSON-8
***p One Stop
Trans MOSFET N-CH 75V 20A Automotive 8-Pin TDSON EP T/R
***ment14 APAC
MOSFET, N-CH, 75V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:75V; On Resistance
***nell
MOSFET, N-CH, 75V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0029ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 156W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***ark
MOSFET Transistor, N Channel, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V
***ure Electronics
Single N-Channel 75 V 4.2 mOhm 69 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 75V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:75V; On Resistance
***nell
MOSFET, N CH, 75V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 125W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
The 75V OptiMOS technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest on-state resistances and superior switching performance. | Summary of Features: Optimized technology for synchronous rectification; Best switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RohS compliant - halogen free; MSL1 rated | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 1248V systems (i.e. fans for servers, domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems); Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers
***Yang
Trans MOSFET N-CH 60V 23A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled
***ure Electronics
Single N-Channel 60 V 2.8 mOhm 132 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 60V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Source Voltage Vds:60V; On Resistance
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N CH, 60V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0023ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 139W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***ark
PT7 60V/20V Nch PowerTrench Mosfet - 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM
***emi
N-Channel PowerTrench® MOSFET 60V, 129A, 3.4mΩ
***ment14 APAC
MOSFET, N-CH, 60V, 129A, POWER 56; Transistor Polarity:N Channel; Continuous Drain Current Id:129A; Source Voltage Vds:60V; On Resistance
*** Stop Electro
Power Field-Effect Transistor, 20A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***enic
60V 129A 2.7m´Î@10V20A 96W 3.2V@250uA 50pF@30V N Channel 4.837nF@30V 53nC@0~8V -55¡Í~+150¡Í@(Tj) Power-56-8 MOSFETs ROHS
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.
***nell
MOSFET, N-CH, 60V, 129A, POWER 56; Transistor Polarity: N Channel; Continuous Drain Current Id: 129A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.2V; Power Dissipation Pd: 96W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
*** Source Electronics
Trans MOSFET N-CH 60V 15A Automotive 8-Pin TDSON EP T/R / OptiMOS3 Power-Transistor
***ure Electronics
Single N-Channel 60 V 12.1 mOhm 30 nC OptiMOS™ Power Mosfet - TDSON-8
***ineon SCT
OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TDSON-8, RoHS
***nell
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:69W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SuperSOT; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
***ineon
OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
***emi
N-Channel PowerTrench® MOSFET 80V, 100A, 3.9mΩ
***r Electronics
Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
*** Electronics
In a Pack of 5, N-Channel MOSFET, 50 A, 136 A, 60 V, 3-Pin DPAK ON Semiconductor FDD86540
***ure Electronics
N-Channel 60 V 21.5 A 4.1 mOhm 65 nC Surface Mount PowerTrench Mosfet - TO-252
***emi
PowerTrench® MOSFET, N-Channel, 60V, 136 A, 4.1 mΩ
***nell
MOSFET, N-CH, 60V, 136A, 127W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 136A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3
***r Electronics
Power Field-Effect Transistor, 21.5A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Teil # Mfg. Beschreibung Aktie Preis
BSC036NE7NS3GATMA1
DISTI # V72:2272_06378072		Infineon Technologies AGTrans MOSFET N-CH 75V 20A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		5176
  • 3000:$1.4340
  • 1000:$1.4510
  • 500:$1.7200
  • 250:$1.8650
  • 100:$1.9740
  • 25:$2.0850
  • 10:$2.1080
  • 1:$2.4340
BSC036NE7NS3GATMA1
DISTI # BSC036NE7NS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 75V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.5817
BSC036NE7NS3GATMA1
DISTI # BSC036NE7NS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 75V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.7819
  • 500:$2.1129
  • 100:$2.6093
  • 10:$3.1820
  • 1:$3.5600
BSC036NE7NS3GATMA1
DISTI # BSC036NE7NS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 75V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.7819
  • 500:$2.1129
  • 100:$2.6093
  • 10:$3.1820
  • 1:$3.5600
BSC036NE7NS3GATMA1
DISTI # 31353643		Infineon Technologies AGTrans MOSFET N-CH 75V 20A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		5176
  • 5:$2.4340
BSC036NE7NS3GXT
DISTI # BSC036NE7NS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 75V 20A 8-Pin TDSON - Tape and Reel (Alt: BSC036NE7NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.5900
  • 10000:$1.4900
  • 20000:$1.4900
  • 30000:$1.3900
  • 50000:$1.3900
BSC036NE7NS3GATMA1
DISTI # 50Y1801		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 75 V, 0.0029 ohm, 10 V, 3.1 V RoHS Compliant: Yes4400
  • 1:$2.9800
  • 10:$2.5300
  • 25:$2.4200
  • 50:$2.3100
  • 100:$2.2000
  • 250:$2.0800
  • 500:$1.8700
  • 1000:$1.5800
BSC036NE7NS3 G
DISTI # 726-BSC036NE7NS3G		Infineon Technologies AGMOSFET N-Ch 75V 100A TDSON-8
RoHS: Compliant		2454
  • 1:$2.9800
  • 10:$2.5300
  • 100:$2.2000
  • 250:$2.0800
  • 500:$1.8700
  • 1000:$1.5800
  • 2500:$1.5000
  • 5000:$1.4400
BSC036NE7NS3GATMA1
DISTI # 726-BSC036NE7NS3GATM		Infineon Technologies AGMOSFET N-Ch 75V 100A TDSON-8
RoHS: Compliant		0
  • 1:$2.9800
  • 10:$2.5300
  • 100:$2.2000
  • 250:$2.0800
  • 500:$1.8700
  • 1000:$1.5800
  • 2500:$1.5000
  • 5000:$1.4400
BSC036NE7NS3GATMA1
DISTI # 2480736		Infineon Technologies AGMOSFET, N-CH, 75V, 100A, TDSON-8
RoHS: Compliant		4400
  • 1:$4.7200
  • 10:$4.0100
  • 100:$3.4900
  • 250:$3.2900
  • 500:$2.9700
  • 1000:$2.5000
  • 2500:$2.3800
  • 5000:$2.2800
BSC036NE7NS3GATMA1
DISTI # 2480736RL		Infineon Technologies AGMOSFET, N-CH, 75V, 100A, TDSON-8
RoHS: Compliant		0
  • 1:$4.7200
  • 10:$4.0100
  • 100:$3.4900
  • 250:$3.2900
  • 500:$2.9700
  • 1000:$2.5000
  • 2500:$2.3800
  • 5000:$2.2800
BSC036NE7NS3GATMA1
DISTI # C1S322000281668		Infineon Technologies AGTrans MOSFET N-CH 75V 20A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		5176
  • 1:$2.2100
BSC036NE7NS3GATMA1
DISTI # 2480736		Infineon Technologies AGMOSFET, N-CH, 75V, 100A, TDSON-8
RoHS: Compliant		6318
  • 1:£3.2400
  • 10:£2.4400
  • 100:£2.1200
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von BSC036NE7NS3GATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,97 $
2,97 $
10
2,52 $
25,20 $
100
2,19 $
219,00 $
250
2,07 $
517,50 $
500
1,86 $
930,00 $
1000
1,57 $
1 570,00 $
2500
1,49 $
3 725,00 $
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