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IXFR44N50Q3

IXFR44N50Q3
Mfr. #:
IXFR44N50Q3
Hersteller:
Littelfuse
Beschreibung:
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/25A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFR44N50Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR44N50Q3 DatasheetIXFR44N50Q3 Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFR44N50Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
25 A
Rds On - Drain-Source-Widerstand:
154 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
93 nC
Pd - Verlustleistung:
300 W
Aufbau:
Single
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
IXFR44N50
Transistortyp:
1 N-Channel
Marke:
IXYS
Produktart:
MOSFET
Anstiegszeit:
250 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.056438 oz
Tags
IXFR44N5, IXFR44, IXFR4, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 500V 25A 3-Pin(3+Tab) ISOPLUS 247
***el Electronic
MOSFET Q3Class HiPerFET Pwr MOSFET 500V/25A
***i-Key
MOSFET N-CH 500V 25A ISOPLUS247
***r Electronics
Power Field-Effect Transistor, 29A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 600 V 110 mOhm Flange Mount FDmesh II Power Mosfet - TO-247-3
***ical
Trans MOSFET N-CH 600V 29A Automotive 3-Pin(3+Tab) TO-247 Tube
***ark
MOSFET, N-CH, AEC-Q101, 600V, 29A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:29A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***nell
MOSFET, N-CH, AUTO, 600V, 29A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 29A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.097ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 190W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: FDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***emi
N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 28A, 130mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 28A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
***ical
Trans MOSFET N-CH Si 650V 27.6A 3-Pin(3+Tab) TO-247 Tube
***i-Key
MOSFET N-CH 650V 27.6A TO247
***
POWER MOSFET TRANSISTOR
***Yang
MOSFET Automotive-grade N-channel 600 V, 0.094 Ohm typ 28 A MDmesh DM2 Power MOSFET
***r Electronics
Power Field-Effect Transistor, 28A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
MOSFET, N-CH, 600V, 28A, TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.094ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, UniFETTM, FRFET®, 500 V, 45 A, 120 mΩ, TO-247
***el Electronic
N-Channel UniFETTM FRFET® MOSFET 500V, 45A, 120mΩ, TO-247 3L, 3600-RAIL
*** Stop Electro
Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100nsec and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET’s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***ark
X35 Pb-F Power Mosfet Transistor To-247(Os) Pd=180W F=1Mhz
***ical
Trans MOSFET N-CH Si 600V 25A 3-Pin(3+Tab) TO-247 Tube
***
POWER MOSFET TRANSISTOR
***el Electronic
IC SUPERVISOR
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFR44N50Q3
DISTI # IXFR44N50Q3-ND		IXYS CorporationMOSFET N-CH 500V 25A ISOPLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		40In Stock
  • 120:$15.3340
  • 30:$16.6870
  • 1:$19.8400
IXFR44N50Q3
DISTI # 747-IXFR44N50Q3		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 500V/25A
RoHS: Compliant		45
  • 1:$20.7400
  • 10:$18.8600
  • 25:$17.4400
  • 50:$16.0500
  • 100:$15.6600
  • 250:$14.3500
  • 500:$13.0200
Bild Teil # Beschreibung
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Mfr.#: RC1210FR-0712KL

OMO.#: OMO-RC1210FR-0712KL-YAGEO

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OMO.#: OMO-L6205N-STMICROELECTRONICS

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Mfr.#: DSEC29-06AC

OMO.#: OMO-DSEC29-06AC-IXYS-CORPORATION

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DSS4540X-13

Mfr.#: DSS4540X-13

OMO.#: OMO-DSS4540X-13-DIODES

 Bipolar Transistors - BJT LOW VCE(SAT) NPN SMT
Verfügbarkeit
Aktie:
35
Auf Bestellung:
2018
Menge eingeben:
Der aktuelle Preis von IXFR44N50Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
20,74 $
20,74 $
10
18,86 $
188,60 $
25
17,44 $
436,00 $
50
16,05 $
802,50 $
100
15,66 $
1 566,00 $
250
14,35 $
3 587,50 $
500
13,02 $
6 510,00 $
1000
11,89 $
11 890,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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