HGTG11N120CND

Mfr. #:: HGTG11N120CND
Hersteller:: ON Semiconductor
Beschreibung:: IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: HGTG11N120CND Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Fairchild Semiconductor

Produktkategorie: IGBTs - Single

Serie: -

Verpackung: Rohr

Teil-Aliasnamen: HGTG11N120CND_NL

Gewichtseinheit: 0.225401 oz

Montageart: Durchgangsloch

Paket-Koffer: TO-247-3

Eingabetyp: Standard

Befestigungsart: Durchgangsloch

Lieferanten-Geräte-Paket: TO-247

Aufbau: Single

Leistung max: 298W

Reverse-Recovery-Time-trr: 70ns

Strom-Kollektor-Ic-Max: 43A

Spannungs-Kollektor-Emitter-Breakdown-Max: 1200V

IGBT-Typ: NPT

Strom-Kollektor-gepulster-Icm: 80A

Vce-on-Max-Vge-Ic: 2.4V @ 15V, 11A

Schaltenergie: 950μJ (on), 1.3mJ (off)

Gate-Gebühr: 100nC

Td-ein-aus-25°C: 23ns/180ns

Testbedingung: 960V, 11A, 10 Ohm, 15V

Pd-Verlustleistung: 298 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Kollektor-Emitter-Spannung-VCEO-Max: 1200 V

Kollektor-Emitter-Sättigungsspannung: 2.1 V

Kontinuierlicher Kollektorstrom-bei-25-C: 43 A

Gate-Emitter-Leckstrom: +/- 250 nA

Maximale Gate-Emitter-Spannung: +/- 20 V

Kontinuierlicher Kollektor-Strom-Ic-Max: 43 A

Tags: HGTG11N120CND, HGTG11N120C, HGTG11N12, HGTG11N1, HGTG11, HGTG1, HGTG, HGT

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG11N120CND Beschreibung

***inecomponents.com: 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

***p One Stop Japan: Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247

***et: PWR IGBT 35A 1200V NPT N-CHANNEL W/DIODE TO-247

***i-Key: IGBT NPT N-CH 1200V 43A TO-247

*** Source Electronics: IGBT 1200V 43A 298W TO247

***ser: IGBTs 35A, 1200V, N-Ch

***Semiconductor: 1200V, NPT IGBT

***an P&S: 1200V NPT IGBT

***nell: IGBT, N; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:43A; Voltage, Vce Sat Max:2.4V; Power Dissipation:298W; Case Style:TO-247; Termination Type:SMD

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:43A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:298W; Package/Case:TO-247; C-E Breakdown Voltage:1200V ;RoHS Compliant: Yes

***rchild Semiconductor: HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

***ment14 APAC: IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
HGTG11N120CND DISTI # C1S226600594853	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail RoHS: Compliant	3280	1020:$1.6200 510:$1.7400 120:$2.2800 60:$2.4800 30:$3.0200
HGTG11N120CND DISTI # HGTG11N120CND-ND	ON Semiconductor	IGBT 1200V 43A 298W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	422In Stock	1350:$1.8282 900:$2.1678 450:$2.4159 10:$3.1080 1:$3.4600
HGTG11N120CND DISTI # HGTG11N120CND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 1	Europe - 150	1:€1.7900 10:€1.6900 25:€1.4900 50:€1.4900 100:€1.3900 500:€1.2900 1000:€1.2900
HGTG11N120CND DISTI # HGTG11N120CND	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$1.3900 452:$1.3900 902:$1.3900 2250:$1.3900 4500:$1.3900
HGTG11N120CND DISTI # 58K8900	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8900) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$3.3000 10:$2.8000 25:$2.6800 50:$2.5500 100:$2.4300 250:$2.3100 500:$2.0700
HGTG11N120CND DISTI # 58K8900	ON Semiconductor	SINGLE IGBT, 1.2KV, 43A,DC Collector Current:43A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	442	1:$3.4400 10:$2.9400 25:$2.8200 50:$2.6900 100:$2.5700 250:$2.4500 500:$2.2100
HGTG11N120CND	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	2679	1000:$1.8300 500:$1.9300 100:$2.0000 25:$2.0900 1:$2.2500
HGTG11N120CND DISTI # 512-HGTG11N120CND	ON Semiconductor	IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde RoHS: Compliant	191	1:$3.3000 10:$2.8000 100:$2.4300 250:$2.3100
HGTG11N120CND	ON Semiconductor	HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247 RoHS: Compliant	1800Tube	5:$2.1600 50:$1.9700 300:$1.6400
HGTG11N120CND DISTI # HGTG11N120CND	ON Semiconductor	Transistor: IGBT,1.2kV,22A,298W,TO247	39	1:$4.3900 3:$3.7700 10:$3.0400 30:$2.7300
HGTG11N120CND	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 200
HGTG11N120CND	Fairchild Semiconductor Corporation	INSTOCK	1180
HGTG11N120CND DISTI # 1611490	ON Semiconductor	IGBT, N RoHS: Compliant	849	1:$5.2200 10:$4.4400 100:$3.8500
HGTG11N120CND DISTI # 1611490	ON Semiconductor	IGBT, N RoHS: Compliant	872	1:£2.8700 10:£2.1600 100:£1.8800 250:£1.7700 500:£1.6000

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: HGTG11N120CN OMO.#: OMO-HGTG11N120CN	IGBT Transistors 43A 1200V N-Ch
	Mfr.#: HGTG11N120CND OMO.#: OMO-HGTG11N120CND-ON-SEMICONDUCTOR	IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
	Mfr.#: HGTG11N120 OMO.#: OMO-HGTG11N120-1190	Neu und Original
	Mfr.#: HGTG11N120CN OMO.#: OMO-HGTG11N120CN-ON-SEMICONDUCTOR	IGBT 1200V 43A 298W TO247
	Mfr.#: HGTG11N120CND,HGTG11N120 OMO.#: OMO-HGTG11N120CND-HGTG11N120-1190	Neu und Original
	Mfr.#: HGTG11N120CND? OMO.#: OMO-HGTG11N120CND--1190	NPTPIGBT TO247 43A 1200V
	Mfr.#: HGTG11N120CND_NL OMO.#: OMO-HGTG11N120CND-NL-1190	Neu und Original
	Mfr.#: HGTG11N120GND OMO.#: OMO-HGTG11N120GND-1190	Neu und Original
	Mfr.#: HGTG11N60A4 OMO.#: OMO-HGTG11N60A4-1190	Neu und Original
	Mfr.#: HGTG11N120CND-- OMO.#: OMO-HGTG11N120CND---1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von HGTG11N120CND dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,94 $~~; ~~1,94 $~~

10: ~~1,84 $~~; ~~18,38 $~~

100: ~~1,74 $~~; ~~174,15 $~~

500: ~~1,64 $~~; ~~822,40 $~~

1000: ~~1,55 $~~; ~~1 548,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

HGTG11N120CND

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes