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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| FMR11N90E DISTI # FE0000000001044 | Fuji Electric Co Ltd | Power Field-Effect Transistor, 11A I(D), 900V,1ohm,1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET RoHS: Compliant | 0 in Stock0 on Order | |
| FMR11N90ESC DISTI # FE0000000004650 | Fuji Electric Co Ltd | MOSFET RoHS: Compliant | 0 in Stock0 on Order |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: FMR11988 OMO.#: OMO-FMR11988-1190 |
Neu und Original |
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Mfr.#: FMR11N90E OMO.#: OMO-FMR11N90E-1190 |
Power Field-Effect Transistor, 11A I(D), 900V,1ohm,1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMR17N60ES OMO.#: OMO-FMR17N60ES-1190 |
Power Field-Effect Transistor, 17A I(D),600V,0.4ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET |
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Mfr.#: FMR19N60E OMO.#: OMO-FMR19N60E-1190 |
Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |
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Mfr.#: FMR19N60E,FMR19N60E-51FR |
Neu und Original |
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Mfr.#: FMR19N60E-51FR OMO.#: OMO-FMR19N60E-51FR-1190 |
Neu und Original |
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Mfr.#: FMR19N60ES OMO.#: OMO-FMR19N60ES-1190 |
Power Field-Effect Transistor, 19A I(D),600V,0.365ohm, 1-Element, N-Channel,Silicon,Metal-oxide Semiconductor FET |
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Mfr.#: FMR19N60ES-F236R OMO.#: OMO-FMR19N60ES-F236R-1190 |
Neu und Original |
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Mfr.#: FMR1550FAER1003 OMO.#: OMO-FMR1550FAER1003-1190 |
Neu und Original |
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Mfr.#: FMR1101-104 OMO.#: OMO-FMR1101-104-1190 |
CONNECTOR |