STGB15M65DF2

Mfr. #:: STGB15M65DF2
Hersteller:: STMicroelectronics
Beschreibung:: IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: STGB15M65DF2 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: STGB15M65DF2 Mehr Informationen STGB15M65DF2 Product Details

Produkteigenschaft
Attributwert

Hersteller:: STMicroelectronics

Produktkategorie:: IGBT-Transistoren

RoHS:: Y

Technologie:: Si

Paket / Koffer:: D2PAK-3

Montageart:: SMD/SMT

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 650 V

Kollektor-Emitter-Sättigungsspannung:: 1.55 V

Maximale Gate-Emitter-Spannung:: 20 V

Kontinuierlicher Kollektorstrom bei 25 C:: 30 A

Pd - Verlustleistung:: 136 W

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Serie:: STGB15M65DF2

Verpackung:: Spule

Kontinuierlicher Kollektorstrom Ic Max:: 30 A

Marke:: STMicroelectronics

Gate-Emitter-Leckstrom:: +/- 250 uA

Produktart:: IGBT-Transistoren

Werkspackungsmenge:: 1000

Unterkategorie:: IGBTs

Tags: STGB15, STGB1, STGB, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGB15M65DF2 Beschreibung

***icroelectronics: Trench gate field-stop IGBT M series, 650 V 15 A low loss

***ow.cn: Trans IGBT Chip N-CH 650V 30A 136000mW 3-Pin(2+Tab) D2PAK T/R

***icroelectronics SCT: Short-circuit rugged IGBT, D2PAK, Tape and Reel

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-263AB

***i-Key: TRENCH GATE FIELD-STOP IGBT M SE

***ical: Trans IGBT Chip N-CH 600V 30A 130000mW 3-Pin(2+Tab) D2PAK T/R

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.9pF 25volts C0G +/-0.5pF

***ineon SCT: Infineon's 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS

***ment14 APAC: IGBT,600V,15A,TO263; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Power Dissipation Max:130W

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ical: Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(2+Tab) D2PAK T/R

***icroelectronics: Trench gate field-stop IGBT M series, 650 V 30 A low loss

***nell: IGBT, SINGLE, 650V, 60A, TO-263-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

***ical: Trans IGBT Chip N-CH 650V 21A 3-Pin(2+Tab) D2PAK Tube

***ark: Igbt, Single, 650V, 21A, To-263Ab-3

***nell: IGBT, SINGLE, 650V, 21A, TO-263AB-3; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-263AB; No. of

***ical: Trans IGBT Chip N-CH 600V 28A 167000mW 3-Pin(2+Tab) D2PAK Tube

***(Formerly Allied Electronics): IGBT, N-Channel, 600V, 9A, D2PAK | Infineon IRGS8B60KTRLPBF

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:28A; Collector Emitter Saturation Voltage, Vce(sat):2.2V; Power Dissipation, Pd:167W; Package/Case:D2PAK ;RoHS Compliant: Yes

***nell: IGBT, D2-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current, Ic Continuous a Max:28A; Voltage, Vce Sat Max:2.2V; Power Dissipation:167W; Case Style:D2-PAK; Termination Type:SMD; Current, Icm Pulsed:56A; Marking, SMD:GS8B60K; Power, Pd:167W; Time, Fall:42ns; Time, Fall Max:42ns; Time, Rise:21ns; Voltage, Vceo:600V

***ure Electronics: H Series 600 V 7 A Surface Mount Trench Gate Field-Stop IGBT - D2PAK

***ow.cn: Trans IGBT Chip N-CH 600V 14A 88000mW 3-Pin(2+Tab) D2PAK T/R

***icroelectronics SCT: Short-circuit rugged IGBT, D2PAK, Tape and Reel

***r Electronics: Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB

***ical: Trans IGBT Chip N-CH 600V 10A 88000mW 3-Pin(2+Tab) D2PAK T/R

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 5 A high speed

***icroelectronics SCT: Short-circuit rugged IGBT, D2PAK, Tape and Reel

***r Electronics: Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB

***et: N-channel STripFET > 30 V to 350 V

STGB15M65DF2 Mehr Informationen

STM 650V M Series Trench Gate Field-Stop IGBTs: STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. The 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. They have an optimized design and are available in a tailored built-in anti-parallel diode.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
STGB15M65DF2 DISTI # V79:2366_22741372	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT	472	10000:$0.9065 5000:$0.9279 2000:$0.9612 1000:$1.0416 500:$1.2376 100:$1.4530 10:$1.8167 1:$2.3427
STGB15M65DF2 DISTI # V72:2272_17630167	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT	452	250:$1.3959 100:$1.4540 25:$1.6242 10:$1.8182 1:$2.3450
STGB15M65DF2 DISTI # V36:1790_16116214	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT	0	1000000:$0.8527 500000:$0.8543 100000:$0.9482 10000:$1.0920 1000:$1.1140
STGB15M65DF2 DISTI # 497-16507-1-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT M SE RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1945In Stock	500:$1.3854 100:$1.6862 10:$2.0980 1:$2.3400
STGB15M65DF2 DISTI # 497-16507-6-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT M SE RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1945In Stock	500:$1.3854 100:$1.6862 10:$2.0980 1:$2.3400
STGB15M65DF2 DISTI # 497-16507-2-ND	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT M SE RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	10000:$0.9736 5000:$0.9992 2000:$1.0376 1000:$1.1145
STGB15M65DF2 DISTI # 31081666	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT	472	7:$2.3427
STGB15M65DF2 DISTI # 25926821	STMicroelectronics	TRENCH GATE FIELD-STOP IGBT	452	7:$2.3450
STGB15M65DF2 DISTI # STGB15M65DF2	STMicroelectronics	600-650V IGBTs (Alt: STGB15M65DF2) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€0.9829 6000:€1.0569 4000:€1.0799 2000:€1.4309 1000:€2.2649
STGB15M65DF2 DISTI # STGB15M65DF2	STMicroelectronics	600-650V IGBTs - Tape and Reel (Alt: STGB15M65DF2) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.9037 15000:$0.9266 9000:$0.9506 6000:$0.9760 3000:$1.0027
STGB15M65DF2 DISTI # 84Y8599	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$0.9150
STGB15M65DF2. DISTI # 23AC9921	STMicroelectronics	PTD HIGH VOLTAGE	0	1:$0.9150
STGB15M65DF2 DISTI # 511-STGB15M65DF2	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss RoHS: Compliant	590	1:$2.1500 10:$1.8300 100:$1.4600 500:$1.2800 1000:$1.0600 2000:$0.9890 5000:$0.9520
STGB15M65DF2 DISTI # IGBT2105	STMicroelectronics	IGBT M Series 650V15A D2Pak RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$1.2700 2000:$1.1900 3000:$1.1600 4000:$1.0697

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	Mfr.#: IGB15N65S5ATMA1 OMO.#: OMO-IGB15N65S5ATMA1-INFINEON-TECHNOLOGIES	IGBT PRODUCTS
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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1984
Menge eingeben:

Der aktuelle Preis von STGB15M65DF2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,15 $~~; ~~2,15 $~~

10: ~~1,83 $~~; ~~18,30 $~~

100: ~~1,46 $~~; ~~146,00 $~~

500: ~~1,28 $~~; ~~640,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

STGB15 3
STGB1 52
STGB 130
STG 909

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STGB15M65DF2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes