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IXFN110N85X

IXFN110N85X
Mfr. #:
IXFN110N85X
Hersteller:
Littelfuse
Beschreibung:
MOSFET 850V X-Class HiPerFE Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN110N85X Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN110N85X DatasheetIXFN110N85X Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFN110N85X Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Chassishalterung
Paket / Koffer:
SOT-227-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
850 V
Id - Kontinuierlicher Drainstrom:
110 A
Rds On - Drain-Source-Widerstand:
33 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
425 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.17 kW
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
HiPerFET
Transistortyp:
1 N-Channel
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
43 S
Abfallzeit:
11 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
144 ns
Typische Einschaltverzögerungszeit:
50 ns
Gewichtseinheit:
1.058219 oz
Tags
IXFN1, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
N-Channel MOSFET, 110 A, 850 V, 4-Pin SOT227 IXYS IXFN110N85X
***ical
Trans MOSFET N-CH 850V 110A 4-Pin SOT-227B
***i-Key
MOSFET N-CH 850V 110A SOT227B
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Teil # Mfg. Beschreibung Aktie Preis
IXFN110N85X
DISTI # 30721048		IXYS CorporationTrans MOSFET N-CH 850V 110A 4-Pin SOT-227B6
  • 200:$34.9371
  • 100:$37.4319
  • 50:$38.7486
  • 25:$39.9366
  • 10:$43.1838
  • 5:$44.5500
  • 1:$46.1637
IXFN110N85X
DISTI # IXFN110N85X-ND		IXYS CorporationMOSFET N-CH 850V 110A SOT227B
RoHS: Compliant
Min Qty: 1
Container: Tube		10In Stock
  • 100:$37.8150
  • 30:$40.3360
  • 10:$43.6130
  • 1:$46.6400
IXFN110N85X
DISTI # V36:1790_19817343		IXYS CorporationTrans MOSFET N-CH 850V 110A 4-Pin SOT-227B0
    IXFN110N85X
    DISTI # 747-IXFN110N85X    		IXYS CorporationMOSFET 850V X-Class HiPerFE Power MOSFET
    RoHS: Compliant    		0
    • 1:$46.6300
    • 5:$45.0000
    • 10:$43.6200
    • 25:$40.3400
    • 50:$39.1400
    • 100:$37.8100
    • 200:$35.2900
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von IXFN110N85X dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    46,63 $
    46,63 $
    5
    45,00 $
    225,00 $
    10
    43,62 $
    436,20 $
    25
    40,34 $
    1 008,50 $
    50
    39,14 $
    1 957,00 $
    100
    37,81 $
    3 781,00 $
    200
    35,29 $
    7 058,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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