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GA10SICP12-263

GA10SICP12-263
Mfr. #:
GA10SICP12-263
Hersteller:
GeneSiC Semiconductor
Beschreibung:
TRANS SJT 1200V 25A TO263-7
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
GA10SICP12-263 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
GA10SICP12-263 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
GeneSiC Halbleiter
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Gewichtseinheit
0.056438 oz
Montageart
SMD/SMT
Paket-Koffer
TO-263-7
Technologie
SiC
Anzahl der Kanäle
1 Channel
Aufbau
Single
Pd-Verlustleistung
170 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
25 A
Vds-Drain-Source-Breakdown-Voltage
1.2 kV
Rds-On-Drain-Source-Widerstand
100 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
55 nC
Kanal-Modus
Erweiterung
Tags
GA10S, GA10, GA1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***eSiC Semiconductor
SiC Junction Transistor 1200V 100mΩ TO-263-7
***i-Key
TRANS SJT 1200V 25A D2PAK
***ark
T &R / Sic C P
Silicon Carbide Junction Transistors/Schottky Diode Co-Packs
GeneSiC Silicon Carbide Junction Transistors/Schottky Diode Co-Packs are a hybrid silicon IGBT with a silicon carbide (SiC) rectifier in a module. GeneSiC uses the latest generation of low-loss IGBTs and pairs them with their silicon carbide diodes. Replacing the traditional silicon freewheeling diode (FWD) with silicon carbide schottky rectifiers offers revolutionary switching performance. These improvements will usher in a new era in power conversion applications. These devices are offered in TO-263-7L or SOT-227 packages.Learn More
Teil # Mfg. Beschreibung Aktie Preis
GA10SICP12-263
DISTI # 1242-1318-ND		GeneSic Semiconductor IncTRANS SJT 1200V 25A TO263-7
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$28.8945
GA10SICP12-263
DISTI # 905-GA10SICP12-263		GeneSic Semiconductor IncMOSFET 1200V 25A Std SIC CoPak
RoHS: Compliant		58
  • 1:$39.1000
  • 5:$37.1700
  • 10:$36.1800
  • 25:$35.1700
  • 50:$33.2400
  • 100:$30.8900
  • 250:$28.3500
Bild Teil # Beschreibung
GA10SICP12-263

Mfr.#: GA10SICP12-263

OMO.#: OMO-GA10SICP12-263

 MOSFET 1200V 25A Std SIC CoPak
GA10SICP12-247

Mfr.#: GA10SICP12-247

OMO.#: OMO-GA10SICP12-247

 MOSFET 1200V 25A SIC CoPak
GA10SICP12-263

Mfr.#: GA10SICP12-263

OMO.#: OMO-GA10SICP12-263-GENESIC-SEMICONDUCTOR

 TRANS SJT 1200V 25A TO263-7
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von GA10SICP12-263 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
42,52 $
42,52 $
10
40,40 $
403,99 $
100
38,27 $
3 827,25 $
500
36,15 $
18 073,15 $
1000
34,02 $
34 020,00 $
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