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APT7M120S

APT7M120S
Mfr. #:
APT7M120S
Hersteller:
Microchip / Microsemi
Beschreibung:
MOSFET FG, MOSFET, 1200V, TO-268
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
APT7M120S Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT7M120S DatasheetAPT7M120S Datasheet (P4)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
D3PAK-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1.2 kV
Id - Kontinuierlicher Drainstrom:
8 A
Rds On - Drain-Source-Widerstand:
1.5 Ohms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
80 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
335 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Transistortyp:
1 N-Channel
Marke:
Mikrochip / Mikrosemi
Vorwärtstranskonduktanz - Min:
8 S
Abfallzeit:
13 ns
Produktart:
MOSFET
Anstiegszeit:
8 ns
Werkspackungsmenge:
1
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
45 ns
Typische Einschaltverzögerungszeit:
14 ns
Gewichtseinheit:
1.340411 oz
Tags
APT7, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    A***N
    A***N
    RU

    Good bridges work! Fast shipping!

    2019-01-11
    M***v
    M***v
    RU

    Came in safe and sound, thanks to the seller

    2019-05-08
    V***i
    V***i
    UA

    Delivery-22 days. i recommend the seller.

    2019-02-15
    I***v
    I***v
    RU

    Leds quality work well, product quality will show time.

    2019-05-31
***ical
Trans MOSFET N-CH Si 1.2KV 8A 3-Pin(2+Tab) D3PAK Tube
***et
Power MOS 8 MOSFET N-Channel 1200V 8A 3-Pin TO-268
*** Stop Electro
Power Field-Effect Transistor, 7A I(D), 1200V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***emi
N-Channel Power MOSFET, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK
*** Stop Electro
Power Field-Effect Transistor, 6.3A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
***et
Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R
***ser
MOSFETs 600V N-Channel QFET
***el Nordic
Contact for details
***ark
MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain
***nell
MOSFET, P-CH, 60V, 8.8A, TO-263; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.8A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.221ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:42W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger
***icroelectronics
N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package
***ponent Sense
power mosfet 950V 30V-TRANSISTOR FET N-C
***ical
Trans MOSFET N-CH 950V 6A 3-Pin(2+Tab) H2PAK T/R
***enic
950V 6A 110W 1.25´Î@10V3A 5V@100Ã×A N Channel H2PAK-2 MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 6A I(D), 950V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***nell
MOSFET, N-CH, 950V, 6A, 150DEG C, 110W; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 950V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 110W; Transistor Case Style: H2PAK-2; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***icroelectronics
N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 800 V 4.5 A 1. 6 mOhm Surface Mount SuperMESH™ K5 Mosfet - D2Pak
*** Electronic Components
MOSFET N-channel 950 V, 0.65 Ohm typ., 8 A MDmesh K5 Power MOSFET in D2PAK package
***ure Electronics
N-Channel 950 V 0.8 Ohm Surface Mount Power MOSFET - D2PAK-3
***r Electronics
Power Field-Effect Transistor, 8A I(D), 950V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Teil # Mfg. Beschreibung Aktie Preis
APT7M120S
DISTI # APT7M120S-ND		Microsemi CorporationMOSFET N-CH 1200V 8A D3PAK
RoHS: Compliant
Min Qty: 79
Container: Bulk		Temporarily Out of Stock
  • 79:$6.6911
APT7M120S
DISTI # APT7M120S		Microchip Technology IncPower MOS 8 MOSFET N-Channel 1200V 8A 3-Pin TO-268 - Rail/Tube (Alt: APT7M120S)
RoHS: Compliant
Min Qty: 79
Container: Tube		Americas - 0
  • 790:$3.9900
  • 395:$4.0900
  • 237:$4.1900
  • 158:$4.2900
  • 79:$4.4900
APT7M120S
DISTI # 494-APT7M120S		Microchip Technology IncMOSFET Power MOSFET - MOS8
RoHS: Compliant		75
  • 1:$9.2500
  • 5:$8.8900
  • 10:$8.5600
  • 25:$7.8600
  • 50:$7.5800
  • 100:$7.3100
  • 250:$6.7100
  • 500:$6.4700
  • 1000:$6.2400
Bild Teil # Beschreibung
HVM12

Mfr.#: HVM12

OMO.#: OMO-HVM12

 Rectifiers HVM 350mA 12000v
HVM12

Mfr.#: HVM12

OMO.#: OMO-HVM12-111

 Rectifiers HVM 350mA 12000v
NLV32T-330J-EF

Mfr.#: NLV32T-330J-EF

OMO.#: OMO-NLV32T-330J-EF-TDK

 Fixed Inductors 33uH 5.6ohms 70mA Wound Ferrite
Verfügbarkeit
Aktie:
75
Auf Bestellung:
2058
Menge eingeben:
Der aktuelle Preis von APT7M120S dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
9,25 $
9,25 $
5
8,89 $
44,45 $
10
8,56 $
85,60 $
25
7,86 $
196,50 $
50
7,58 $
379,00 $
100
7,31 $
731,00 $
250
6,71 $
1 677,50 $
500
6,47 $
3 235,00 $
1000
6,24 $
6 240,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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