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IRF6609TR1

IRF6609TR1
Mfr. #:
IRF6609TR1
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 20V N-CH 2.0 mOhm HEXFET 46nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6609TR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6609TR1 DatasheetIRF6609TR1 Datasheet (P4-P6)IRF6609TR1 Datasheet (P7-P9)IRF6609TR1 Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
N
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DirectFET-MT
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
31 A
Rds On - Drain-Source-Widerstand:
2.6 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
46 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
89 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
0.7 mm
Länge:
6.35 mm
Transistortyp:
1 N-Channel
Typ:
HEXFET Leistungs-MOSFET
Breite:
5.05 mm
Marke:
Infineon / IR
Abfallzeit:
9.8 ns
Feuchtigkeitsempfindlich:
ja
Produktart:
MOSFET
Anstiegszeit:
95 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
26 ns
Typische Einschaltverzögerungszeit:
24 ns
Teil # Aliase:
SP001529252
Gewichtseinheit:
0.035274 oz
Tags
IRF6609TR1, IRF6609T, IRF6609, IRF660, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power; N-Channel; 1.6 Miliohms (Typ.); 20 V (Min.); 250 A (Max.)
***ark
MOSFET, N, DIRECTFET, MT; Transistor type:MOSFET; Voltage, Vds typ:20V; Current, Id cont:150A; Resistance, Rds on:2mohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:2.45V; Case style:MT; Capacitance, Ciss typ:6290pF; RoHS Compliant: Yes
***ernational Rectifier
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
***ment14 APAC
MOSFET, N, DIRECTFET, MT; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:20V; On Resistance Rds(on):2mohm; Threshold Voltage Vgs Typ:2.45V; Power Dissipation Pd:2.8W; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:6290pF; Charge Qrr @ Tj = 25°C Typ:26nC; Current Temperature:25°C; External Depth:6.35mm; External Length / Height:0.7mm; External Width:5.05mm; Full Power Rating Temperature:25°C; IC Package (Case style):MT; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; No. of Transistors:1; On State Resistance Max:2mohm; Package / Case:MT; Power Dissipation Pd:2.8W; Power Dissipation Pd:2.8W; Pulse Current Idm:250A; Reverse Recovery Time trr Typ:32ns; SMD Marking:6609; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.45V; Voltage Vgs th Min:1.55V
Teil # Mfg. Beschreibung Aktie Preis
IRF6609TR1
DISTI # IRF6609TR1-ND		Infineon Technologies AGMOSFET N-CH 20V 31A DIRECTFET
RoHS: Not compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6609TR1PBF
    DISTI # IRF6609TR1PBFTR-ND    		Infineon Technologies AGMOSFET N-CH 20V 31A DIRECTFET
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Limited Supply - Call
      IRF6609TR1PBF
      DISTI # IRF6609TR1PBFCT-ND      		Infineon Technologies AGMOSFET N-CH 20V 31A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		Limited Supply - Call
        IRF6609TR1PBF
        DISTI # IRF6609TR1PBFDKR-ND        		Infineon Technologies AGMOSFET N-CH 20V 31A DIRECTFET
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Limited Supply - Call
          IRF6609TR1PBF
          DISTI # 70018820          		Infineon Technologies AG20V N-CHANNEL HEXFET POWER MOSFET
          RoHS: Compliant          		0
          • 1000:$2.4300
          • 2000:$2.2300
          IRF6609TR1
          DISTI # 942-IRF6609TR1          		Infineon Technologies AGMOSFET 20V N-CH 2.0 mOhm HEXFET 46nC
          RoHS: Not compliant          		0
            IRF6609TR1PBF
            DISTI # 942-IRF6609TR1PBF            		Infineon Technologies AGMOSFET 20V N-CH HEXFET 2mOhms 46nC
            RoHS: Compliant            		0
              IRF6609TR1
              DISTI # 9266569              		Infineon Technologies AGMOSFET, N, DIRECTFET, MT
              RoHS: Compliant              		0
              • 1:$4.6600
              IRF6609TR1PBF
              DISTI # 1436905              		Infineon Technologies AG 
              RoHS: Compliant              		0
              • 1:$4.6500
              • 10:$4.3600
              • 25:$3.9500
              • 50:$3.8100
              • 100:$3.6100
              • 250:$3.6100
              • 500:$3.4900
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              Verfügbarkeit
              Aktie:
              Available
              Auf Bestellung:
              5500
              Menge eingeben:
              Der aktuelle Preis von IRF6609TR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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