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MT3S20TU(TE85L)

MT3S20TU(TE85L)
Mfr. #:
MT3S20TU(TE85L)
Hersteller:
Toshiba
Beschreibung:
RF Bipolar Transistors Radio-Freq VHF/UHF 80mA 900mW 12V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
MT3S20TU(TE85L) Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
MT3S20TU(TE85L) DatasheetMT3S20TU(TE85L) Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
HF-Bipolartransistoren
RoHS:
Y
Serie:
MT3S20
Transistortyp:
Bipolar
Technologie:
Si
Polarität des Transistors:
NPN
Kollektor- Emitterspannung VCEO Max:
12 V
Emitter- Basisspannung VEBO:
1.5 V
Kontinuierlicher Kollektorstrom:
80 mA
Aufbau:
Single
Montageart:
SMD/SMT
Paket / Koffer:
UFM-3
Verpackung:
Spule
Typ:
VHF UHF rauscharmer, verzerrungsarmer Verstärker
Marke:
Toshiba
Pd - Verlustleistung:
900 mW
Produktart:
HF-Bipolartransistoren
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000233 oz
Tags
MT3S20TU(T, MT3S20T, MT3S20, MT3S2, MT3S, MT3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E***a
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    2019-05-07
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    LV

    good

    2019-04-17
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Trans GP BJT NPN 12V 0.08A 3-Pin UFM Embossed T/R
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RF Bipolar Transistors Radio-Freq VHF/UHF 80mA 900mW 12V
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RF TRANS NPN 12V 7GHZ UFM
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RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
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new, original packaged
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Bipolar (BJT) Transistor NPN 12V 2A 360MHz 200mW Surface Mount SMT3
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Small Signal Bipolar Transistor, 1.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
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ROHM 2SD2653KT146 NPN Bipolar Transistor, 2 A, 12 V, 3-Pin SC-59 | ROHM Semiconductor 2SD2653KT146
***et
Trans GP BJT NPN 12V 2A 3-Pin SMT T/R
***ark
Transistor,npn,12V,2A,sot-346; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:12V; Dc Collector Current:2A; Power Dissipation Pd:200Mw; Transistor Mounting:surface Mount; No. Of Pins:3Pins; Transition Frequency Ft:360Mhzrohs Compliant: Yes
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ROHM 2SD2701TL NPN Bipolar Transistor, 1.5 A, 30 V, 3-Pin TUMT | ROHM Semiconductor 2SD2701TL
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Trans GP BJT NPN 12V 1.5A 800mW 3-Pin TUMT T/R
***nell
TRANSISTOR, NPN, 30V, 1.5A, SOT-323T; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 400mW; DC Collector Current: 1.5A; DC Current Gain hFE: 270hFE; Transistor Case Style: SOT-323T; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ical
Trans GP BJT NPN 12V 1.5A 800mW 3-Pin TUMT T/R
***nell
TRANS, NPN, 12V, 1.5A, 150DEG C, 0.4W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: -; Power Dissipation Pd: 400mW; DC Collector Current: 1.5A; DC Current Gain hFE: 270hFE; Transistor Case Style: SOT-323; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***i-Key
TRANS NPN 12V 1.5A TUMT3
***i-Key
TRANS 2NPN 15V 0.8A 6SCH
***nell
TRANSISTOR, NPNNPN, 15V, 0.8A, SCH6; Module Configuration:Dual; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:15V; Typ Gain Bandwidth ft:440MHz; Power Dissipation Pd:400mW; DC Collector Current:800mA; DC Current Gain hFE:800; Transistor Case Style:SCH; No. of Pins:6
Teil # Mfg. Beschreibung Aktie Preis
MT3S20TU(TE85L)
DISTI # MT3S20TU(TE85L)CT-ND		Toshiba America Electronic ComponentsRF TRANS NPN 12V 7GHZ UFM
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2In Stock
  • 1:$0.5900
MT3S20TU(TE85L)
DISTI # MT3S20TU(TE85L)DKR-ND		Toshiba America Electronic ComponentsRF TRANS NPN 12V 7GHZ UFM
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Limited Supply - Call
    MT3S20TU(TE85L)
    DISTI # MT3S20TU(TE85L)TR-ND    		Toshiba America Electronic ComponentsRF TRANS NPN 12V 7GHZ UFM
    RoHS: Compliant
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
      MT3S20TU(TE85L)
      DISTI # MT3S20TU(TE85L)      		Toshiba America Electronic ComponentsTrans GP BJT NPN 12V 0.08A 3-Pin UFM Embossed T/R (Alt: MT3S20TU(TE85L))
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Asia - 0
        MT3S20TU(TE85L)
        DISTI # 757-MT3S20TUTE85L        		Toshiba America Electronic ComponentsRF Bipolar Transistors Radio-Freq VHF/UHF 80mA 900mW 12V
        RoHS: Compliant        		5950
        • 1:$0.4600
        • 10:$0.3020
        • 100:$0.1680
        • 1000:$0.1230
        • 3000:$0.1060
        • 9000:$0.0990
        • 24000:$0.0910
        • 45000:$0.0880
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        Verfügbarkeit
        Aktie:
        813
        Auf Bestellung:
        2796
        Menge eingeben:
        Der aktuelle Preis von MT3S20TU(TE85L) dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,46 $
        0,46 $
        10
        0,32 $
        3,23 $
        100
        0,25 $
        24,80 $
        500
        0,22 $
        109,50 $
        1000
        0,17 $
        173,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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