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HGTP3N60A4D

HGTP3N60A4D
Mfr. #:
HGTP3N60A4D
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 600V 17A 70W TO220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
HGTP3N60A4D Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HGTP3N60A4D DatasheetHGTP3N60A4D Datasheet (P4-P6)HGTP3N60A4D Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
HGTP3N60A, HGTP3N, HGTP3, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 17A 3-Pin (3+Tab) TO-220AB Rail
***nell
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:17A; Voltage, Vce Sat Max:2.7V; Power Dissipation:70W; Case Style:TO-220AB; Termination Type:Through Hole; Alternate Case Style:TO-263; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:40A; No. of Pins:3; Power, Pd:70W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:47ns; Time, Fall Typ:47ns; Time, Rise:11ns; Transistors, No. of:1
***rchild Semiconductor
The HGTP3N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Teil # Mfg. Beschreibung Aktie Preis
HGTP3N60A4D
DISTI # V36:1790_06359439		ON SemiconductorPWR IGBT 7A,600V,SMPS SERIES N0
    HGTP3N60A4D
    DISTI # HGTP3N60A4D-ND    		ON SemiconductorIGBT 600V 17A 70W TO220AB
    RoHS: Compliant
    Min Qty: 800
    Container: Tube    		Limited Supply - Call
    • 800:$1.4088
    HGTP3N60A4D
    DISTI # HGTP3N60A4D    		ON SemiconductorTrans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: HGTP3N60A4D)
    RoHS: Not Compliant
    Min Qty: 272
    Container: Bulk    		Americas - 0
    • 544:$1.0900
    • 816:$1.0900
    • 1360:$1.0900
    • 2720:$1.0900
    • 272:$1.1900
    HGTP3N60A4D
    DISTI # HGTP3N60A4D    		ON SemiconductorTrans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP3N60A4D)
    RoHS: Compliant
    Min Qty: 400
    Container: Tube    		Americas - 0
      HGTP3N60A4D
      DISTI # 512-HGTP3N60A4D      		ON SemiconductorIGBT Transistors 600V N-Channel IGBT SMPS Series
      RoHS: Compliant      		0
        HGTP3N60A4DFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        RoHS: Compliant        		31194
        • 1000:$1.2100
        • 500:$1.2700
        • 100:$1.3300
        • 25:$1.3800
        • 1:$1.4900
        HGTP3N60A4DFairchild Semiconductor Corporation17 A, 600 V, N-CHANNEL IGBT, TO-220AB432
        • 346:$2.5831
        • 81:$2.8962
        • 1:$4.6965
        Bild Teil # Beschreibung
        HGTP30N60C3D

        Mfr.#: HGTP30N60C3D

        OMO.#: OMO-HGTP30N60C3D-1190

        		 Neu und Original
        HGTP3N60A4

        Mfr.#: HGTP3N60A4

        OMO.#: OMO-HGTP3N60A4-ON-SEMICONDUCTOR

        		 IGBT 600V 17A 70W TO220AB
        HGTP3N60A4 3N60A4

        Mfr.#: HGTP3N60A4 3N60A4

        OMO.#: OMO-HGTP3N60A4-3N60A4-1190

        		 Neu und Original
        HGTP3N60A4-NL

        Mfr.#: HGTP3N60A4-NL

        OMO.#: OMO-HGTP3N60A4-NL-1190

        		 Neu und Original
        HGTP3N60A4D

        Mfr.#: HGTP3N60A4D

        OMO.#: OMO-HGTP3N60A4D-ON-SEMICONDUCTOR

        		 IGBT 600V 17A 70W TO220AB
        HGTP3N60A4D9A

        Mfr.#: HGTP3N60A4D9A

        OMO.#: OMO-HGTP3N60A4D9A-1190

        		 Neu und Original
        HGTP3N60B3

        Mfr.#: HGTP3N60B3

        OMO.#: OMO-HGTP3N60B3-1190

        		 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        HGTP3N60B3D

        Mfr.#: HGTP3N60B3D

        OMO.#: OMO-HGTP3N60B3D-1190

        		 Neu und Original
        HGTP3N60C3

        Mfr.#: HGTP3N60C3

        OMO.#: OMO-HGTP3N60C3-1190

        		 Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-220AB
        HGTP3N60C3D-07

        Mfr.#: HGTP3N60C3D-07

        OMO.#: OMO-HGTP3N60C3D-07-1190

        		 Neu und Original
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4000
        Menge eingeben:
        Der aktuelle Preis von HGTP3N60A4D dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,64 $
        1,64 $
        10
        1,55 $
        15,53 $
        100
        1,47 $
        147,15 $
        500
        1,39 $
        694,90 $
        1000
        1,31 $
        1 308,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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