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STGW60H65DFB

STGW60H65DFB
Mfr. #:
STGW60H65DFB
Hersteller:
STMicroelectronics
Beschreibung:
IGBT 650V 80A 375W TO-247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGW60H65DFB Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGW60H65DFB Mehr Informationen STGW60H65DFB Product Details
Produkteigenschaft
Attributwert
Hersteller
STMicroelectronics
Produktkategorie
IGBTs - Single
Serie
600-650V IGBTs
Verpackung
Rohr
Gewichtseinheit
1.340411 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247
Aufbau
Single
Leistung max
375W
Reverse-Recovery-Time-trr
60ns
Strom-Kollektor-Ic-Max
80A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
Grabenfeldstopp
Strom-Kollektor-gepulster-Icm
240A
Vce-on-Max-Vge-Ic
2V @ 15V, 60A
Schaltenergie
1.09mJ (on), 626μJ (off)
Gate-Gebühr
306nC
Td-ein-aus-25°C
51ns/160ns
Testbedingung
400V, 60A, 5 Ohm, 15V
Pd-Verlustleistung
375 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
1.6 V
Kontinuierlicher Kollektorstrom-bei-25-C
80 A
Gate-Emitter-Leckstrom
250 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
60 A
Tags
STGW60H65DF, STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
STGW Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-3
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-247 Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube
***ied Electronics & Automation
IGBT N-Ch 650V 60A High-Speed TO247
***ronik
IGBT 650V 80A 1,75V TO247-3
***i-Key
IGBT 650V 80A 375W TO-247
***ark
Igbt, Single, 650V, 80A, To-247-3; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:375W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:HB Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015)
***nell
IGBT, SINGOLO, 650V, 80A, TO-247-3; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:375W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:HB Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Teil # Mfg. Beschreibung Aktie Preis
STGW60H65DFB
DISTI # 497-14367-ND		STMicroelectronicsIGBT 650V 80A 375W TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1020:$2.7783
  • 510:$3.2943
  • 120:$3.8697
  • 30:$4.4650
  • 1:$5.2600
STGW60H65DFB-4
DISTI # STGW60H65DFB-4-ND		STMicroelectronicsIGBT
RoHS: Not compliant
Min Qty: 600
Container: Tube		Temporarily Out of Stock
  • 600:$5.6963
STGW60H65DFB
DISTI # STGW60H65DFB		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube (Alt: STGW60H65DFB)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€3.0400
  • 10:€2.8000
  • 100:€2.6800
  • 250:€2.5700
  • 500:€2.4600
  • 1000:€2.0600
STGW60H65DFB
DISTI # STGW60H65DFB		STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW60H65DFB)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$2.7900
  • 1200:$2.6900
  • 2400:$2.4900
  • 3600:$2.3900
  • 6000:$2.3900
STGW60H65DFB-4
DISTI # STGW60H65DFB-4		STMicroelectronicsPTD HIGH VOLTAGE - Trays (Alt: STGW60H65DFB-4)
RoHS: Compliant
Min Qty: 600
Container: Tray		Americas - 0
  • 600:$5.1900
  • 1200:$4.9900
  • 2400:$4.6900
  • 3600:$4.4900
  • 6000:$4.3900
STGW60H65DFB
DISTI # 511-STGW60H65DFB		STMicroelectronicsIGBT Transistors 600V 60A trench gate field-stop IGBT
RoHS: Compliant		0
  • 1:$5.0000
  • 10:$4.2500
  • 100:$3.6800
  • 250:$3.4900
  • 500:$3.1300
  • 1000:$2.6400
  • 2500:$2.5100
STGW60H65DFB-4
DISTI # 511-STGW60H65DFB-4		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed0
  • 1:$8.3300
  • 10:$7.5300
  • 25:$7.1800
  • 100:$6.2300
  • 250:$5.9600
  • 500:$5.4300
  • 1000:$4.7300
STGW60H65DFB
DISTI # 2629740		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247-3
RoHS: Compliant		0
  • 500:£2.0500
  • 250:£2.2000
  • 100:£2.3800
  • 10:£2.6500
  • 1:£3.2000
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		100
  • 100:£3.5600
  • 50:£3.5700
  • 10:£3.5800
  • 5:£3.6300
  • 1:£3.7000
STGW60H65DFB-4
DISTI # 2778105		STMicroelectronicsIGBT, SINGLE, 650V, 80A, TO-247
RoHS: Compliant		100
  • 250:$8.0900
  • 100:$8.6800
  • 50:$9.7400
  • 10:$10.8500
  • 5:$12.2400
  • 1:$14.0400
STGW60H65DFB-4
DISTI # XSFP00000113820		STMicroelectronicsPower Field-Effect Transistor, 11A I(D),500V,0.38ohm, 1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET, TO-263AB
RoHS: Compliant		80 in Stock0 on Order
  • 80:$11.0000
  • 17:$12.1000
Bild Teil # Beschreibung
STGW60H65DFB

Mfr.#: STGW60H65DFB

OMO.#: OMO-STGW60H65DFB

 IGBT Transistors 600V 60A trench gate field-stop IGBT
STGW60H65FB

Mfr.#: STGW60H65FB

OMO.#: OMO-STGW60H65FB

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STGW60H65DRF

Mfr.#: STGW60H65DRF

OMO.#: OMO-STGW60H65DRF

 IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
STGW60H65DF

Mfr.#: STGW60H65DF

OMO.#: OMO-STGW60H65DF

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STGW60V60F

Mfr.#: STGW60V60F

OMO.#: OMO-STGW60V60F

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STGW60H65F

Mfr.#: STGW60H65F

OMO.#: OMO-STGW60H65F

 IGBT Transistors 60A 650V FST IGBT Very High Switching
STGW60V60F

Mfr.#: STGW60V60F

OMO.#: OMO-STGW60V60F-STMICROELECTRONICS

 IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT
STGW60H60DLFB

Mfr.#: STGW60H60DLFB

OMO.#: OMO-STGW60H60DLFB-STMICROELECTRONICS

 IGBT 600V 80A 375W TO-247
STGW60H65DF

Mfr.#: STGW60H65DF

OMO.#: OMO-STGW60H65DF-STMICROELECTRONICS

 IGBT 650V 120A 360W TO247
STGW60H65DFB-4

Mfr.#: STGW60H65DFB-4

OMO.#: OMO-STGW60H65DFB-4-STMICROELECTRONICS

 PTD HIGH VOLTAGE (Alt: STGW60H65DFB-4)
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1000
Menge eingeben:
Der aktuelle Preis von STGW60H65DFB dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,58 $
3,58 $
10
3,41 $
34,06 $
100
3,23 $
322,65 $
500
3,05 $
1 523,65 $
1000
2,87 $
2 868,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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