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FDMC6679AZ

FDMC6679AZ
Mfr. #:
FDMC6679AZ
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET -30V P-Channel Power Trench
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDMC6679AZ Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
Power-33-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
20 A
Rds On - Drain-Source-Widerstand:
10 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.8 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
37 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
41 W
Aufbau:
Single
Handelsname:
PowerTrench
Verpackung:
Spule
Höhe:
0.8 mm
Länge:
3.3 mm
Serie:
FDMC6679AZ
Transistortyp:
1 P-Channel
Breite:
3.3 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
46 S
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.005832 oz
Tags
FDMC667, FDMC66, FDMC6, FDMC, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***r
    M***r
    AT

    I order in same time with other cheaper shipping company. Arrived on same day!

    2019-03-16
    P***s
    P***s
    BE

    All OK

    2019-02-09
    A***v
    A***v
    RU

    The boards are good, everything is triggered by a short circuit, twists the interskol on the second transmission long self-tapping on hurray, also twists them. It took a long time, you need to collect goods for a large amount will send faster than 500 rubles

    2019-07-05
    I***h
    I***h
    RU

    Item not received

    2019-05-20
***itex
P-MOSFET transistor FDMC6679AZ Fairchild; -30V; -20A; 10mOhm; SMD MLP 3.3x3.3
***emi
P-Channel Power Trench® MOSFET -30V, -20A, 10mΩ
*** Source Electronics
Trans MOSFET P-CH Si 30V 11.5A 8-Pin WDFN EP T/R / MOSFET P-CH 30V POWER33
***rchild Semiconductor
The FDMC6679AZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
***nell
MOSFET, P CH, 30V, 20A, MLP 3.3X3.3; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0086ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:41W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:MLP; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***icroelectronics
N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package
***ark
Mosfet, N-Ch, 60V, 12A, To-252-3; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.06Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 12A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ical
Trans MOSFET N-CH 550V 2.4A 3-Pin(2+Tab) DPAK Tube
*** Electronics
COOLMOS N-CHANNEL POWER MOSFET
***va Crawler
N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in IPAK package
***r Electronics
Power Field-Effect Transistor, 1A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N CH, 600V, 1A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:1A; Package / Case:IPAK; Power Dissipation Pd:30W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in DPAK package
***ure Electronics
N-Channel 525 V 2.6 Ohm Surface Mount SuperMesh III Power MosFet - TO-252
***r Electronics
Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ical
Trans MOSFET N-CH 700V 5.4A 3-Pin(3+Tab) TO-251 Tube
***ark
Mosfet, N-Ch, 700V, 5.4A, To-251; Transistor Polarity:n Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:700V; On Resistance Rds(On):1.26Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers
***ineon SCT
Single N-Channel 650 V 1.5 Ohm 9.4 nC CoolMOS Power Mosfet - TO-251, PG-TO251-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ineon
Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
Teil # Mfg. Beschreibung Aktie Preis
FDMC6679AZ
DISTI # FDMC6679AZFSTR-ND		ON SemiconductorMOSFET P-CH 30V POWER33
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.3896
FDMC6679AZ
DISTI # FDMC6679AZFSCT-ND		ON SemiconductorMOSFET P-CH 30V POWER33
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.4300
  • 500:$0.5446
  • 100:$0.7023
  • 10:$0.8890
  • 1:$1.0000
FDMC6679AZ
DISTI # FDMC6679AZFSDKR-ND		ON SemiconductorMOSFET P-CH 30V POWER33
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.4300
  • 500:$0.5446
  • 100:$0.7023
  • 10:$0.8890
  • 1:$1.0000
FDMC6679AZ
DISTI # FDMC6679AZ		ON SemiconductorTrans MOSFET P-CH 30V 11.5A 8-Pin MLP EP T/R (Alt: FDMC6679AZ)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.4879
  • 6000:€0.3999
  • 12000:€0.3659
  • 18000:€0.3379
  • 30000:€0.3139
FDMC6679AZ
DISTI # FDMC6679AZ		ON SemiconductorTrans MOSFET P-CH 30V 11.5A 8-Pin MLP EP T/R - Tape and Reel (Alt: FDMC6679AZ)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.3299
  • 6000:$0.3279
  • 12000:$0.3239
  • 18000:$0.3199
  • 30000:$0.3119
FDMC6679AZ
DISTI # FDMC6679AZ		ON SemiconductorTrans MOSFET P-CH 30V 11.5A 8-Pin MLP EP T/R (Alt: FDMC6679AZ)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    FDMC6679AZ
    DISTI # 88T3264    		ON SemiconductorMOSFET, P CHANNEL, 30V, 20A, MLP 3.3X3.3,Transistor Polarity:P Channel,Continuous Drain Current Id:-20A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0086ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.8V RoHS Compliant: Yes0
    • 1:$0.8400
    • 10:$0.7090
    • 25:$0.6540
    • 50:$0.5990
    • 100:$0.5440
    • 250:$0.5130
    • 500:$0.4810
    • 1000:$0.3800
    FDMC6679AZ
    DISTI # 64R3011    		ON SemiconductorST3 PCH WITH ZENER / REEL0
    • 1:$0.3560
    • 9000:$0.3430
    • 24000:$0.3330
    FDMC6679AZ
    DISTI # 512-FDMC6679AZ    		ON SemiconductorMOSFET -30V P-Channel Power Trench
    RoHS: Compliant    		396
    • 1:$0.8400
    • 10:$0.7090
    • 100:$0.5440
    • 500:$0.4810
    • 1000:$0.3800
    • 3000:$0.3370
    • 9000:$0.3240
    FDMC6679AZ
    DISTI # 7599522P    		ON SemiconductorMOSFET P-CHANNEL 30V 11.5A MLP8EP, RL5735
    • 50:£0.3840
    • 750:£0.2600
    • 1500:£0.2440
    • 3000:£0.2380
    FDMC6679AZFairchild Semiconductor Corporation 5950
      FDMC6679AZ
      DISTI # 2083251      		ON SemiconductorMOSFET, P CH, 30V, 20A, MLP 3.3X3.3
      RoHS: Compliant      		320
      • 5:£0.6150
      • 25:£0.5570
      • 100:£0.4190
      • 250:£0.3950
      • 500:£0.3710
      FDMC6679AZ
      DISTI # 2083251      		ON SemiconductorMOSFET, P CH, 30V, 20A, MLP 3.3X3.3
      RoHS: Compliant      		0
      • 1:$1.3400
      • 10:$1.1300
      • 100:$0.8610
      • 500:$0.7620
      • 1000:$0.6020
      • 3000:$0.5340
      • 9000:$0.5130
      Bild Teil # Beschreibung
      LMP8645MKE/NOPB

      Mfr.#: LMP8645MKE/NOPB

      OMO.#: OMO-LMP8645MKE-NOPB

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      Mfr.#: FDN339AN

      OMO.#: OMO-FDN339AN

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      SN74LVC1G08DRYR

      Mfr.#: SN74LVC1G08DRYR

      OMO.#: OMO-SN74LVC1G08DRYR

      		 Logic Gates SNGL 2 Input Pos AND Gate
      TS3A5223RSWR

      Mfr.#: TS3A5223RSWR

      OMO.#: OMO-TS3A5223RSWR

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      TPS54302DDCT

      Mfr.#: TPS54302DDCT

      OMO.#: OMO-TPS54302DDCT

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      RC0402FR-07100KL

      Mfr.#: RC0402FR-07100KL

      OMO.#: OMO-RC0402FR-07100KL

      		 Thick Film Resistors - SMD 100K OHM 1%
      RC0402FR-07100RL

      Mfr.#: RC0402FR-07100RL

      OMO.#: OMO-RC0402FR-07100RL

      		 Thick Film Resistors - SMD 100 OHM 1%
      2295018-2

      Mfr.#: 2295018-2

      OMO.#: OMO-2295018-2

      		 USB Connectors SPLASH PROOF USB TYPE C REC, DUAL SMT
      LMP8645MKE/NOPB

      Mfr.#: LMP8645MKE/NOPB

      OMO.#: OMO-LMP8645MKE-NOPB-TEXAS-INSTRUMENTS

      		 Current Sense Amplifiers Prec Hi Vtg Crnt Sense Amp
      SN74LVC1G08DRYR

      Mfr.#: SN74LVC1G08DRYR

      OMO.#: OMO-SN74LVC1G08DRYR-TEXAS-INSTRUMENTS

      		 Logic Gates SNGL 2 Input Pos AND Gate
      Verfügbarkeit
      Aktie:
      57
      Auf Bestellung:
      2040
      Menge eingeben:
      Der aktuelle Preis von FDMC6679AZ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,83 $
      0,83 $
      10
      0,71 $
      7,09 $
      100
      0,54 $
      54,40 $
      500
      0,48 $
      240,50 $
      1000
      0,38 $
      380,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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