IXFX80N50P

IXFX80N50P
Mfr. #:
IXFX80N50P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 500V 80A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFX80N50P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFX80N50P DatasheetIXFX80N50P Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFX80N50P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
65 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1040 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
21.34 mm
Länge:
16.13 mm
Serie:
IXFX80N50
Transistortyp:
1 N-Channel
Breite:
5.21 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
70 S
Abfallzeit:
16 ns
Produktart:
MOSFET
Anstiegszeit:
27 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
70 ns
Typische Einschaltverzögerungszeit:
25 ns
Gewichtseinheit:
0.257500 oz
Tags
IXFX80, IXFX8, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 500 V 65 mOhm Enhancement Mode Power MOSFET
***ical
Trans MOSFET N-CH 500V 80A 3-Pin(3+Tab) PLUS 247
***i-Key
MOSFET N-CH 500V 80A PLUS247-3
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFX80N50P
DISTI # 28993930
IXYS CorporationTrans MOSFET N-CH 500V 80A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant
1110
  • 30:$16.5733
IXFX80N50P
DISTI # IXFX80N50P-ND
IXYS CorporationMOSFET N-CH 500V 80A PLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$15.4457
IXFX80N50PIXYS CorporationN-Channel 500 V 65 mOhm Enhancement Mode Power MOSFET
RoHS: Compliant
1850Tube
  • 1:$21.7600
  • 5:$18.2300
  • 10:$16.8900
  • 25:$15.2700
  • 50:$14.1500
IXFX80N50P
DISTI # 747-IXFX80N50P
IXYS CorporationMOSFET 500V 80A
RoHS: Compliant
104
  • 1:$19.2000
  • 10:$17.4600
  • 25:$16.1400
  • 50:$14.8500
  • 100:$14.4900
  • 250:$13.2800
  • 500:$12.0500
IXFX80N50P
DISTI # XSFP00000002812
IXYS Corporation 
RoHS: Compliant
1245
  • 30:$29.0100
  • 1245:$27.2000
Bild Teil # Beschreibung
LMV358IDR

Mfr.#: LMV358IDR

OMO.#: OMO-LMV358IDR

Operational Amplifiers - Op Amps Dual Lw V R/R Op Amp
NJW21193G

Mfr.#: NJW21193G

OMO.#: OMO-NJW21193G

Bipolar Transistors - BJT 200W PNP
NJW21194G

Mfr.#: NJW21194G

OMO.#: OMO-NJW21194G

Bipolar Transistors - BJT 200W NPN
BAV70LT1G

Mfr.#: BAV70LT1G

OMO.#: OMO-BAV70LT1G

Diodes - General Purpose, Power, Switching 70V 200mA Dual Common Cathode
LS4148-GS18

Mfr.#: LS4148-GS18

OMO.#: OMO-LS4148-GS18

Diodes - General Purpose, Power, Switching 100V Io/150mA 2.0 Amp IFSM
LM4040C25IDBZR

Mfr.#: LM4040C25IDBZR

OMO.#: OMO-LM4040C25IDBZR

Voltage References 2.5-V Precision Mcrpwr Shunt .5% acc
MC79L15ACPRPG

Mfr.#: MC79L15ACPRPG

OMO.#: OMO-MC79L15ACPRPG

Linear Voltage Regulators 15V 100mA Negative
C3216X7R1E475K160AE

Mfr.#: C3216X7R1E475K160AE

OMO.#: OMO-C3216X7R1E475K160AE

Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 1206 25V 4.7uF X7R 10% T: 1.6mm
LS4148-GS18

Mfr.#: LS4148-GS18

OMO.#: OMO-LS4148-GS18-VISHAY

Diodes - General Purpose, Power, Switching 100V Io/150mA 2.0 Amp IFSM
NE8FBH

Mfr.#: NE8FBH

OMO.#: OMO-NE8FBH-402

Modular Connectors / Ethernet Connectors HORIZON PCB RECEPT NICKEL RING
Verfügbarkeit
Aktie:
104
Auf Bestellung:
2087
Menge eingeben:
Der aktuelle Preis von IXFX80N50P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
19,20 $
19,20 $
10
17,46 $
174,60 $
25
14,04 $
351,00 $
50
13,66 $
683,00 $
100
13,47 $
1 347,00 $
250
13,28 $
3 320,00 $
500
12,05 $
6 025,00 $
1000
11,01 $
11 010,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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