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TK25N60X,S1F

TK25N60X,S1F
Mfr. #:
TK25N60X,S1F
Hersteller:
Toshiba
Beschreibung:
MOSFET Power MOSFET N-Channel
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TK25N60X,S1F Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK25N60X,S1F DatasheetTK25N60X,S1F Datasheet (P4-P6)TK25N60X,S1F Datasheet (P7-P9)TK25N60X,S1F Datasheet (P10)
ECAD Model:
Mehr Informationen:
TK25N60X,S1F Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
25 A
Rds On - Drain-Source-Widerstand:
105 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
40 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
180 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
DTMOSIV
Verpackung:
Rohr
Höhe:
20.95 mm
Länge:
15.94 mm
Serie:
TK25N60X
Breite:
5.02 mm
Marke:
Toshiba
Abfallzeit:
4 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
90 ns
Typische Einschaltverzögerungszeit:
45 ns
Gewichtseinheit:
1.340411 oz
Tags
TK25N, TK25, TK2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
X35 Pb-F Power Mosfet Transistor To-247(Os) Pd=180W F=1Mhz Rohs Compliant: Yes
***ical
Trans MOSFET N-CH Si 600V 25A 3-Pin(3+Tab) TO-247 Tube
***
MOSFET POWER N-CHANNEL
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Teil # Mfg. Beschreibung Aktie Preis
TK25N60X,S1F(S
DISTI # 30603216		Toshiba America Electronic ComponentsTK25N60X,S1F(S271
  • 12:$2.1875
TK25N60X,S1F
DISTI # 25885816		Toshiba America Electronic ComponentsMOSFETs Silicon N-Channel MOS (DTMOS/-H)30
  • 3:$4.6617
TK25N60X,S1F
DISTI # TK25N60XS1F-ND		Toshiba America Electronic ComponentsMOSFET N-CH 600V 25A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		144In Stock
  • 2520:$2.0269
  • 510:$2.5298
  • 120:$3.1242
  • 30:$3.4290
  • 10:$3.8100
  • 1:$4.2700
TK25N60X,S1F
DISTI # V99:2348_13896158		Toshiba America Electronic ComponentsMOSFETs Silicon N-Channel MOS (DTMOS/-H)30
  • 2500:$2.0640
  • 1000:$2.1370
  • 500:$2.5240
  • 250:$2.8110
  • 100:$3.1170
  • 10:$3.4120
  • 1:$4.6617
TK25N60X,S1F
DISTI # V36:1790_13896158		Toshiba America Electronic ComponentsMOSFETs Silicon N-Channel MOS (DTMOS/-H)0
  • 30000:$1.8190
  • 15000:$1.8210
  • 3000:$1.9810
  • 300:$2.2460
  • 30:$2.2900
TK25N60X,S1F
DISTI # TK25N60X,S1F		Toshiba America Electronic ComponentsTrans MOSFET N-CH 600V 25A 3-Pin TO-247 - Rail/Tube (Alt: TK25N60X,S1F)
RoHS: Compliant
Min Qty: 30
Container: Tube		Americas - 30
  • 300:$1.8900
  • 150:$1.9900
  • 90:$2.0900
  • 60:$2.1900
  • 30:$2.2900
TK25N60X,S1F(S
DISTI # TK25N60X,S1F(S		Toshiba America Electronic ComponentsTrans MOSFET N-CH 600V 25A 3-Pin TO-247 (Alt: TK25N60X,S1F(S)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    TK25N60X,S1F(S
    DISTI # TK25N60X,S1F(S    		Toshiba America Electronic ComponentsTrans MOSFET N-CH 600V 25A 3-Pin TO-247 (Alt: TK25N60X,S1F(S)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€1.7900
    • 500:€1.8900
    • 100:€1.9900
    • 50:€2.0900
    • 25:€2.1900
    • 10:€2.2900
    • 1:€2.4900
    TK25N60X,S1F
    DISTI # 757-TK25N60XS1F    		Toshiba America Electronic ComponentsMOSFET Power MOSFET N-Channel
    RoHS: Compliant    		95
    • 1:$4.2700
    • 10:$3.4300
    • 100:$3.1300
    • 250:$2.8200
    • 500:$2.5300
    • 1000:$2.1400
    • 2500:$2.0300
    TK25N60X,S1F(S
    DISTI # 1250557    		Toshiba America Electronic ComponentsMOSFET N-CHANNEL 600V 25A TO247, PK16
    • 100:£1.2450
    • 50:£1.2600
    • 20:£1.2700
    • 10:£1.3800
    • 2:£2.3050
    TK25N60X,S1FToshiba America Electronic ComponentsMOSFET Power MOSFET N-Channel
    RoHS: Compliant    		Americas -
      TK25N60XS1FToshiba America Electronic ComponentsMOSFET MOSFET POWER N-CHANNEL
      RoHS: Compliant      		Americas -
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        Verfügbarkeit
        Aktie:
        83
        Auf Bestellung:
        2066
        Menge eingeben:
        Der aktuelle Preis von TK25N60X,S1F dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        4,27 $
        4,27 $
        10
        3,43 $
        34,30 $
        100
        3,13 $
        313,00 $
        250
        2,82 $
        705,00 $
        500
        2,53 $
        1 265,00 $
        1000
        2,14 $
        2 140,00 $
        2500
        2,03 $
        5 075,00 $
        5000
        1,96 $
        9 800,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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