SI4425BDY-T1-GE3

SI4425BDY-T1-GE3
Mfr. #:
SI4425BDY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V 11.4A 2.5W 12mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4425BDY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4425BDY-T1-GE3 DatasheetSI4425BDY-T1-GE3 Datasheet (P4-P6)SI4425BDY-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SI4425BDY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Serie:
SI4
Breite:
3.9 mm
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4425BDY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4425BDY-T, SI4425BDY, SI4425BD, SI4425B, SI4425, SI442, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-11.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-400mV; Power Dissipation Pd:2.5W
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.8A; On Resistance Rds(On):0.01Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3Mv; Product Range:-Rohs Compliant: No
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4425BDY-T1-GE3
DISTI # SI4425BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 8.8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.9355
SI4425BDY-T1-GE3
DISTI # SI4425BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 30V 8.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2500In Stock
  • 1000:$1.0350
  • 500:$1.2491
  • 100:$1.6060
  • 10:$1.9990
  • 1:$2.2100
SI4425BDY-T1-GE3
DISTI # SI4425BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 8.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2500In Stock
  • 1000:$1.0350
  • 500:$1.2491
  • 100:$1.6060
  • 10:$1.9990
  • 1:$2.2100
SI4425BDY-T1-GE3
DISTI # SI4425BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4425BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5619
  • 5000:$0.5459
  • 10000:$0.5229
  • 15000:$0.5089
  • 25000:$0.4949
SI4425BDY-T1-GE3
DISTI # 26R1875
Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-11.4A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$1.3100
  • 10:$1.0800
  • 25:$0.9940
  • 50:$0.9170
  • 100:$0.8540
  • 250:$0.7920
  • 500:$0.7410
SI4425BDY-T1-GE3
DISTI # 15R5010
Vishay IntertechnologiesP CH MOSFET,Continuous Drain Current Id:-11.4A,Drain Source Voltage Vds:-30V,Filter Terminals:Surface Mount,No. of Pins:8,On Resistance Rds(on):19mohm,Operating Temperature Range:-55°C to +150°C,Package / Case:8-SOIC RoHS Compliant: Yes0
  • 1:$0.8640
  • 2500:$0.8570
  • 5000:$0.8320
  • 10000:$0.8010
SI4425BDY-T1-GE3.
DISTI # 28AC2137
Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:8.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3mV,Power Dissipation Pd:1.5W,No. of Pins:8Pins RoHS Compliant: No0
  • 1:$0.8640
  • 2500:$0.8570
  • 5000:$0.8320
  • 10000:$0.8010
SI4425BDY-T1-GE3
DISTI # 781-SI4425BDY-GE3
Vishay IntertechnologiesMOSFET 30V 11.4A 2.5W 12mohm @ 10V
RoHS: Compliant
3960
  • 1:$1.3100
  • 10:$1.0800
  • 100:$0.8230
  • 500:$0.7080
  • 1000:$0.5590
  • 2500:$0.5220
Bild Teil # Beschreibung
TL331QDBVRQ1

Mfr.#: TL331QDBVRQ1

OMO.#: OMO-TL331QDBVRQ1

Analog Comparators AC Sgl Diff Comp- arator
FT232RQ-REEL

Mfr.#: FT232RQ-REEL

OMO.#: OMO-FT232RQ-REEL

USB Interface IC USB to Serial UART Enhanced IC QFN-32
US1NWF-7

Mfr.#: US1NWF-7

OMO.#: OMO-US1NWF-7

Rectifiers Ultra-Fast Recovery Rectifier
2N7002E-T1-E3

Mfr.#: 2N7002E-T1-E3

OMO.#: OMO-2N7002E-T1-E3

MOSFET 60V 0.24A
SQ2337ES-T1_GE3

Mfr.#: SQ2337ES-T1_GE3

OMO.#: OMO-SQ2337ES-T1-GE3-3D7

MOSFET P-Channel 80V AEC-Q101 Qualified
BSZ15DC02KD H

Mfr.#: BSZ15DC02KD H

OMO.#: OMO-BSZ15DC02KD-H

MOSFET SMALL SIGNAL+P-CH
M55-7026842R

Mfr.#: M55-7026842R

OMO.#: OMO-M55-7026842R

Board to Board & Mezzanine Connectors 68P 1.27 SMC Male
TL331QDBVRQ1

Mfr.#: TL331QDBVRQ1

OMO.#: OMO-TL331QDBVRQ1-TEXAS-INSTRUMENTS

Analog Comparators AC Sgl Diff Comp- arato
IHLP2020CZER2R2M5A

Mfr.#: IHLP2020CZER2R2M5A

OMO.#: OMO-IHLP2020CZER2R2M5A-819

Fixed Inductors 2.2uH 20% Automotive
2N7002E-T1-E3

Mfr.#: 2N7002E-T1-E3

OMO.#: OMO-2N7002E-T1-E3-VISHAY

MOSFET N-CH 60V 240MA SOT-23
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von SI4425BDY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,30 $
1,30 $
10
1,07 $
10,70 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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