OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SIZ710DT-T1-GE3

SIZ710DT-T1-GE3
Mfr. #:
SIZ710DT-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIZ710DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ710DT-T1-GE3 DatasheetSIZ710DT-T1-GE3 Datasheet (P4-P6)SIZ710DT-T1-GE3 Datasheet (P7-P9)SIZ710DT-T1-GE3 Datasheet (P10-P12)SIZ710DT-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Mehr Informationen:
SIZ710DT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAIR-6x3.7-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
16 A, 35 A
Rds On - Drain-Source-Widerstand:
6.8 mOhms, 3.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
18 nC, 60 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
27 W, 48 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
GRÖSSE
Transistortyp:
2 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
45 S, 85 S
Abfallzeit:
12 ns, 12 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns, 15 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns, 30 ns
Typische Einschaltverzögerungszeit:
15 ns, 25 ns
Teil # Aliase:
SIZ710DT-GE3
Tags
SIZ710DT-T, SIZ71, SIZ7, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 20 V 0.0068 Ohm Surface Mount Power MosFet - PowerPAIR 6 x 3.7 mm
***et Europe
Transistor MOSFET Array Dual N-CH 20V 16A/35A 6-Pin PowerPAIR T/R
***ark
MOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:35A; Drain Source Voltage Vds, N Channel:20V; On Resistance Rds(on), N Channel:0.0068ohm; Rds(on) Test Voltage Vgs:10V
***ment14 APAC
MOSFET,NN CH,HALF BR,DIO,20V,PPAIR6; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:4.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAIR; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):5500µohm; Power Dissipation Pd:4.6W
Dual N-Channel TrenchFET® Power MOSFETs
Vishay Siliconix Dual N-Channl TrenchFET® Power MOSFETs offers co-packaged MOSFETs to reduce space and increase performance over two discretes. These Dual N-Channel TrenchFET® Power MOSFETs combines two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs simplify layout, reduces parasitic inductance from PCB traces, increases efficiency and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Teil # Mfg. Beschreibung Aktie Preis
SIZ710DT-T1-GE3
DISTI # V72:2272_09216120		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R
RoHS: Compliant		2000
  • 1000:$0.6544
  • 500:$0.7412
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 10:$1.0236
  • 1:$1.1931
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		6In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		6In Stock
  • 1000:$0.7308
  • 500:$0.9257
  • 100:$1.1936
  • 10:$1.5100
  • 1:$1.7100
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 20V 16A POWERPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.6622
SIZ710DT-T1-GE3
DISTI # 30150542		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R
RoHS: Compliant		2000
  • 1000:$0.6544
  • 500:$0.7412
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 12:$1.0236
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 3000:$0.6596
  • 6000:$0.5074
  • 9000:$0.4039
  • 15000:$0.3412
  • 30000:$0.3141
  • 75000:$0.3044
  • 150000:$0.2954
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€1.2499
  • 6000:€0.8959
  • 12000:€0.7269
  • 18000:€0.6429
  • 30000:€0.6149
SIZ710DT-T1-GE3
DISTI # SIZ710DT-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 20V 16A/30A 6-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZ710DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.6249
  • 6000:$0.6069
  • 12000:$0.5819
  • 18000:$0.5659
  • 30000:$0.5509
SIZ710DT-T1-GE3
DISTI # 83T3536		Vishay IntertechnologiesMOSFET, DUAL N CHANNEL, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes0
  • 1:$1.5100
  • 25:$1.2400
  • 50:$1.1000
  • 100:$0.9510
  • 250:$0.8850
  • 500:$0.8180
  • 1000:$0.7190
SIZ710DT-T1-GE3
DISTI # 65T1676		Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, 16A/35A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:20V,On Resistance Rds(on):5500µohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V , RoHS Compliant: Yes0
  • 1:$0.6370
  • 3000:$0.6330
  • 6000:$0.6020
  • 12000:$0.5340
SIZ710DT-T1-GE3
DISTI # 781-SIZ710DT-T1-GE3		Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7
RoHS: Compliant		378
  • 1:$1.5100
  • 10:$1.2400
  • 100:$0.9510
  • 500:$0.8180
  • 1000:$0.7190
  • 3000:$0.7170
SIZ710DT-T1-GE3
DISTI # C1S803601344629		Vishay IntertechnologiesMOSFETs2000
  • 250:$0.8087
  • 100:$0.8367
  • 25:$0.9213
  • 10:$1.0236
SIZ710DT-T1-GE3Vishay IntertechnologiesMOSFET 20V Vds 20V Vgs PowerPAIR 6 x 3.7Americas -
    SIZ710DT-T1-GE3
    DISTI # 2129099    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 20V, 16A/35A, POWERPA
    RoHS: Compliant    		0
    • 3000:£0.6370
    Bild Teil # Beschreibung
    S1G-13-F

    Mfr.#: S1G-13-F

    OMO.#: OMO-S1G-13-F

    		 Rectifiers 400V 1A
    S1G-13-F

    Mfr.#: S1G-13-F

    OMO.#: OMO-S1G-13-F-DIODES

    		 DIODE GEN PURP 400V 1A SMA
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von SIZ710DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,50 $
    1,50 $
    10
    1,23 $
    12,30 $
    100
    0,95 $
    95,00 $
    500
    0,82 $
    408,50 $
    1000
    0,64 $
    644,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    More Newest Products
    Top