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IXFR64N60P

IXFR64N60P
Mfr. #:
IXFR64N60P
Hersteller:
Littelfuse
Beschreibung:
MOSFET DIODE Id36 BVdass600
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFR64N60P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR64N60P DatasheetIXFR64N60P Datasheet (P4-P5)
ECAD Model:
Mehr Informationen:
IXFR64N60P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
36 A
Rds On - Drain-Source-Widerstand:
105 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
360 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
21.34 mm
Länge:
16.13 mm
Serie:
IXFR64N60
Transistortyp:
1 N-Channel
Breite:
5.21 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
63 S
Abfallzeit:
24 ns
Produktart:
MOSFET
Anstiegszeit:
23 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
79 ns
Typische Einschaltverzögerungszeit:
28 ns
Gewichtseinheit:
0.186952 oz
Tags
IXFR64, IXFR6, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 36 A 105 mO PolarHT HiPerFET Power Mosfet - ISOPLUS-247
***ical
Trans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
***nell
MOSFET, N, ISOPLUS247; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:36A; Resistance, Rds On:0.105ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:ISOPLUS-247; Termination Type:Through Hole; N-channel Gate Charge:200nC; Power, Pd:360W; Typ Capacitance Ciss:12000pF; Voltage, Isolation:2500V; Voltage, Vds Max:600V; Rth:0.35; Time, trr Max:200ns
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFR64N60P
DISTI # V36:1790_15878443		IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		20
  • 1000:$8.1290
  • 500:$8.8510
  • 250:$9.6860
  • 100:$10.5040
  • 50:$10.8300
  • 25:$11.7040
  • 10:$12.5840
  • 1:$13.7130
IXFR64N60P
DISTI # IXFR64N60P-ND		IXYS CorporationMOSFET N-CH 600V 36A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$12.7797
IXFR64N60P
DISTI # 30696577		IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		20
  • 10:$12.5840
  • 1:$13.7130
IXFR64N60P
DISTI # 747-IXFR64N60P		IXYS CorporationMOSFET DIODE Id36 BVdass600
RoHS: Compliant		145
  • 1:$15.8900
  • 10:$14.4400
  • 25:$13.3600
  • 50:$12.2900
  • 100:$11.9900
  • 250:$10.9900
  • 500:$9.9700
IXFR64N60P
DISTI # C1S331700009007		IXYS CorporationTrans MOSFET N-CH Si 600V 36A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant		20
  • 50:$10.8300
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IXFR64N60Q3

Mfr.#: IXFR64N60Q3

OMO.#: OMO-IXFR64N60Q3

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0326.250MXP

Mfr.#: 0326.250MXP

OMO.#: OMO-0326-250MXP-LITTELFUSE

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DSEC29-06AC

Mfr.#: DSEC29-06AC

OMO.#: OMO-DSEC29-06AC-IXYS-CORPORATION

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RC2010FK-07470KL

Mfr.#: RC2010FK-07470KL

OMO.#: OMO-RC2010FK-07470KL-YAGEO

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STTH6002CPI

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OMO.#: OMO-STTH6002CPI-STMICROELECTRONICS

 DIODE ARRAY GP 200V 30A 3TOPI
Verfügbarkeit
Aktie:
133
Auf Bestellung:
2116
Menge eingeben:
Der aktuelle Preis von IXFR64N60P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
15,89 $
15,89 $
10
14,44 $
144,40 $
25
13,36 $
334,00 $
50
12,29 $
614,50 $
100
11,99 $
1 199,00 $
250
10,99 $
2 747,50 $
500
9,97 $
4 985,00 $
1000
9,11 $
9 110,00 $
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