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VN2460N3-G-P014

VN2460N3-G-P014
Mfr. #:
VN2460N3-G-P014
Hersteller:
Microchip Technology
Beschreibung:
MOSFET N-CH Enhancmnt Mode MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
VN2460N3-G-P014 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
VN2460N3-G-P014 Mehr Informationen VN2460N3-G-P014 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Mikrochip
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
160 mA
Rds On - Drain-Source-Widerstand:
25 Ohms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Munitionspackung
Höhe:
5.33 mm
Länge:
5.21 mm
Produkt:
MOSFET Kleinsignal
Transistortyp:
1 N-Channel
Breite:
4.19 mm
Marke:
Mikrochip-Technologie
Abfallzeit:
20 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
25 ns
Typische Einschaltverzögerungszeit:
10 ns
Gewichtseinheit:
0.016000 oz
Tags
VN2460N3-G, VN2460N3, VN2460N, VN246, VN24, VN2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES
***ical
Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 Ammo
***(Formerly Allied Electronics)
MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 Ohm3 TO-92 AMMO | Microchip Technology Inc. VN2460N3-G-P014
***rochip SCT
Enhancement-Mode N-Channel, 20Ω, 4V, TO-92-3, RoHS
*** Electronic Components
MOSFET N-CH Enhancmnt Mode MOSFET
***ure Electronics
P-Channel 60 V 14 Ohm Enhancement Mode Vertical DMOS FET - TO-92
***nsix Microsemi
Small Signal Field-Effect Transistor, 0.16A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***ment14 APAC
MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:160mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):14ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-160mA; Current Temperature:25°C; Device Marking:ZVP3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:1.6A; Termination Type:Through Hole; Voltage Vds Typ:-60V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:-10V
***ark
Mosfet, N-Ch, 240V, 0.16A, E-Line Rohs Compliant: Yes |Diodes Inc. ZVN0124A
***et
Trans MOSFET N-CH 240V 0.16A 3-Pin E-Line
***des Inc SCT
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET, 240 V, RoHS
*** Stop Electro
Small Signal Field-Effect Transistors
***hard Electronics
P-channel MOSFET Transistor, -140 mA -100 V, 3-Pin TO-92
***ure Electronics
ZVP3310 Series P-Channel 100 V 140 mA 625 mW Vertical DMOS FET - TO-92
***ark
Mosfet, P-Ch, 100V, 0.14A, E-Line Rohs Compliant: Yes |Diodes Inc. ZVP3310A
***et Europe
Transistor MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***r Electronics
Small Signal Field-Effect Transistor, 0.36A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***p One Stop Global
Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo
***el Electronic
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
***rchild Semiconductor
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
***icroelectronics
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in TO-92 package
***et
Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 Ammo Pack
*** Electronic Components
MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET
***r Electronics
Small Signal Field-Effect Transistor
***el Electronic
CAP CER 2200PF 250V C0G RADIAL
Teil # Mfg. Beschreibung Aktie Preis
VN2460N3-G-P014
DISTI # V72:2272_06516013		Microchip Technology IncTrans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 T/R
RoHS: Compliant		1986
  • 75000:$0.7346
  • 30000:$0.7426
  • 15000:$0.7508
  • 6000:$0.7590
  • 3000:$0.7655
  • 1000:$0.7738
  • 500:$0.7822
  • 250:$0.7906
  • 100:$0.7991
  • 50:$0.8710
  • 25:$0.8806
  • 10:$1.0158
  • 1:$1.0405
VN2460N3-G-P014
DISTI # VN2460N3-G-P014-ND		Microchip Technology IncMOSFET N-CH 600V 0.16A TO92-3
RoHS: Compliant
Min Qty: 2000
Container: Tape & Box (TB)		Temporarily Out of Stock
  • 2000:$0.9270
VN2460N3-G-P014
DISTI # 25749296		Microchip Technology IncTrans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 T/R
RoHS: Compliant		1986
  • 1000:$0.7738
  • 500:$0.7822
  • 250:$0.7906
  • 100:$0.7991
  • 50:$0.8710
  • 25:$0.8806
  • 12:$1.0158
VN2460N3-G-P014
DISTI # 70483928		Microchip Technology IncMOSFET,N-CHANNEL ENHANCEMENT-MODE,600V,20 Ohm3 TO-92AMMO
RoHS: Compliant		0
  • 2000:$1.3600
VN2460N3-G-P014
DISTI # 689-VN2460N3-G-P014		Microchip Technology IncMOSFET N-CH Enhancmnt Mode MOSFET
RoHS: Compliant		3957
  • 1:$1.2300
  • 10:$1.2100
  • 25:$1.0200
  • 100:$0.9270
VN2460N3-G-P014
DISTI # VN2460N3-G-P014		Microchip Technology IncMOSFETN-CHANNEL ENHANCEMENT-MODE600V20 Ohm
RoHS: Compliant		0
  • 1000:$0.7500
  • 100:$0.9000
  • 26:$0.9900
  • 1:$1.1900
VN2460N3-G-P014
DISTI # C1S505201327120		Microchip Technology IncTrans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 T/R
RoHS: Compliant		1986
  • 100:$0.7991
  • 50:$0.8710
  • 25:$0.8806
  • 10:$1.0158
Bild Teil # Beschreibung
08055A103JAT2A

Mfr.#: 08055A103JAT2A

OMO.#: OMO-08055A103JAT2A

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V .01uF C0G 0805 5%
RCV1206100KJNEA

Mfr.#: RCV1206100KJNEA

OMO.#: OMO-RCV1206100KJNEA

 Thick Film Resistors - SMD 0.25w 100Kohm 5% 200PPM
1658621-3

Mfr.#: 1658621-3

OMO.#: OMO-1658621-3

 Headers & Wire Housings CNTR PLRZD RECPT 16P NOVO
1761681-6

Mfr.#: 1761681-6

OMO.#: OMO-1761681-6

 Headers & Wire Housings IDC CONNECTOR
A04P-5

Mfr.#: A04P-5

OMO.#: OMO-A04P-5-XP-POWER

 DC DC CONVERTER 400V 1W
15167-0243

Mfr.#: 15167-0243

OMO.#: OMO-15167-0243-488

 FFC / FPC Jumper Cables FFC 1.00 Type A 8 ckts lgt 305
15167-0321

Mfr.#: 15167-0321

OMO.#: OMO-15167-0321-488

 FFC / FPC Jumper Cables 16C 1.00MM EXTRA-FLX FFC P-FLX 6.00" LG A
CRG1206F22M

Mfr.#: CRG1206F22M

OMO.#: OMO-CRG1206F22M-TE-CONNECTIVITY-AMP

 Thick Film Resistors - SMD CRG1206 1% 22M
1761681-6

Mfr.#: 1761681-6

OMO.#: OMO-1761681-6-TE-CONNECTIVITY

 Headers & Wire Housings IDC CONNECTOR
RCV1206100KJNEA

Mfr.#: RCV1206100KJNEA

OMO.#: OMO-RCV1206100KJNEA-VISHAY-DALE

 Thick Film Resistors - SMD 0.25w 100Kohm 5% 200PPM
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von VN2460N3-G-P014 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,22 $
1,22 $
10
1,20 $
12,00 $
25
1,01 $
25,25 $
100
0,93 $
92,70 $
250
0,82 $
203,75 $
500
0,70 $
347,50 $
1000
0,63 $
633,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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