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SI4456DY-T1-E3

SI4456DY-T1-E3
Mfr. #:
SI4456DY-T1-E3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 40V 33A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4456DY-T1-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI4456DY-T1-E3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
IC-Chips
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI4456DY-E3
Gewichtseinheit
0.006596 oz
Montageart
SMD/SMT
Paket-Koffer
8-SOIC (0.154", 3.90mm Width)
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
8-SO
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
7.8W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
40V
Eingangskapazität-Ciss-Vds
5670pF @ 20V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
33A (Tc)
Rds-On-Max-Id-Vgs
3.8 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.8V @ 250μA
Gate-Lade-Qg-Vgs
122nC @ 10V
Pd-Verlustleistung
3.5 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
15 ns 8 ns
Anstiegszeit
208 ns 58 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
23 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Rds-On-Drain-Source-Widerstand
3.8 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
56 ns 55 ns
Typische-Einschaltverzögerungszeit
145 ns 21 ns
Kanal-Modus
Erweiterung
Tags
SI4456, SI445, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 0.0038 Ohm Surface Mount Power Mosfet - SOIC-8
***C
MOSFET N-CH 40V 33A 8-SOIC MOSFET N-CH 40V 33A 8-SOIC
***et Europe
Trans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R
***nell
N CHANNEL MOSFET, 40V, 33A, SOIC
***i-Key
MOSFET N-CH 40V 33A 8-SOIC
***
N-CHANNEL 40-V (D-S) MOSFET
***ser
N-Channel MOSFETs N-CH 40V(D-S)
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0031Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:7.8W; No. Of Pins:8Pins Rohs Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 40V, 33A, SOIC; Transi; N CHANNEL MOSFET, 40V, 33A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:2.8V; No. of Pins:8
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4456DY-T1-E3
DISTI # SI4456DY-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 40V 33A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 2500:$1.1847
SI4456DY-T1-E3
DISTI # SI4456DY-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 40V 33A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.3107
  • 500:$1.5818
  • 100:$2.0338
  • 10:$2.5310
  • 1:$2.8000
SI4456DY-T1-E3
DISTI # SI4456DY-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 33A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.3107
  • 500:$1.5818
  • 100:$2.0338
  • 10:$2.5310
  • 1:$2.8000
SI4456DY-T1-E3
DISTI # SI4456DY-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4456DY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.8399
  • 5000:$0.8149
  • 10000:$0.7819
  • 15000:$0.7599
  • 25000:$0.7399
SI4456DY-T1-E3
DISTI # 64M1992		Vishay IntertechnologiesTrans MOSFET N-CH 40V 23A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 64M1992)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$2.8000
  • 10:$2.3300
  • 25:$2.1500
  • 50:$1.9800
  • 100:$1.8000
  • 250:$1.6900
  • 500:$1.5800
SI4456DY-T1-E3
DISTI # 64M1992		Vishay IntertechnologiesN CHANNEL MOSFET, 40V, 33A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:40V,On Resistance Rds(on):4.5mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.8V,Product Range:- , RoHS Compliant: Yes0
  • 1:$2.8000
  • 10:$2.3300
  • 25:$2.1500
  • 50:$1.9800
  • 100:$1.8000
  • 250:$1.6900
  • 500:$1.5800
SI4456DY-T1-E3.
DISTI # 26AC3332		Vishay IntertechnologiesN-CHANNEL 40-V (D-S) MOSFET , ROHS COMPLIANT: YES0
  • 1:$0.8400
  • 5000:$0.8150
  • 10000:$0.7820
  • 15000:$0.7600
  • 25000:$0.7400
SI4456DY-T1-E3
DISTI # 781-SI4456DY-T1-E3		Vishay IntertechnologiesMOSFET 40V 33A 7.8W 3.8mohm @ 10V
RoHS: Compliant		7
  • 1:$2.8000
  • 10:$2.3300
  • 100:$1.8000
  • 500:$1.5800
  • 1000:$1.5100
  • 2500:$1.5000
SI4456DY-T1-E3Vishay IntertechnologiesMOSFET 40V 33A 7.8W 3.8mohm @ 10VAmericas -
    Bild Teil # Beschreibung
    SI4456DY-T1-E3

    Mfr.#: SI4456DY-T1-E3

    OMO.#: OMO-SI4456DY-T1-E3

    		 MOSFET 40V 33A 7.8W 3.8mohm @ 10V
    SI4456DY-T1-GE3

    Mfr.#: SI4456DY-T1-GE3

    OMO.#: OMO-SI4456DY-T1-GE3

    		 MOSFET 40V 33A 7.8W 3.8mohm @ 10V
    SI4456DY-T1-GE3

    Mfr.#: SI4456DY-T1-GE3

    OMO.#: OMO-SI4456DY-T1-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 40V 33A 7.8W 3.8mohm @ 10V
    SI4456DY-T1-E3-CUT TAPE

    Mfr.#: SI4456DY-T1-E3-CUT TAPE

    OMO.#: OMO-SI4456DY-T1-E3-CUT-TAPE-1190

    		 Neu und Original
    SI4456DY-T1-E3

    Mfr.#: SI4456DY-T1-E3

    OMO.#: OMO-SI4456DY-T1-E3-VISHAY

    		 MOSFET N-CH 40V 33A 8-SOIC
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von SI4456DY-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,09 $
    1,09 $
    10
    1,03 $
    10,34 $
    100
    0,98 $
    98,00 $
    500
    0,93 $
    462,75 $
    1000
    0,87 $
    871,10 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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