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FDU8580

FDU8580
Mfr. #:
FDU8580
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET 20V 35A 9 OHM NCH POWER TRENC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FDU8580 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDU8580 DatasheetFDU8580 Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
35 A
Rds On - Drain-Source-Widerstand:
6.6 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
49.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
16.3 mm
Länge:
10.67 mm
Transistortyp:
1 N-Channel
Typ:
MOSFET
Breite:
4.7 mm
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
61 S
Abfallzeit:
34 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
75
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
59 ns
Typische Einschaltverzögerungszeit:
7 ns
Gewichtseinheit:
0.139332 oz
Tags
FDU8, FDU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ter Electronics
20V,35A,9 OHM, NCH POWER TRENCH MOSFET
***i-Key
MOSFET N-CH 20V 35A I-PAK
***nell
MOSFET, N, I-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:35A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.8V; Case Style:I-PAK; Termination Type:Through Hole; Alternate Case Style:TO-251AA; Current, Idm Pulse:159A; No. of Pins:3; Pin Configuration:1(G), 2(D), 3(S); Power Dissipation:49.5W; Power, Pd:49.5W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:175°C; Temperature, Tj Min:-55°C; Typ Capacitance Ciss:1085pF; Voltage, Vds:20V; Voltage, Vds Max:20V; Voltage, Vgs th Max:2.5V
Teil # Mfg. Beschreibung Aktie Preis
FDU8580
DISTI # FDU8580-ND		ON SemiconductorMOSFET N-CH 20V 35A I-PAK
RoHS: Compliant
Min Qty: 1800
Container: Tube		Limited Supply - Call
    FDU8580Fairchild Semiconductor CorporationPower Field-Effect Transistor, 35A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Compliant    		7200
    • 1000:$0.5900
    • 500:$0.6200
    • 100:$0.6500
    • 25:$0.6800
    • 1:$0.7300
    FDU8580
    DISTI # 512-FDU8580    		ON SemiconductorMOSFET 20V 35A 9 OHM NCH POWER TRENC
    RoHS: Compliant    		0
      FDU8580
      DISTI # 1324815      		ON Semiconductor 
      RoHS: Compliant      		0
      • 1:$1.5500
      • 10:$1.1200
      • 100:$1.0400
      • 250:$0.9870
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1500
      Menge eingeben:
      Der aktuelle Preis von FDU8580 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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