IRF7862TRPBF

IRF7862TRPBF
Mfr. #:
IRF7862TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 30V 21A 3.3mOhm 30nC Qg
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7862TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7862TRPBF DatasheetIRF7862TRPBF Datasheet (P4-P6)IRF7862TRPBF Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
IRF7862TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
21 A
Rds On - Drain-Source-Widerstand:
4.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
30 nC
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001577668
Gewichtseinheit:
0.019048 oz
Tags
IRF7862T, IRF786, IRF78, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
On a Reel of 4000, N-Channel MOSFET, 21 A, 30 V, 8-Pin SOIC Infineon IRF7862TRPBF
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 45 nC HEXFET® Power Mosfet - SOIC-8
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***ied Electronics & Automation
MOSFET; N Ch.; 30V; 21A; 3.7 MOHM; 30 NC QG; SO-8; Pb-Free
***p One Stop Global
Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***i-Key
MOSFET N-CH 30V 21A 8-SOIC
***ukat
N-Ch 30V 21A 2,5W 0,0033R SO8
***ark
Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:21A; On Resistance, Rds(on):3.7mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SOIC; No. of Pins:8 ;RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 21A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 30V, 21A, SOIC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:21A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.003ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.35V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:HEXFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF7862TRPBF
DISTI # V72:2272_13890538
Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R2085
  • 1000:$0.4430
  • 500:$0.4676
  • 250:$0.5195
  • 100:$0.5772
  • 25:$0.7181
  • 10:$0.7215
  • 1:$0.8115
IRF7862TRPBF
DISTI # IRF7862TRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 30V 21A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3197In Stock
  • 1000:$0.6159
  • 500:$0.7632
  • 100:$0.9658
  • 10:$1.2050
  • 1:$1.3500
IRF7862TRPBF
DISTI # IRF7862TRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 30V 21A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3197In Stock
  • 1000:$0.6159
  • 500:$0.7632
  • 100:$0.9658
  • 10:$1.2050
  • 1:$1.3500
IRF7862TRPBF
DISTI # IRF7862TRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 30V 21A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
On Order
  • 4000:$0.5623
IRF7862TRPBF
DISTI # 31077179
Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R4000
  • 4000:$0.4685
IRF7862TRPBF
DISTI # 30195965
Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R2085
  • 1000:$0.4430
  • 500:$0.4676
  • 250:$0.5195
  • 100:$0.5772
  • 25:$0.7181
  • 20:$0.7215
IRF7862TRPBF
DISTI # IRF7862TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7862TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel
Americas - 0
  • 4000:$0.3739
  • 8000:$0.3609
  • 16000:$0.3479
  • 24000:$0.3359
  • 40000:$0.3299
IRF7862TRPBF
DISTI # IRF7862TRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R (Alt: IRF7862TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Asia - 0
  • 4000:$0.3984
  • 8000:$0.3820
  • 12000:$0.3768
  • 20000:$0.3622
  • 40000:$0.3575
  • 100000:$0.3486
  • 200000:$0.3401
IRF7862TRPBF
DISTI # SP001577668
Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R (Alt: SP001577668)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel
Europe - 0
  • 4000:€0.4079
  • 8000:€0.3339
  • 16000:€0.3059
  • 24000:€0.2829
  • 40000:€0.2619
IRF7862TRPBF
DISTI # 32AC7476
Infineon Technologies AGMOSFET, N-CH, 30V, 21A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.35V,Power Dissipation RoHS Compliant: Yes1889
  • 1:$1.0700
  • 10:$0.9100
  • 25:$0.8400
  • 50:$0.7690
  • 100:$0.6990
  • 250:$0.6590
  • 500:$0.6180
  • 1000:$0.4880
IRF7862TRPBF
DISTI # 70017883
Infineon Technologies AGMOSFET,N Ch.,30V,21A,3.7 MOHM,30 NC QG,SO-8,Pb-Free
RoHS: Compliant
0
  • 4000:$1.2410
IRF7862TRPBF
DISTI # 942-IRF7862TRPBF
Infineon Technologies AGMOSFET MOSFT 30V 21A 3.3mOhm 30nC Qg
RoHS: Compliant
416
  • 1:$1.0700
  • 10:$0.9100
  • 100:$0.6990
  • 500:$0.6180
  • 1000:$0.4880
  • 4000:$0.4330
IRF7862TRPBFInternational Rectifier 
RoHS: Not Compliant
3350
  • 1000:$0.4300
  • 500:$0.4600
  • 100:$0.4800
  • 25:$0.5000
  • 1:$0.5300
IRF7862TRPBF
DISTI # 1300962P
Infineon Technologies AGMOSFET HEXFET N-CH 30V 21A SOIC8, RL3020
  • 50:£0.2270
IRF7862TRPBFInternational Rectifier 121
    IRF7862TRPBFInternational Rectifier 2025
      IRF7862TRPBFInternational Rectifier 3868
        IRF7862TRPBF
        DISTI # IRF7862PBF-GURT
        Infineon Technologies AGN-Ch 30V 21A 2,5W 0,0033R SO8
        RoHS: Compliant
        0
        • 50:€0.3300
        • 100:€0.2900
        • 500:€0.2700
        • 2000:€0.2600
        IRF7862TRPBF
        DISTI # XSLY00000000859
        INFINEON/IRSO-8
        RoHS: Compliant
        4000
        • 4000:$0.4000
        IRF7862TRPBF
        DISTI # XSFP00000152691
        Infineon Technologies AGPowerField-EffectTransistor,N-Channel,Metal-oxideSemiconductor FET
        RoHS: Compliant
        16152
        • 4000:$0.7200
        • 16152:$0.6545
        IRF7862TRPBF
        DISTI # 2777398
        Infineon Technologies AGMOSFET, N-CH, 30V, 21A, SOIC
        RoHS: Compliant
        1889
        • 5:$1.3600
        • 25:$1.1800
        • 100:$0.9640
        • 250:$0.8140
        • 500:$0.7050
        • 1000:$0.6660
        • 5000:$0.6320
        IRF7862TRPBF
        DISTI # 2777398
        Infineon Technologies AGMOSFET, N-CH, 30V, 21A, SOIC
        RoHS: Compliant
        2204
        • 5:£0.4390
        • 25:£0.3640
        • 100:£0.3260
        • 250:£0.3010
        • 500:£0.2810
        IRF7862TRPBF
        DISTI # C1S322000486661
        Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
        RoHS: Compliant
        2085
        • 250:$0.5195
        • 100:$0.5772
        • 25:$0.7181
        • 10:$0.7215
        IRF7862TRPBF
        DISTI # C1S322000486652
        Infineon Technologies AGTrans MOSFET N-CH 30V 21A 8-Pin SOIC T/R
        RoHS: Compliant
        4000
        • 4000:$0.4460
        Bild Teil # Beschreibung
        IRF9321TRPBF

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        OMO.#: OMO-CRCW04021K00FKEDC

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        OMO.#: OMO-ESP32-WROOM-32

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        MCP73123T-22SI/MF

        Mfr.#: MCP73123T-22SI/MF

        OMO.#: OMO-MCP73123T-22SI-MF-MICROCHIP-TECHNOLOGY

        Battery Management Sngl cel OVP LiFEPO3 battery charge
        MCP73123-22SI/MF

        Mfr.#: MCP73123-22SI/MF

        OMO.#: OMO-MCP73123-22SI-MF-MICROCHIP-TECHNOLOGY

        Battery Management Sngl cel OVP LiFEPO3 battery charge
        ESP32-WROOM-32

        Mfr.#: ESP32-WROOM-32

        OMO.#: OMO-ESP32-WROOM-32-ESPRESSIF-SYSTEMS

        SMD MODULE, ESP32-D0WDQ6, 32MBIT
        16SVPG270MX

        Mfr.#: 16SVPG270MX

        OMO.#: OMO-16SVPG270MX-PANASONIC

        CAP, 270UF, 16V, ALU ELEC, POLYMER, SMD
        CRCW040210K0FKEDC

        Mfr.#: CRCW040210K0FKEDC

        OMO.#: OMO-CRCW040210K0FKEDC-VISHAY-DALE

        D10/CRCW0402-C 100 10K 1% ET7
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1985
        Menge eingeben:
        Der aktuelle Preis von IRF7862TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,06 $
        1,06 $
        10
        0,91 $
        9,10 $
        100
        0,70 $
        69,90 $
        500
        0,62 $
        309,00 $
        1000
        0,49 $
        488,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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