BSC080N03LSGATMA1

Mfr. #:: BSC080N03LSGATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC080N03LSGATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TDSON-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 53 A

Rds On - Drain-Source-Widerstand:: 6.7 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 21 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 35 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: OptiMOS

Verpackung:: Spule

Höhe:: 1.27 mm

Länge:: 5.9 mm

Serie:: OptiMOS 3

Transistortyp:: 1 N-Channel

Breite:: 5.15 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 30 S

Abfallzeit:: 2.6 ns

Produktart:: MOSFET

Anstiegszeit:: 2.8 ns

Werkspackungsmenge:: 5000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 15 ns

Typische Einschaltverzögerungszeit:: 3.3 ns

Teil # Aliase:: BSC080N03LS BSC8N3LSGXT G SP000275114

Gewichtseinheit:: 0.003915 oz

Tags: BSC080N03LSG, BSC080N03L, BSC080N, BSC080, BSC08, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC080N03LSGATMA1 Beschreibung

***ure Electronics: Single N-Channel 30 V 8 mOhm 16 nC OptiMOS Power Mosfet - TDSON-8

***ment14 APAC: MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon SCT: Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS

***ineon: With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC080N03LSGATMA1 DISTI # V72:2272_06390942	Infineon Technologies AG	Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R RoHS: Compliant	3336	3000:$0.1889 1000:$0.2227 500:$0.2475 250:$0.2750 100:$0.3055 25:$0.4363 10:$0.4418 1:$0.5104
BSC080N03LSGATMA1 DISTI # BSC080N03LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.2692
BSC080N03LSGATMA1 DISTI # BSC080N03LSGATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3287 500:$0.4108 100:$0.5546 10:$0.7190 1:$0.8200
BSC080N03LSGATMA1 DISTI # BSC080N03LSGATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3287 500:$0.4108 100:$0.5546 10:$0.7190 1:$0.8200
BSC080N03LSGATMA1 DISTI # 31003332	Infineon Technologies AG	Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R RoHS: Compliant	3336	3000:$0.1889 1000:$0.2525 500:$0.3043 250:$0.3076 100:$0.3111 32:$0.4363
BSC080N03LSGATMA1 DISTI # BSC080N03LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 14A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC080N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.2399 10000:$0.2389 20000:$0.2379 30000:$0.2379 50000:$0.2369
BSC080N03LSGATMA1 DISTI # 50Y1805	Infineon Technologies AG	MOSFET Transistor, N Channel, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V RoHS Compliant: Yes	439	1:$0.6500 10:$0.5400 25:$0.4760 50:$0.4120 100:$0.3480 250:$0.3250 500:$0.3020 1000:$0.2790
BSC080N03LSGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	4500	1000:$0.2200 500:$0.2400 100:$0.2500 25:$0.2600 1:$0.2800
BSC080N03LSGATMA1 DISTI # 726-BSC080N03LSGATMA	Infineon Technologies AG	MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 RoHS: Compliant	6236	1:$0.6800 10:$0.5620 100:$0.3630 1000:$0.2910
BSC080N03LS G DISTI # 726-BSC080N03LSG	Infineon Technologies AG	MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 RoHS: Compliant	4403	1:$0.6500 10:$0.5400 100:$0.3480 1000:$0.2790
BSC080N03LSGATMA1 DISTI # 7528160P	Infineon Technologies AG	MOSFET N-CHANNEL 30V 14A OPTIMOS3 TDSON8, RL	1910	125:£0.4140 500:£0.3780 1250:£0.3520 5000:£0.3280
BSC080N03LSGATMA1 DISTI # BSC080N03LSGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,43A,35W,PG-TDSON-8	2937	1:$0.6297 3:$0.3763 10:$0.3168 100:$0.2835 1000:$0.2548
BSC080N03LSGATMA1 DISTI # 2480740	Infineon Technologies AG	MOSFET, N-CH, 30V, 53A, TDSON-8 RoHS: Compliant	699	5:£0.4850 25:£0.4260 100:£0.2640 250:£0.2460 500:£0.2290
BSC080N03LSGATMA1 DISTI # 2480740	Infineon Technologies AG	MOSFET, N-CH, 30V, 53A, TDSON-8 RoHS: Compliant	439	1:$1.0300 10:$0.8550 100:$0.5510 1000:$0.4410 5000:$0.3900
BSC080N03LSGATMA1 DISTI # 2480740RL	Infineon Technologies AG	MOSFET, N-CH, 30V, 53A, TDSON-8 RoHS: Compliant	0	1:$1.0300 10:$0.8550 100:$0.5510 1000:$0.4410 5000:$0.3900
BSC080N03LSGATMA1 DISTI # C1S322000207143	Infineon Technologies AG	Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP T/R RoHS: Compliant	3336	250:$0.3078 100:$0.3111 25:$0.4365 10:$0.4419

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	Mfr.#: STEVAL-ESC001V1 OMO.#: OMO-STEVAL-ESC001V1-STMICROELECTRONICS	MOTOR CONTROL SOLUTION EVAL BOAR
	Mfr.#: HMK325C7475KMHPE OMO.#: OMO-HMK325C7475KMHPE-TAIYO-YUDEN	CAP CER 4.7UF 100V X7S 1210
	Mfr.#: CSTNE8M00G550000R0 OMO.#: OMO-CSTNE8M00G550000R0-MURATA-ELECTRONICS	Piezoelectric Ceramic Resonator 8.0000MHZ 33PF SMD

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von BSC080N03LSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,67 $~~; ~~0,67 $~~

10: ~~0,56 $~~; ~~5,62 $~~

100: ~~0,36 $~~; ~~36,30 $~~

1000: ~~0,29 $~~; ~~291,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSC080N03LSGATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes