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FP35R12KT4B15BOSA1

FP35R12KT4B15BOSA1
Mfr. #:
FP35R12KT4B15BOSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT MODULE VCES 1200V 35A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FP35R12KT4B15BOSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
FP35R12KT4B1, FP35R12KT4B, FP35R12KT4, FP35R12KT, FP35R12K, FP35R, FP35, FP3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 1200V 35A 210000mW 24-Pin ECONO2-5 Tray
***ment14 APAC
IGBT, L POWER, 1200V, 35A, ECONOPIM; Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Voltage Vces:1.85V; Power Dissipation Pd:210W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:EconoPIM; No. of Pins:23; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:210W
***ineon
EconoPIM 2 1200V three phase PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC (alternative mechnically compatible to an IGBT3 module) | Summary of Features: Low Switching Losses; Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power and Thermal Cycling Capability; Copper Base Plate; Solder Contact Technology; Standard Housing | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; medical; induction; aircon
Teil # Mfg. Beschreibung Aktie Preis
FP35R12KT4B15BOSA1
DISTI # V99:2348_18206004		Infineon Technologies AGTrans IGBT Module N-CH 1200V 35A 210000mW 24-Pin Tray
RoHS: Compliant		7
  • 1:$74.8900
FP35R12KT4B15BOSA1
DISTI # FP35R12KT4B15BOSA1-ND		Infineon Technologies AGIGBT MODULE VCES 1200V 35A
RoHS: Not compliant
Min Qty: 10
Container: Bulk		Temporarily Out of Stock
  • 10:$77.8190
FP35R12KT4B15BOSA1
DISTI # 26198751		Infineon Technologies AGTrans IGBT Module N-CH 1200V 35A 210000mW 24-Pin Tray
RoHS: Compliant		7
  • 1:$74.8900
FP35R12KT4B15BOSA1
DISTI # FP35R12KT4B15BOSA1		Infineon Technologies AGLOW POWER ECONO - Trays (Alt: FP35R12KT4B15BOSA1)
RoHS: Compliant
Min Qty: 10
Container: Tray		Americas - 0
  • 10:$74.6900
  • 20:$71.9900
  • 40:$69.3900
  • 60:$67.0900
  • 100:$65.8900
FP35R12KT4B15BOSA1
DISTI # 12AC9629		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 35A,Transistor Polarity:N Channel,DC Collector Current:35A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:210W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes7
  • 1:$77.8200
FP35R12KT4_B15
DISTI # 641-FP35R12KT4_B15		Infineon Technologies AGIGBT Modules IGBT 1200V 35A
RoHS: Compliant		7
  • 1:$83.0400
  • 5:$81.5200
  • 10:$77.8500
  • 25:$75.2600
FP35R12KT4B15BOSA1
DISTI # 2709964		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 35A
RoHS: Compliant		8
  • 1:$127.5800
  • 2:$123.0200
  • 5:$118.7800
FP35R12KT4B15BOSA1
DISTI # 2709964		Infineon Technologies AGIGBT, MODULE, N-CH, 1.2KV, 35A
RoHS: Compliant		7
  • 1:£76.0900
  • 5:£74.5700
  • 10:£73.0500
FP35R12KT4B15BOSA1
DISTI # C1S322000681600		Infineon Technologies AGTrans IGBT Module N-CH 1200V 35A 210000mW 24-Pin ECONO2-5 Tray
RoHS: Compliant		7
  • 1:$77.5300
Bild Teil # Beschreibung
FP35R12KT3

Mfr.#: FP35R12KT3

OMO.#: OMO-FP35R12KT3-1190

 Neu und Original
FP35R12KT4-B11

Mfr.#: FP35R12KT4-B11

OMO.#: OMO-FP35R12KT4-B11-1190

 Neu und Original
FP35R12KT4-B15

Mfr.#: FP35R12KT4-B15

OMO.#: OMO-FP35R12KT4-B15-1190

 Neu und Original
FP35R12KT4-B16

Mfr.#: FP35R12KT4-B16

OMO.#: OMO-FP35R12KT4-B16-1190

 Neu und Original
FP35R12KT4B11BOSA1

Mfr.#: FP35R12KT4B11BOSA1

OMO.#: OMO-FP35R12KT4B11BOSA1-INFINEON-TECHNOLOGIES

 IGBT MODULE VCES 1200V 35A
FP35R12KT4_B11

Mfr.#: FP35R12KT4_B11

OMO.#: OMO-FP35R12KT4-B11-125

 IGBT Modules IGBT-MODULE
FP35R12KT4_B15

Mfr.#: FP35R12KT4_B15

OMO.#: OMO-FP35R12KT4-B15-125

 IGBT Modules IGBT 1200V 35A
FP35R12KT4

Mfr.#: FP35R12KT4

OMO.#: OMO-FP35R12KT4-125

 IGBT Modules IGBT-MODULE
FP35R12KT4B16BOSA1

Mfr.#: FP35R12KT4B16BOSA1

OMO.#: OMO-FP35R12KT4B16BOSA1-INFINEON-TECHNOLOGIES

 MOD IGBT LOW PWR ECONO2-4
FP35R12KT4PBPSA1

Mfr.#: FP35R12KT4PBPSA1

OMO.#: OMO-FP35R12KT4PBPSA1-INFINEON-TECHNOLOGIES

 Trench Field stop IGBT4 and Emitter Controlled diode
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4500
Menge eingeben:
Der aktuelle Preis von FP35R12KT4B15BOSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
98,84 $
98,84 $
10
93,89 $
938,93 $
100
88,95 $
8 895,15 $
500
84,01 $
42 004,90 $
1000
79,07 $
79 068,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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