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IRFB33N15DPBF

IRFB33N15DPBF
Mfr. #:
IRFB33N15DPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB33N15DPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFB33N15DPBF DatasheetIRFB33N15DPBF Datasheet (P4-P6)IRFB33N15DPBF Datasheet (P7-P9)IRFB33N15DPBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
33 A
Rds On - Drain-Source-Widerstand:
56 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
60 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
3.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
15.65 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Typ:
Smps-MOSFET
Breite:
4.4 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
14 S
Abfallzeit:
21 ns
Produktart:
MOSFET
Anstiegszeit:
38 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
23 ns
Typische Einschaltverzögerungszeit:
13 ns
Teil # Aliase:
SP001566470
Gewichtseinheit:
0.211644 oz
Tags
IRFB33N15DP, IRFB33N, IRFB33, IRFB3, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 33 A, 150 V, 3-Pin TO-220 Infineon IRFB33N15DPBF
***ure Electronics
Single N-Channel 150 V 56 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3
***ernational Rectifier
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
***ical
Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-220AB
***ied Electronics & Automation
MOSFET, 150V, 33A, 56 MOHM, 60 NC QG, TO-220AB
***th Star Micro
MOSFET N-CH 150V 33A TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):56mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***nell
MOSFET, N, 150V, 33A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:33A; Resistance, Rds On:0.056ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:130A; Power Dissipation:170W; Power, Pd:170W; Resistance, Rds on @ Vgs = 10V:56ohm; Thermal Resistance, Junction to Case A:0.9°C/W; Voltage, Vds Max:150V
***ment14 APAC
N CH MOSFET, 150V, 33A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:56ohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:130A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IRFB33N15DPBF
DISTI # 23822492		Infineon Technologies AGTrans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		890
  • 500:$0.6725
  • 250:$0.6864
  • 100:$0.7056
  • 25:$0.8688
IRFB33N15DPBF
DISTI # IRFB33N15DPBF-ND		Infineon Technologies AGMOSFET N-CH 150V 33A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		229In Stock
  • 1000:$0.9969
  • 500:$1.2031
  • 100:$1.5469
  • 10:$1.9250
  • 1:$2.1300
IRFB33N15DPBF
DISTI # C1S322000488429		Infineon Technologies AGTrans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		890
  • 500:$1.2000
  • 100:$1.3100
  • 25:$1.5900
  • 5:$1.9700
IRFB33N15DPBF
DISTI # IRFB33N15DPBF		Infineon Technologies AGTrans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRFB33N15DPBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.7199
  • 5000:$0.6939
  • 8000:$0.6689
  • 15000:$0.6459
  • 30000:$0.6349
IRFB33N15DPBF
DISTI # SP001566470		Infineon Technologies AGTrans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-220AB (Alt: SP001566470)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.1499
  • 10:€1.0219
  • 25:€0.9199
  • 50:€0.8359
  • 100:€0.7659
  • 500:€0.7069
  • 1000:€0.6569
IRFB33N15DPBF
DISTI # 63J6715		Infineon Technologies AGN CHANNEL MOSFET, 150V, 33A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:33A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,MSL:- RoHS Compliant: Yes2131
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9070
  • 2500:$0.8440
  • 5000:$0.8130
IRFB33N15DPBF
DISTI # 70018289		Infineon Technologies AGIRFB33N15DPBF N-channel MOSFET Transistor,33 A,150 V,3-Pin TO-220
RoHS: Compliant		0
  • 3000:$3.2800
IRFB33N15DPBFInternational RectifierPower Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		515
  • 1000:$0.8300
  • 500:$0.8700
  • 100:$0.9100
  • 25:$0.9500
  • 1:$1.0200
IRFB33N15DPBF
DISTI # 942-IRFB33N15DPBF		Infineon Technologies AGMOSFET 150V 1 N-CH HEXFET 56mOhms 60nC
RoHS: Compliant		3470
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 500:$1.1000
  • 1000:$0.9070
  • 2000:$0.8440
  • 5000:$0.8130
  • 10000:$0.7820
IRFB33N15DPBF
DISTI # 9075081P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 150V 33A TO220AB, TU2625
  • 25:£0.5940
IRFB33N15DPBFInternational Rectifier 
RoHS: Compliant		Europe - 100
    IRFB33N15DPBF
    DISTI # 8657947    		Infineon Technologies AGMOSFET, N, 150V, 33A, TO-220
    RoHS: Compliant    		2134
    • 1:$2.9100
    • 10:$2.4900
    • 100:$1.9800
    • 500:$1.7500
    • 1000:$1.4400
    • 2000:$1.4100
    IRFB33N15DPBF
    DISTI # XSLY00000000910    		INFINEON/IRTO-220AB
    RoHS: Compliant    		1116
    • 950:$0.7571
    • 1116:$0.7067
    IRFB33N15DPBF
    DISTI # 8657947    		Infineon Technologies AGMOSFET, N, 150V, 33A, TO-220
    RoHS: Compliant    		2156
    • 1:£0.8580
    • 10:£0.7050
    • 100:£0.7040
    • 250:£0.7030
    • 500:£0.7020
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von IRFB33N15DPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,83 $
    1,83 $
    10
    1,56 $
    15,60 $
    100
    1,25 $
    125,00 $
    500
    1,09 $
    545,00 $
    1000
    0,91 $
    907,00 $
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