NE3512S02-A

NE3512S02-A
Mfr. #:
NE3512S02-A
Hersteller:
CEL
Beschreibung:
RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NE3512S02-A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
CEL
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Montageart
SMD/SMT
Paket-Koffer
S0-2
Technologie
GaAs
Transistor-Typ
HFET
Gewinnen
13.5 dB
Pd-Verlustleistung
165 mW
Maximale-Betriebstemperatur
+ 125 C
Arbeitsfrequenz
12 GHz
ID-Dauer-Drain-Strom
70 mA
Vds-Drain-Source-Breakdown-Voltage
4 V
Transistor-Polarität
N-Kanal
Vorwärts-Transkonduktanz-Min
55 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
Gate-Source-Cutoff-Spannung
4 V
NF-Geräusch-Abbildung
0.35 dB
Tags
NE3512, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans JFET N-CH 4V 70mA 4-Pin Micro-X
***i-Key
HJ-FET NCH 13.5DB S02
Teil # Mfg. Beschreibung Aktie Preis
NE3512S02-A
DISTI # NE3512S02-A-ND
California Eastern Laboratories (CEL)HJ-FET NCH 13.5DB S02
RoHS: Compliant
Min Qty: 90
Container: Bulk
Limited Supply - Call
    NE3512S02-A
    DISTI # 551-NE3512S02-A
    California Eastern Laboratories (CEL)RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
      NE3512S02-A

      Mfr.#: NE3512S02-A

      OMO.#: OMO-NE3512S02-A

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      OMO.#: OMO-NE3514S02-T1C-A-CEL

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      Mfr.#: NE3515S02-T1C-A

      OMO.#: OMO-NE3515S02-T1C-A-CEL

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      NE3512S02-T1C-A

      Mfr.#: NE3512S02-T1C-A

      OMO.#: OMO-NE3512S02-T1C-A-CEL

      RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
      NE3512S02-T1D-AJT

      Mfr.#: NE3512S02-T1D-AJT

      OMO.#: OMO-NE3512S02-T1D-AJT-1190

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      Mfr.#: NE3512S02-T1

      OMO.#: OMO-NE3512S02-T1-1190

      Neu und Original
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      OMO.#: OMO-NE3512S02-T1D-1190

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      OMO.#: OMO-NE3513M04-1190

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      OMO.#: OMO-NE3513M04-T2B-A-CEL

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      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von NE3512S02-A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,68 $
      0,68 $
      10
      0,64 $
      6,43 $
      100
      0,61 $
      60,89 $
      500
      0,58 $
      287,50 $
      1000
      0,54 $
      541,20 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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