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STGW40H120F2

STGW40H120F2
Mfr. #:
STGW40H120F2
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGW40H120F2 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGW40H120F2 Mehr Informationen STGW40H120F2 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.1 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
468 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
STGW40H120F2
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
80 A
Marke:
STMicroelectronics
Gate-Emitter-Leckstrom:
250 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
600
Unterkategorie:
IGBTs
Gewichtseinheit:
1.340411 oz
Tags
STGW40H1, STGW40H, STGW40, STGW4, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***va Crawler
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
***et Europe
Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube
***ronik
IGBT 1200V 80A 2.1V TO247
***i-Key
IGBT 1200V 40A HS TO-247
***ark
Ptd High Voltage
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Teil # Mfg. Beschreibung Aktie Preis
STGW40H120F2
DISTI # 30608731		STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 80A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		5
  • 4:$6.6428
STGW40H120F2
DISTI # 497-14716-5-ND		STMicroelectronicsIGBT 1200V 40A HS TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 510:$6.6727
  • 120:$7.6629
  • 30:$8.8253
  • 10:$9.2560
  • 1:$10.2500
STGW40H120F2
DISTI # STGW40H120F2		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube (Alt: STGW40H120F2)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€4.3900
  • 500:€4.7900
  • 100:€4.8900
  • 50:€5.0900
  • 25:€5.2900
  • 10:€5.5900
  • 1:€6.0900
STGW40H120F2
DISTI # STGW40H120F2		STMicroelectronicsTrans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW40H120F2)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 6000:$5.1900
  • 3000:$5.2900
  • 1800:$5.4900
  • 1200:$5.7900
  • 600:$6.0900
STGW40H120F2
DISTI # 79X6451		STMicroelectronicsPTD HIGH VOLTAGE0
  • 500:$5.3300
  • 250:$5.5000
  • 100:$6.5600
  • 50:$7.0600
  • 25:$7.5500
  • 10:$8.2900
  • 1:$9.2300
STGW40H120F2
DISTI # 511-STGW40H120F2		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
RoHS: Compliant		1
  • 1:$9.7500
  • 10:$8.8100
  • 25:$8.4000
  • 100:$7.2900
  • 250:$6.9700
  • 500:$6.3500
  • 1000:$5.5300
Bild Teil # Beschreibung
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Mfr.#: SN65HVD75DR

OMO.#: OMO-SN65HVD75DR

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Mfr.#: SN74ALB16244DGGR

OMO.#: OMO-SN74ALB16244DGGR

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ES1D

Mfr.#: ES1D

OMO.#: OMO-ES1D

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IRLML6402TRPBF

Mfr.#: IRLML6402TRPBF

OMO.#: OMO-IRLML6402TRPBF

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RC0603FR-071KL

Mfr.#: RC0603FR-071KL

OMO.#: OMO-RC0603FR-071KL

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CC0805KRX7R9BB104

Mfr.#: CC0805KRX7R9BB104

OMO.#: OMO-CC0805KRX7R9BB104

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IRLML6402TRPBF

Mfr.#: IRLML6402TRPBF

OMO.#: OMO-IRLML6402TRPBF-INFINEON-TECHNOLOGIES

 MOSFET P-CH 20V 3.7A SOT-23
SN65HVD75DR

Mfr.#: SN65HVD75DR

OMO.#: OMO-SN65HVD75DR-TEXAS-INSTRUMENTS

 RS-485 Interface IC 3.3V-Supply RS-485 with IEC ESD Prot
SN74ALB16244DGGR

Mfr.#: SN74ALB16244DGGR

OMO.#: OMO-SN74ALB16244DGGR-TEXAS-INSTRUMENTS

 Buffers & Line Drivers 16bit
ES1D

Mfr.#: ES1D

OMO.#: OMO-ES1D-ON-SEMICONDUCTOR

 DIODE GEN PURP 200V 1A SMA
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von STGW40H120F2 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
9,75 $
9,75 $
10
8,81 $
88,10 $
25
8,40 $
210,00 $
100
7,29 $
729,00 $
250
6,97 $
1 742,50 $
500
6,35 $
3 175,00 $
1000
5,53 $
5 530,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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