IRGPS60B120KDP

IRGPS60B120KDP
Mfr. #:
IRGPS60B120KDP
Hersteller:
Infineon / IR
Beschreibung:
IGBT Transistors 1200V UltraFast 5-40kHz
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRGPS60B120KDP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRGPS60B120KDP DatasheetIRGPS60B120KDP Datasheet (P4-P6)IRGPS60B120KDP Datasheet (P7-P9)IRGPS60B120KDP Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:
IRGPS60B120KDP Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-274-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1.2 kV
Kollektor-Emitter-Sättigungsspannung:
2.33 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
105 A
Pd - Verlustleistung:
595 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
120 A
Höhe:
20.3 mm
Länge:
15.6 mm
Breite:
5 mm
Marke:
Infineon / IR
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
25
Unterkategorie:
IGBTs
Teil # Aliase:
SP001540752
Gewichtseinheit:
0.223990 oz
Tags
IRGPS60B120KDP, IRGPS60, IRGPS6, IRGPS, IRGP, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRGPS60B120KDP
DISTI # IRGPS60B120KDP-ND
Infineon Technologies AGIGBT 1200V 105A 595W SUPER247
RoHS: Compliant
Min Qty: 1
Container: Tube
597In Stock
  • 100:$17.7220
  • 25:$19.8208
  • 1:$22.5000
IRGPS60B120KDP
DISTI # SP001540752
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 105A 3-Pin(3+Tab) TO-274AA (Alt: SP001540752)
RoHS: Compliant
Min Qty: 1
Europe - 175
  • 1:€15.4900
  • 10:€14.1900
  • 25:€13.5900
  • 50:€13.0900
  • 100:€12.5900
  • 500:€12.1900
  • 1000:€11.2900
IRGPS60B120KDP
DISTI # IRGPS60B120KDP
Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 105A 3-Pin(3+Tab) TO-274AA - Rail/Tube (Alt: IRGPS60B120KDP)
RoHS: Compliant
Min Qty: 1
Container: Tube
Americas - 0
  • 1:$15.9900
  • 10:$15.7900
  • 25:$15.5900
  • 50:$15.3900
  • 100:$14.7900
  • 500:$14.2900
  • 1000:$14.0900
IRGPS60B120KDP
DISTI # 45P3460
Infineon Technologies AGIGBT Single Transistor, 105 A, 2.75 V, 595 W, 1.2 kV, TO-274AA, 3 RoHS Compliant: Yes65
  • 100:$16.8800
  • 50:$17.8800
  • 25:$18.8800
  • 10:$19.7700
  • 1:$21.4300
IRGPS60B120KDP.
DISTI # 27AC6925
Infineon Technologies AGDC Collector Current:105A,Collector Emitter Saturation Voltage Vce(on):2.75V,Power Dissipation Pd:595W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:IRGP Series,MSL:- RoHS Compliant: Yes0
  • 100:$16.8800
  • 50:$17.8800
  • 25:$18.8800
  • 10:$19.7700
  • 1:$21.4300
IRGPS60B120KDP
DISTI # 70411655
Infineon Technologies AGIRGPS60B120KDP,IGBT Transistor,105 A 1200 V,3-Pin TO-274AA
RoHS: Compliant
0
  • 1:$26.5400
IRGPS60B120KDP
DISTI # 942-IRGPS60B120KDP
Infineon Technologies AGIGBT Transistors 1200V UltraFast 5-40kHz
RoHS: Compliant
227
  • 1:$21.4200
  • 5:$21.2000
  • 10:$19.7600
  • 25:$18.8700
  • 100:$16.8700
  • 250:$16.1000
  • 500:$15.3200
IRGPS60B120KDP
DISTI # 9128693
Infineon Technologies AGIGBT N-CH 1200V 105A DIODE SUPER247, TU225
  • 50:£12.7990
  • 25:£13.0600
IRGPS60B120KDP
DISTI # 7840313
Infineon Technologies AGIGBT N-CH 1200V 105A DIODE SUPER247, EA16
  • 10:£14.1500
  • 1:£15.4100
IRGPS60B120KDP
DISTI # 7840313P
Infineon Technologies AGIGBT N-CH 1200V 105A DIODE SUPER247, TU300
  • 10:£14.1500
IRGPS60B120KDP
DISTI # IRGPS60B120KDP
Infineon Technologies AGTransistor: IGBT,1200V,120A,595W,SUPER24725
  • 1:$20.7200
  • 3:$19.0200
  • 10:$15.0600
  • 25:$14.0900
IRGPS60B120KDP
DISTI # 1688567
Infineon Technologies AGIGBT, W/DIODE, 1200V, 105A, SUPER247
RoHS: Compliant
65
  • 100:£11.6400
  • 50:£12.1600
  • 10:£12.4100
  • 5:£13.5300
  • 1:£15.4100
IRGPS60B120KDP
DISTI # 1688567
Infineon Technologies AGIGBT, W/DIODE, 1200V, 105A, SUPER247
RoHS: Compliant
65
  • 100:$26.7200
  • 25:$29.8800
  • 10:$31.2800
  • 5:$33.5600
  • 1:$33.9200
Bild Teil # Beschreibung
LM393F-GE2

Mfr.#: LM393F-GE2

OMO.#: OMO-LM393F-GE2

Analog Comparators Grd Sense Comprtr SOP8 3-32V
STF27N60M2-EP

Mfr.#: STF27N60M2-EP

OMO.#: OMO-STF27N60M2-EP

MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power MOSFET in a TO-220FP package
2N7002

Mfr.#: 2N7002

OMO.#: OMO-2N7002

MOSFET N-CHANNEL 60V 115mA
B32671L9472K000

Mfr.#: B32671L9472K000

OMO.#: OMO-B32671L9472K000

Film Capacitors 0.047uF 10% 1kV 250Vrms
HMK212BC7105KGHTE

Mfr.#: HMK212BC7105KGHTE

OMO.#: OMO-HMK212BC7105KGHTE

Multilayer Ceramic Capacitors MLCC - SMD/SMT FACTORY NOT ACCEPTING ORDERS
LM393F-GE2

Mfr.#: LM393F-GE2

OMO.#: OMO-LM393F-GE2-ROHM-SEMI

GROUND SENSE COMPARATOR
STF27N60M2-EP

Mfr.#: STF27N60M2-EP

OMO.#: OMO-STF27N60M2-EP-STMICROELECTRONICS

MOSFET N-CH 600V 20A TO-220FP
SN74HC132ANSR

Mfr.#: SN74HC132ANSR

OMO.#: OMO-SN74HC132ANSR-TEXAS-INSTRUMENTS

LOGIC GATES AND INVERTERS
2N7002

Mfr.#: 2N7002

OMO.#: OMO-2N7002-ON-SEMICONDUCTOR

MOSFET N-CH 60V 115MA SOT-23
HMK212BC7105KGHTE

Mfr.#: HMK212BC7105KGHTE

OMO.#: OMO-HMK212BC7105KGHTE-TAIYO-YUDEN

CAP CER 1UF 100V X7S 0805
Verfügbarkeit
Aktie:
183
Auf Bestellung:
2166
Menge eingeben:
Der aktuelle Preis von IRGPS60B120KDP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
21,42 $
21,42 $
5
21,20 $
106,00 $
10
19,76 $
197,60 $
25
18,87 $
471,75 $
100
16,87 $
1 687,00 $
250
16,10 $
4 025,00 $
500
15,32 $
7 660,00 $
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