IPA60R299CP

IPA60R299CP
Mfr. #:
IPA60R299CP
Hersteller:
Infineon Technologies
Beschreibung:
Darlington Transistors MOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPA60R299CP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPA60R299CP Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
INFINEON
Produktkategorie
FETs - Einzeln
Serie
CoolMOS CP
Verpackung
Rohr
Teil-Aliasnamen
IPA60R299CPXK IPA60R299CPXKSA1 SP000096438
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Handelsname
CoolMOS
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
33 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
5 ns
Anstiegszeit
5 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
11 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Rds-On-Drain-Source-Widerstand
299 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
40 ns
Typische-Einschaltverzögerungszeit
10 ns
Qg-Gate-Ladung
22 nC
Kanal-Modus
Erweiterung
Tags
IPA60R299C, IPA60R29, IPA60R2, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 50, N-Channel MOSFET, 11 A, 650 V, 3-Pin TO-220FP Infineon IPA60R299CPXKSA1
***ure Electronics
Single N-Channel 600 V 299 mOhm 22 nC CoolMOS™ Power Mosfet - TO-220-3-FP
***p One Stop Global
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
***et
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP
***et Europe
Trans MOSFET N-CH 650V 11A 3-Pin TO-220FP Tube
***i-Key
MOSFET N-CH 600V 11A TO220-3
***ark
MOSFET, N, TO-220; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:11A; On State Resistance:0.299ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:650V; On Resistance Rds(on):299mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:33W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-220; Power Dissipation Pd:33W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
***nell
MOSFET, N, TO-220; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:11A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.299ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:33W; Rodzaj obudowy tranzystora:TO-220; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:-; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:11A; Napięcie Vds, typ.:650V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Rodzaj tranzystora:Mocy MOSFET; Temperatura robocza, min.:-55°C; Typ zakończenia:Przewlekane; Zakres temperatury roboczej:-55°C do +150°C
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPA60R299CPXKSA1
DISTI # V99:2348_06378234
Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
490
  • 500:$1.5340
  • 100:$1.7300
  • 10:$2.0910
  • 1:$2.4020
IPA60R299CPXKSA1
DISTI # IPA60R299CPXKSA1-ND
Infineon Technologies AGMOSFET N-CH 600V 11A TO220-3
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
  • 500:$1.8467
IPA60R299CPXKSA1
DISTI # 26197400
Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
RoHS: Compliant
490
  • 100:$1.7300
  • 10:$2.0910
  • 5:$2.4020
IPA60R299CP
DISTI # 30600910
Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP
RoHS: Compliant
250
  • 50:$1.0480
IPA60R299CP
DISTI # SP000096438
Infineon Technologies AGTrans MOSFET N-CH 650V 11A 3-Pin TO-220FP Tube (Alt: SP000096438)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€1.6900
  • 10:€1.2900
  • 25:€1.1900
  • 50:€1.1900
  • 100:€1.1900
  • 500:€1.1900
  • 1000:€1.0900
IPA60R299CPXK
DISTI # IPA60R299CPXKSA1
Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA60R299CPXKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.2900
  • 1000:$1.2900
  • 2000:$1.1900
  • 3000:$1.1900
  • 5000:$1.1900
IPA60R299CPInfineon Technologies AGPower Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
19000
  • 1000:$1.1600
  • 500:$1.2200
  • 100:$1.2700
  • 25:$1.3200
  • 1:$1.4300
IPA60R299CPXKInfineon Technologies AG 
RoHS: Not Compliant
120
  • 1000:$1.2600
  • 500:$1.3300
  • 100:$1.3800
  • 25:$1.4400
  • 1:$1.5600
IPA60R299CPXKSA1Infineon Technologies AGPower Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
570499
  • 1000:$1.2900
  • 500:$1.3600
  • 100:$1.4100
  • 25:$1.4700
  • 1:$1.5900
IPA60R299CPXKSA1International RectifierPower Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant
15500
  • 1000:$1.1600
  • 500:$1.2200
  • 100:$1.2700
  • 25:$1.3200
  • 1:$1.4300
IPA60R299CP
DISTI # 726-IPA60R299CP
Infineon Technologies AGMOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP
RoHS: Compliant
259
  • 1:$2.5900
  • 10:$2.2000
  • 100:$1.7600
IPA60R299CPXKSA1
DISTI # 726-IPA60R299CPXKSA1
Infineon Technologies AGMOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP
RoHS: Compliant
490
  • 1:$2.8300
  • 10:$2.4000
  • 100:$1.9200
IPA60R299CPXK
DISTI # 726-IPA60R299CPXK
Infineon Technologies AGMOSFET N-Ch 600V 11A TO220FP-3 CoolMOS CP
RoHS: Compliant
500
  • 1:$2.8300
  • 10:$2.4000
  • 100:$1.9200
  • 500:$1.6800
IPA60R299CPXKSA1
DISTI # 8977232P
Infineon Technologies AGMOSFET N-CHANNEL 600V 11A COOLMOS TO220, TU400
  • 20:£1.6100
  • 80:£1.4500
  • 200:£1.2930
  • 400:£1.2680
IPA60R299CPInfineon Technologies AG 25
    IPA60R299CPXKInfineon Technologies AG 800
      IPA60R299CP
      DISTI # C1S322000081022
      Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
      RoHS: Compliant
      250
      • 50:$0.8220
      IPA60R299CPXKSA1
      DISTI # C1S322000464915
      Infineon Technologies AGTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
      RoHS: Compliant
      490
      • 100:$1.7300
      • 10:$2.0910
      • 1:$2.4020
      Bild Teil # Beschreibung
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      OMO.#: OMO-IPA60R360P7SE8228XKSA1-INFINEON-TECHNOLOGIES

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      OMO.#: OMO-IPA60R160P6-1190

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      IPA60R125CP  6R125P

      Mfr.#: IPA60R125CP 6R125P

      OMO.#: OMO-IPA60R125CP-6R125P-1190

      Neu und Original
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      Mfr.#: IPA60R190E6(6R190E6)

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      Mfr.#: IPA60R199CP

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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von IPA60R299CP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,23 $
      1,23 $
      10
      1,17 $
      11,71 $
      100
      1,11 $
      110,97 $
      500
      1,05 $
      524,05 $
      1000
      0,99 $
      986,40 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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