IXFX48N60P

IXFX48N60P
Mfr. #:
IXFX48N60P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 600V 48A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFX48N60P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFX48N60P DatasheetIXFX48N60P Datasheet (P4)
ECAD Model:
Mehr Informationen:
IXFX48N60P Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
48 A
Rds On - Drain-Source-Widerstand:
135 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
830 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Höhe:
21.34 mm
Länge:
16.13 mm
Serie:
IXFX48N60
Transistortyp:
1 N-Channel
Breite:
5.21 mm
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
53 S
Abfallzeit:
22 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
85 ns
Typische Einschaltverzögerungszeit:
30 ns
Gewichtseinheit:
0.257500 oz
Tags
IXFX48, IXFX4, IXFX, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 135 mOhm 830 W Power Mosfet - PLUS247
***ical
Trans MOSFET N-CH 600V 48A 3-Pin(3+Tab) PLUS 247
***i-Key
MOSFET N-CH 600V 48A PLUS247-3
***inecomponents.com
MOSFETS W/FAST INTRINSIC DIODE
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFX48N60P
DISTI # 30709997
IXYS CorporationTrans MOSFET N-CH 600V 48A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant
60
  • 1000:$7.8336
  • 500:$8.5824
  • 250:$9.4560
  • 100:$10.3200
  • 50:$10.5792
  • 25:$11.4912
  • 10:$12.4320
  • 2:$13.6704
IXFX48N60P
DISTI # IXFX48N60P-ND
IXYS CorporationMOSFET N-CH 600V 48A PLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$11.4570
IXFX48N60P
DISTI # C1S331700009247
IXYS CorporationTrans MOSFET N-CH 600V 48A 3-Pin(3+Tab) PLUS 247
RoHS: Compliant
60
  • 50:$12.8000
  • 10:$14.0000
  • 5:$17.0000
  • 1:$19.1000
IXFX48N60P
DISTI # 747-IXFX48N60P
IXYS CorporationMOSFET 600V 48A
RoHS: Compliant
8
  • 1:$14.2400
  • 10:$12.9500
  • 25:$11.9700
  • 50:$11.0200
  • 100:$10.7500
  • 250:$9.8500
  • 500:$8.9400
IXFX48N60PIXYS CorporationMOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)2405
  • 439:$8.4500
  • 207:$9.1260
  • 1:$16.9000
IXFX48N60P  438
    Bild Teil # Beschreibung
    IXFT30N50P

    Mfr.#: IXFT30N50P

    OMO.#: OMO-IXFT30N50P

    MOSFET 500V 30A
    0215015.MXEP

    Mfr.#: 0215015.MXEP

    OMO.#: OMO-0215015-MXEP-LITTELFUSE

    Cartridge Fuses 5x20 PGT TL HBC 250V 15A
    IXFT30N50P

    Mfr.#: IXFT30N50P

    OMO.#: OMO-IXFT30N50P-IXYS-CORPORATION

    MOSFET 500V 30A
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1991
    Menge eingeben:
    Der aktuelle Preis von IXFX48N60P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    14,24 $
    14,24 $
    10
    12,95 $
    129,50 $
    25
    11,97 $
    299,25 $
    50
    11,02 $
    551,00 $
    100
    10,75 $
    1 075,00 $
    250
    9,85 $
    2 462,50 $
    500
    8,94 $
    4 470,00 $
    1000
    8,16 $
    8 160,00 $
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