FGB40T65SPD-F085

FGB40T65SPD-F085
Mfr. #:
FGB40T65SPD-F085
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
IGBT Transistors Trench IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FGB40T65SPD-F085 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
FGB40T65SPD-F085 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-263-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
2.9 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
80 A
Pd - Verlustleistung:
267 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
FGB40T65SPD
Qualifikation:
AEC-Q101
Verpackung:
Spule
Kontinuierlicher Kollektorstrom Ic Max:
80 A
Marke:
ON Semiconductor / Fairchild
Gate-Emitter-Leckstrom:
+/- 400 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
800
Unterkategorie:
IGBTs
Teil # Aliase:
FGB40T65SPD_F085
Gewichtseinheit:
0.046296 oz
Tags
FGB40T, FGB40, FGB4, FGB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 80A 267000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***Semiconductor
IGBT, 650V, 40A Field Stop Trench
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-263 T/R
***nell
IGBT, AEC-Q101, N-CH, 650V, 80A, TO263AB
***ark
Igbt, 650V, 80A, 175Deg C, 267W; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:267W; Collector Emitter Voltage V(Br)Ceo:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes
FGB40T65SP_F085 650V 40A Field Stop Trench IGBT
ON Semiconductor FGB40T65SP_F085 650V 40A Field Stop Trench IGBT uses the novel field stop 3rd generation IGBT technology and offers the optimum performance with low conduction loss and switching loss. The IGBT can be used for high efficiency operation in various applications, while providing 50V higher blocking voltage and rugged high current switching reliability. This FGB40T65SP_F085 also offers outstanding performance in parallel operation.
Teil # Mfg. Beschreibung Aktie Preis
FGB40T65SPD_F085
DISTI # V72:2272_17091667
ON Semiconductor650V GEN3 FS Trench IGBT240
  • 100:$2.5800
  • 25:$2.9169
  • 10:$2.9740
  • 1:$3.8445
FGB40T65SPD_F085
DISTI # V36:1790_17091667
ON Semiconductor650V GEN3 FS Trench IGBT0
  • 800000:$1.2960
  • 400000:$1.2980
  • 80000:$1.4880
  • 8000:$1.8100
  • 800:$1.8640
FGB40T65SPD-F085
DISTI # FGB40T65SPD-F085CT-ND
ON SemiconductorIGBT FIELD STOP 650V 80A D2PAK
RoHS: Not compliant
Min Qty: 1
Container: Cut Tape (CT)
798In Stock
  • 100:$2.2551
  • 10:$2.7520
  • 1:$3.0600
FGB40T65SPD-F085
DISTI # FGB40T65SPD-F085DKR-ND
ON SemiconductorIGBT FIELD STOP 650V 80A D2PAK
RoHS: Not compliant
Min Qty: 1
Container: Digi-Reel®
798In Stock
  • 100:$2.2551
  • 10:$2.7520
  • 1:$3.0600
FGB40T65SPD-F085
DISTI # FGB40T65SPD-F085TR-ND
ON SemiconductorIGBT FIELD STOP 650V 80A D2PAK
RoHS: Not compliant
Min Qty: 800
Container: Tape & Reel (TR)
On Order
  • 2400:$1.4970
  • 1600:$1.5719
  • 800:$1.8638
FGB40T65SPD_F085
DISTI # 32711890
ON Semiconductor650V GEN3 FS Trench IGBT800
  • 800:$1.7744
FGB40T65SPD_F085
DISTI # 31628562
ON Semiconductor650V GEN3 FS Trench IGBT240
  • 4:$3.8445
FGB40T65SPD-F085
DISTI # FGB40T65SPD-F085
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: FGB40T65SPD-F085)
RoHS: Compliant
Min Qty: 800
Container: Reel
Americas - 0
  • 800:$1.2900
  • 1600:$1.2900
  • 3200:$1.2900
  • 4800:$1.2900
  • 8000:$1.2900
FGB40T65SPD-F085
DISTI # FGB40T65SPD-F085
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-263 T/R (Alt: FGB40T65SPD-F085)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 8000:€1.1900
  • 4800:€1.2900
  • 3200:€1.3900
  • 1600:€1.4900
  • 800:€1.7900
FGB40T65SPD-F085
DISTI # FGB40T65SPD-F085
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin TO-263 T/R (Alt: FGB40T65SPD-F085)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Asia - 0
  • 40000:$1.7530
  • 20000:$1.7822
  • 8000:$1.8436
  • 4000:$1.9095
  • 2400:$1.9802
  • 1600:$2.0564
  • 800:$2.1386
FGB40T65SPD-F085
DISTI # 15AC8268
ON SemiconductorIGBT, AEC-Q101, N-CH, 650V, 80A, TO263AB,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:267W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-263AB,No. of RoHS Compliant: Yes16
  • 500:$2.5500
  • 250:$2.8200
  • 100:$2.9500
  • 50:$3.0800
  • 25:$3.2200
  • 10:$3.3500
  • 1:$3.8800
FGB40T65SPD-F085
DISTI # 48AC1085
ON SemiconductorFS3 T TO263 20A 600V AUTO / REEL0
  • 1000:$2.4200
  • 500:$2.5700
  • 250:$2.7500
  • 100:$2.9900
  • 1:$3.6300
FGB40T65SPD_F085
DISTI # 24AC8571
ON Semiconductor650V GEN3 FS TRENCH IGBT / TAPE REEL0
  • 30000:$1.8900
  • 18000:$1.9200
  • 12000:$1.9900
  • 6000:$2.1500
  • 3000:$2.3000
  • 1:$2.4100
FGB40T65SPD-F085
DISTI # 512-FGB40T65SPD_F085
ON SemiconductorIGBT Transistors Trench IGBT
RoHS: Compliant
5694
  • 1:$2.8300
  • 10:$2.4100
  • 100:$2.0900
  • 250:$1.9800
  • 500:$1.7600
FGB40T65SPD-F085
DISTI # 2748777
ON SemiconductorIGBT, AEC-Q101, N-CH, 650V, 80A, TO263AB
RoHS: Compliant
16
  • 100:$3.9800
  • 10:$4.6100
  • 1:$5.4100
FGB40T65SPD-F085
DISTI # 2748777
ON SemiconductorIGBT, AEC-Q101, N-CH, 650V, 80A, TO263AB236
  • 500:£1.6800
  • 250:£1.8800
  • 100:£1.9700
  • 10:£2.2800
  • 1:£3.0100
Bild Teil # Beschreibung
TLV9062IDSGR

Mfr.#: TLV9062IDSGR

OMO.#: OMO-TLV9062IDSGR

Operational Amplifiers - Op Amps OP AMP
IKB40N65ES5ATMA1

Mfr.#: IKB40N65ES5ATMA1

OMO.#: OMO-IKB40N65ES5ATMA1

IGBT Transistors 40A 650V TRENCHSTOP 5 medium speed S5 IGBT copacked with 40A Rapid 1 diode
IKB40N65EF5ATMA1

Mfr.#: IKB40N65EF5ATMA1

OMO.#: OMO-IKB40N65EF5ATMA1

IGBT Transistors 40A 650V TRENCHSTOP 5 ultra fast F5 IGBT copacked with 40A Rapid 1 diode
FGB20N60SFD-F085

Mfr.#: FGB20N60SFD-F085

OMO.#: OMO-FGB20N60SFD-F085

IGBT Transistors 600V 20A FSP IGBT
ATTINY412-SSNR

Mfr.#: ATTINY412-SSNR

OMO.#: OMO-ATTINY412-SSNR

8-bit Microcontrollers - MCU 105C, Green, 20MHz, SOIC8, T&R
ATTINY412-SSNR

Mfr.#: ATTINY412-SSNR

OMO.#: OMO-ATTINY412-SSNR-MICROCHIP-TECHNOLOGY

105C, Green, 20MHz, SOIC8, T&R
IKB40N65ES5ATMA1

Mfr.#: IKB40N65ES5ATMA1

OMO.#: OMO-IKB40N65ES5ATMA1-INFINEON-TECHNOLOGIES

40A 650V TRENCHSTOP5 MEDIUM SPEE
STEF01FTR

Mfr.#: STEF01FTR

OMO.#: OMO-STEF01FTR-STMICROELECTRONICS

IC ELECTRONIC FUSE
IKB40N65EF5ATMA1

Mfr.#: IKB40N65EF5ATMA1

OMO.#: OMO-IKB40N65EF5ATMA1-INFINEON-TECHNOLOGIES

40A 650V TRENCHSTOP5 ULTRA FAST
CRCW060310K0FKEAC

Mfr.#: CRCW060310K0FKEAC

OMO.#: OMO-CRCW060310K0FKEAC-VISHAY-DALE

D11/CRCW0603-C 100 10K 1% ET1
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von FGB40T65SPD-F085 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,83 $
2,83 $
10
2,41 $
24,10 $
100
2,09 $
209,00 $
250
1,98 $
495,00 $
500
1,76 $
880,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
  • Gate Drivers
    The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
  • NCP137 700 mA LDO Regulators
    ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
  • NCP114 Low Dropout Regulators
    ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
  • Compare FGB40T65SPD-F085
    FGB40N60SM vs FGB40N6S2 vs FGB40T65SPDF085
  • LC717A00AR Touch Sensor
    These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
  • FDMQ86530L Quad-MOSFET
    ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
Top