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SI4559EY

SI4559EY
Mfr. #:
SI4559EY
Hersteller:
Vishay Intertechnologies
Beschreibung:
MOSFET 60V 4.5/3.1A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4559EY Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
SI4559E, SI4559, SI455, SI45, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Interface ICs 60V 4.5/3.1A
***ark
MOSFET, DUAL, NP, SO-8; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:60V; Current, Id Cont:3.1A; On State Resistance:0.1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOIC; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:4.5A; External Depth:5.26mm; External Length / Height:1.2mm; External Width:6.2mm; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; Package / Case:SOIC; Termination Type:SMD; Cont Current Id N Channel 2:4.5A; Cont Current Id P Channel:3.1A; N-channel Gate Charge:19nC; On State Resistance @ Vgs = 10V N Channel:55mohm; On State Resistance @ Vgs = 10V P Channel:120mohm; On State Resistance @ Vgs = 4.5V N Channel:75mohm; On State Resistance @ Vgs = 4.5V P Channel:150mohm; P Channel Gate Charge:16nC; Power Dissipation Pd:2.4W; Pulse Current Idm:30A; Voltage Vds:60V
Teil # Mfg. Beschreibung Aktie Preis
SI4559EY
DISTI # 781-SI4559EY		Vishay IntertechnologiesMOSFET 60V 4.5/3.1A
RoHS: Not compliant		0
    SI4559EY-T1-E3
    DISTI # 781-SI4559EY-T1-E3    		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4559ADY-T1-GE3
    RoHS: Compliant    		0
      SI4559EY-T1
      DISTI # 781-SI4559EY-TR      		Vishay IntertechnologiesMOSFET 60V 4.5/3.1A
      RoHS: Not compliant      		0
        SI4559EY-T1-GE3
        DISTI # 781-SI4559EY-GE3        		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4559ADY-T1-GE3
        RoHS: Compliant        		0
          SI4559EY-E3
          DISTI # 781-SI4559EY-E3          		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI4559ADY-T1-GE3
          RoHS: Compliant          		0
            SI4559EYVishay SiliconixMOSFET Transistor, Pair, Complementary, SO4
            • 5:$4.8950
            • 2:$5.5625
            • 1:$6.6750
            SI4559EY-T1Vishay SiliconixMOSFET Transistor, Pair, Complementary, SO2499
            • 1404:$0.6510
            • 775:$0.7130
            • 1:$1.8600
            SI4559EY-T1Vishay IntertechnologiesMOSFET Transistor, Pair, Complementary, SO1135
            • 405:$4.5000
            • 181:$4.9500
            • 1:$9.0000
            SI4559EY-T1-E3Vishay Intertechnologies 4687
              SI4559EY
              DISTI # SI4559EY              		Vishay Siliconix 
              RoHS: Not Compliant              		100 in Stock0 on Order
              • 1:$3.4500
              SI4559EYT1E3Vishay IntertechnologiesPower Field-Effect Transistor, 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
              RoHS: Compliant              		4200
                Bild Teil # Beschreibung
                SI4532DY

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                		 MOSFET 30V Dual N/P FET Enhancement Mode
                SI4500

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                SI4500BDY

                Mfr.#: SI4500BDY

                OMO.#: OMO-SI4500BDY-1190

                		 6600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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                Mfr.#: SI4511DY-T1

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                		 MOSFET, NP-CH, 20V, SO8
                SI4532DY-T1-GE3

                Mfr.#: SI4532DY-T1-GE3

                OMO.#: OMO-SI4532DY-T1-GE3-1190

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                SI4539DY-T1-E3

                Mfr.#: SI4539DY-T1-E3

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                Mfr.#: SI4558DY-T1

                OMO.#: OMO-SI4558DY-T1-1190

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                SI4559ADY-T1-E3.

                Mfr.#: SI4559ADY-T1-E3.

                OMO.#: OMO-SI4559ADY-T1-E3--1190

                		 Neu und Original
                SI4564DY-T1-GE3

                Mfr.#: SI4564DY-T1-GE3

                OMO.#: OMO-SI4564DY-T1-GE3-VISHAY

                		 MOSFET N/P-CH 40V 10A 8SOIC
                SI4569DY-T1-E3

                Mfr.#: SI4569DY-T1-E3

                OMO.#: OMO-SI4569DY-T1-E3-VISHAY

                		 MOSFET N/P-CH 40V 7.6A 8-SOIC
                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                2000
                Menge eingeben:
                Der aktuelle Preis von SI4559EY dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
                Referenzpreis (USD)
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                Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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