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IRF3808STRLPBF

IRF3808STRLPBF
Mfr. #:
IRF3808STRLPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 75V 105A 7mOhm 150nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF3808STRLPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3808STRLPBF DatasheetIRF3808STRLPBF Datasheet (P4-P6)IRF3808STRLPBF Datasheet (P7-P9)IRF3808STRLPBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
75 V
Id - Kontinuierlicher Drainstrom:
106 A
Rds On - Drain-Source-Widerstand:
7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Qg - Gate-Ladung:
220 nC
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
200 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
100 S
Abfallzeit:
120 ns
Produktart:
MOSFET
Anstiegszeit:
140 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001559612
Gewichtseinheit:
0.139332 oz
Tags
IRF3808S, IRF3808, IRF38, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:106A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 75V, 106A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 106A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0059ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 200W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
IRF3808STRLPBF
DISTI # V36:1790_13890385		Infineon Technologies AGTrans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1600
  • 800:$1.2490
IRF3808STRLPBF
DISTI # V72:2272_13890385		Infineon Technologies AGTrans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1342
  • 1000:$1.0850
  • 500:$1.2746
  • 250:$1.6091
  • 100:$1.6928
  • 25:$1.9095
  • 10:$1.9323
  • 1:$2.2057
IRF3808STRLPBF
DISTI # IRF3808STRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 75V 106A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		864In Stock
  • 100:$2.3923
  • 10:$2.9170
  • 1:$3.2700
IRF3808STRLPBF
DISTI # IRF3808STRLPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 75V 106A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		864In Stock
  • 100:$2.3923
  • 10:$2.9170
  • 1:$3.2700
IRF3808STRLPBF
DISTI # IRF3808STRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 75V 106A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		800In Stock
  • 800:$1.6995
IRF3808STRLPBF
DISTI # 28982128		Infineon Technologies AGTrans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		56800
  • 8000:$1.0012
  • 4800:$1.0041
  • 3200:$1.0069
  • 1600:$1.0108
  • 800:$1.0137
IRF3808STRLPBF
DISTI # 31046231		Infineon Technologies AGTrans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1342
  • 1000:$1.0850
  • 500:$1.2746
  • 250:$1.6091
  • 100:$1.6928
  • 25:$1.9095
  • 10:$1.9323
  • 7:$2.2057
IRF3808STRLPBF
DISTI # IRF3808STRLPBF		Infineon Technologies AGTrans MOSFET N-CH 75V 106A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3808STRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 8000
  • 800:$1.0559
  • 1600:$1.0529
  • 3200:$1.0489
  • 4800:$1.0459
  • 8000:$1.0429
IRF3808STRLPBF
DISTI # IRF3808STRLPBF		Infineon Technologies AGTrans MOSFET N-CH 75V 106A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF3808STRLPBF)
RoHS: Not Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 800:$0.9988
  • 1600:$0.9578
  • 2400:$0.9448
  • 4000:$0.9080
  • 8000:$0.8964
  • 20000:$0.8740
  • 40000:$0.8527
IRF3808STRLPBF
DISTI # 34AC1769		Infineon Technologies AGMOSFET, N-CH, 75V, 106A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:106A,Drain Source Voltage Vds:75V,On Resistance Rds(on):0.0059ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes334
  • 1:$2.7300
  • 10:$2.3200
  • 25:$2.2200
  • 50:$2.1100
  • 100:$2.0100
  • 250:$1.9100
  • 500:$1.7100
IRF3808STRLPBF
DISTI # 70017668		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 75V,RDS(ON) 5.9 Milliohms,ID 106A,D2Pak,PD 200W,VGS +/-2
RoHS: Compliant		0
  • 800:$4.7090
IRF3808STRLPBF
DISTI # 942-IRF3808STRLPBF		Infineon Technologies AGMOSFET MOSFT 75V 105A 7mOhm 150nC
RoHS: Compliant		513
  • 1:$2.7300
  • 10:$2.3200
  • 100:$2.0100
  • 250:$1.9100
  • 500:$1.7100
IRF3808STRLPBF
DISTI # 9154941P		Infineon Technologies AGMOSFET N-CHANNEL HEXFET 75V 106A D2PAK, RL1390
  • 25:£0.7380
IRF3808STRLPBF
DISTI # 2781107		Infineon Technologies AGMOSFET, N-CH, 75V, 106A, TO-263
RoHS: Compliant		334
  • 1:$2.6500
  • 10:$2.4800
  • 100:$2.1900
  • 250:$2.0700
  • 500:$1.9700
  • 1000:$1.8700
IRF3808STRLPBF
DISTI # 2781107		Infineon Technologies AGMOSFET, N-CH, 75V, 106A, TO-263
RoHS: Compliant		334
  • 1:£2.2800
  • 10:£1.7700
  • 100:£1.5400
  • 250:£1.4500
  • 500:£1.1000
IRF3808STRLPBF
DISTI # C1S322000480463		Infineon Technologies AGTrans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R1342
  • 250:$1.6091
  • 100:$1.6928
  • 25:$1.9095
  • 10:$1.9323
IRF3808STRLPBF
DISTI # C1S322000526118		Infineon Technologies AGTrans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R56800
  • 2400:$1.0700
  • 1600:$1.1500
  • 800:$1.5000
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Verfügbarkeit
Aktie:
568
Auf Bestellung:
2551
Menge eingeben:
Der aktuelle Preis von IRF3808STRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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