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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUZ101SL E3045A | Infineon Technologies AG | 850 |
| |
| BUZ101SL-E3045A | Infineon Technologies AG | 20 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 918 | |
| BUZ101SL-E3045A | Infineon Technologies AG | 20 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 680 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BUZ101S OMO.#: OMO-BUZ101S-1190 |
Power Field-Effect Transistor, 22A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: BUZ101SL OMO.#: OMO-BUZ101SL-1190 |
Power Field-Effect Transistor, 20A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: BUZ101SL E3045A OMO.#: OMO-BUZ101SL-E3045A-1190 |
20 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |