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BSC040N10NS5ATMA1

BSC040N10NS5ATMA1
Mfr. #:
BSC040N10NS5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 100V 100A TDSON-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC040N10NS5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC040N10NS5ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
INFINEO
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
BSC040N10NS5 SP001295030
Gewichtseinheit
0.017870 oz
Montageart
SMD/SMT
Paket-Koffer
TDSON-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
139 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
10 ns
Anstiegszeit
9 ns
Vgs-Gate-Source-Spannung
+/- 20 V
ID-Dauer-Drain-Strom
100 A
Vds-Drain-Source-Breakdown-Voltage
100 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Widerstand
5.6 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
32 ns
Typische-Einschaltverzögerungszeit
13 ns
Qg-Gate-Ladung
58 nC
Vorwärts-Transkonduktanz-Min
60 S
Kanal-Modus
Erweiterung
Tags
BSC040, BSC04, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 4 mOhm 58 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 100V 100A Automotive 8-Pin TDSON EP T/R
***ark
Mosfet, N-Ch, 100V, 100A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Teil # Mfg. Beschreibung Aktie Preis
BSC040N10NS5ATMA1
DISTI # BSC040N10NS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.0725
BSC040N10NS5ATMA1
DISTI # BSC040N10NS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.2321
  • 500:$1.4871
  • 100:$1.9119
  • 10:$2.3790
  • 1:$2.6300
BSC040N10NS5ATMA1
DISTI # BSC040N10NS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.2321
  • 500:$1.4871
  • 100:$1.9119
  • 10:$2.3790
  • 1:$2.6300
BSC040N10NS5ATMA1
DISTI # BSC040N10NS5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC040N10NS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.8639
  • 10000:$0.8329
  • 20000:$0.8029
  • 30000:$0.7759
  • 50000:$0.7619
BSC040N10NS5ATMA1
DISTI # BSC040N10NS5		Infineon Technologies AGTrans MOSFET N-CH 100V 100A 8-Pin TDSON T/R (Alt: BSC040N10NS5)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC040N10NS5ATMA1
    DISTI # 12AC9444    		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
    • 1:$2.2100
    • 10:$1.8800
    • 25:$1.7500
    • 50:$1.6300
    • 100:$1.5000
    • 250:$1.4100
    • 500:$1.3200
    • 1000:$1.0900
    BSC040N10NS5ATMA1
    DISTI # 726-BSC040N10NS5ATMA    		Infineon Technologies AGMOSFET N-Ch 100V 100A TDSON-8
    RoHS: Compliant    		6
    • 1:$2.2100
    • 10:$1.8800
    • 100:$1.5000
    • 500:$1.3200
    • 1000:$1.0900
    • 2500:$1.0200
    • 5000:$0.9760
    BSC040N10NS5
    DISTI # 726-BSC040N10NS5    		Infineon Technologies AGMOSFET N-Ch 100V 100A TDSON-8
    RoHS: Compliant    		0
    • 1:$2.2100
    • 10:$1.8800
    • 100:$1.5000
    • 500:$1.3200
    • 1000:$1.0900
    • 2500:$1.0200
    • 5000:$0.9760
    BSC040N10NS5ATMA1
    DISTI # 2709851    		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON
    RoHS: Compliant    		0
    • 1:£1.9800
    • 10:£1.3800
    • 100:£1.1400
    • 250:£1.0600
    • 500:£0.9870
    BSC040N10NS5ATMA1
    DISTI # 2709851    		Infineon Technologies AGMOSFET, N-CH, 100V, 100A, TDSON
    RoHS: Compliant    		0
    • 1:$4.1900
    • 10:$3.8000
    • 100:$3.0500
    • 500:$2.3800
    • 1000:$1.9700
    Bild Teil # Beschreibung
    BSC040N10NS5ATMA1

    Mfr.#: BSC040N10NS5ATMA1

    OMO.#: OMO-BSC040N10NS5ATMA1

    		 MOSFET N-Ch 100V 100A TDSON-8
    BSC040N10NS5

    Mfr.#: BSC040N10NS5

    OMO.#: OMO-BSC040N10NS5

    		 MOSFET N-Ch 100V 100A TDSON-8
    BSC040N10NS5

    Mfr.#: BSC040N10NS5

    OMO.#: OMO-BSC040N10NS5-1190

    		 MOSFET N-Ch 100V 100A TDSON-8
    BSC040N10NS5ATMA1

    Mfr.#: BSC040N10NS5ATMA1

    OMO.#: OMO-BSC040N10NS5ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-Ch 100V 100A TDSON-8
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von BSC040N10NS5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,14 $
    1,14 $
    10
    1,09 $
    10,86 $
    100
    1,03 $
    102,86 $
    500
    0,97 $
    485,70 $
    1000
    0,91 $
    914,30 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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