R6025JNZC8

R6025JNZC8
Mfr. #:
R6025JNZC8
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET NCH 600V 25A POWER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
R6025JNZC8 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
R6025JNZC8 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-3PF
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
25 A
Rds On - Drain-Source-Widerstand:
182 mOhms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
57 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
85 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PrestoMOS
Verpackung:
Schüttgut
Serie:
BM14270MUV-LB
Transistortyp:
1 N-Channel
Marke:
ROHM Halbleiter
Abfallzeit:
18 ns
Produktart:
MOSFET
Anstiegszeit:
24 ns
Werkspackungsmenge:
360
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
60 ns
Typische Einschaltverzögerungszeit:
33 ns
Tags
R6025J, R6025, R602, R60
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
R60xx PrestoMOS™ High-Voltage MOSFETs
ROHM Semiconductor R60xx PrestoMOS™ High-Voltage MOSFETs incorporate fast recovery diodes to optimize board space while providing 600V in five package types. These third-generation metal-oxide semiconductor field-effect transistors are ideal for power supplies with integrated inverters. The devices' high-speed switching combined with an internal diode with high Reverse Recovery Time (trr) characteristics optimize efficiency and lower loss while contributing to smaller designs.
Teil # Mfg. Beschreibung Aktie Preis
R6025JNZC8
DISTI # 32373948
ROHM SemiconductorR6025JNZC815
  • 10:$6.9360
  • 4:$8.0070
R6025JNZC8
DISTI # R6025JNZC8-ND
ROHM SemiconductorNCH 600V 25A POWER MOSFET,R6025
RoHS: Compliant
Min Qty: 1
Container: Bag
15In Stock
  • 1000:$4.6326
  • 500:$5.1290
  • 100:$5.8900
  • 10:$7.1140
  • 1:$7.8800
R6025JNZC8
DISTI # C1S625901812301
ROHM SemiconductorMOSFETs
RoHS: Compliant
15
  • 10:$5.4400
  • 1:$6.2800
R6025JNZC8
DISTI # 01AH7820
ROHM SemiconductorMOSFET, N-CH, 25A, 600V, TO-3PF,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:15V,Threshold Voltage Vgs:6V,Power Dissipation RoHS Compliant: Yes15
  • 500:$5.1700
  • 250:$5.6800
  • 100:$5.9400
  • 50:$6.3900
  • 25:$6.8500
  • 10:$7.1800
  • 1:$7.9500
R6025JNZC8
DISTI # 755-R6025JNZC8
ROHM SemiconductorMOSFET NCH 600V 25A POWER
RoHS: Compliant
15
  • 1:$7.8700
  • 10:$7.1100
  • 25:$6.7800
  • 100:$5.8800
  • 250:$5.6200
  • 500:$5.1200
  • 1000:$4.4600
R6025JNZC8ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***12
  • 10:$7.2800
  • 4:$8.0080
  • 1:$10.9200
R6025JNZC8ROHM SemiconductorRoHS(ship within 1day)15
  • 1:$5.2400
  • 10:$4.4600
  • 50:$3.9300
  • 100:$3.7800
  • 500:$3.7200
  • 1000:$3.6400
R6025JNZC8
DISTI # 3018873
ROHM SemiconductorMOSFET, N-CH, 25A, 600V, TO-3PF15
  • 100:£2.8600
  • 50:£3.0500
  • 10:£3.2500
  • 5:£3.6100
  • 1:£3.9600
R6025JNZC8ROHM SemiconductorMOSFET NCH 600V 25A POWER
RoHS: Compliant
Americas -
    R6025JNZC8
    DISTI # 3018873
    ROHM SemiconductorMOSFET, N-CH, 25A, 600V, TO-3PF
    RoHS: Compliant
    15
    • 10:$5.6900
    • 5:$5.9200
    • 1:$6.3200
    Bild Teil # Beschreibung
    R6025JNXC7G

    Mfr.#: R6025JNXC7G

    OMO.#: OMO-R6025JNXC7G

    MOSFET NCH 600V 25A POWER
    R6025JNZC8

    Mfr.#: R6025JNZC8

    OMO.#: OMO-R6025JNZC8

    MOSFET NCH 600V 25A POWER
    R6025JNZ4C13

    Mfr.#: R6025JNZ4C13

    OMO.#: OMO-R6025JNZ4C13

    MOSFET NCH 600V 25A POWER
    R6025ANZC8

    Mfr.#: R6025ANZC8

    OMO.#: OMO-R6025ANZC8

    MOSFET 10V Drive Nch MOSFET
    R6025FNZ1C9

    Mfr.#: R6025FNZ1C9

    OMO.#: OMO-R6025FNZ1C9

    MOSFET 10V Drive Nch MOSFET
    R6025FNZC8

    Mfr.#: R6025FNZC8

    OMO.#: OMO-R6025FNZC8-ROHM-SEMI

    MOSFET N-CH 600V 25A TO3PF
    R6025JNZC8

    Mfr.#: R6025JNZC8

    OMO.#: OMO-R6025JNZC8-1190

    NCH 600V 25A POWER MOSFET; R6025
    R6025ANZ

    Mfr.#: R6025ANZ

    OMO.#: OMO-R6025ANZ-1190

    Neu und Original
    R6025ANZC8

    Mfr.#: R6025ANZC8

    OMO.#: OMO-R6025ANZC8-ROHM-SEMI

    MOSFET N-CH 600V 25A TO3PF
    R6025ENZ1

    Mfr.#: R6025ENZ1

    OMO.#: OMO-R6025ENZ1-1190

    Neu und Original
    Verfügbarkeit
    Aktie:
    15
    Auf Bestellung:
    1998
    Menge eingeben:
    Der aktuelle Preis von R6025JNZC8 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    7,87 $
    7,87 $
    10
    7,11 $
    71,10 $
    25
    6,78 $
    169,50 $
    100
    5,88 $
    588,00 $
    250
    5,62 $
    1 405,00 $
    500
    5,12 $
    2 560,00 $
    1000
    4,46 $
    4 460,00 $
    2500
    4,30 $
    10 750,00 $
    Beginnen mit
    Neueste Produkte
    • IO-Link™ Devices
      Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
    • Large Diameter Clear Hole Spacers
      RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
    • WE-ExB Series Common Mode Power Line Choke
      Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
    • CPI2-B1-REU Production Device Programmer
      Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
    • Compare R6025JNZC8
      R6025JNXC7G vs R6025JNZ4C13 vs R6025JNZC8
    • CFSH05-20L Schottky Diode
      Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
    Top