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BSC014N06NSATMA1

BSC014N06NSATMA1
Mfr. #:
BSC014N06NSATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 60V 100A TDSON-8 OptiMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC014N06NSATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC014N06NSATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
1.45 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
89 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
156 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 5
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
75 S
Abfallzeit:
11 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
43 ns
Typische Einschaltverzögerungszeit:
23 ns
Teil # Aliase:
BSC014N06NS BSC14N6NSXT SP000924886
Gewichtseinheit:
0.003527 oz
Tags
BSC014N06, BSC014N0, BSC014, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 8-Pin TDSON Infineon BSC014N06NSATMA1
***ure Electronics
Single N-Channel 60 V 1.45 mOhm 89 nC OptiMOS™ Power Mosfet - TDSON-8
***et Europe
Trans MOSFET N-CH 60V 100A 8-Pin TDSON FL T/R
***p One Stop Global
Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R
***ical
Trans MOSFET N-CH 60V 30A 8-Pin TDSON EP
***an P&S
60V,1.45mΩ,100A,N-Ch Power MOSFET
***ark
MOSFET, N CH, 60V, 100A, TDSON-8
***i-Key
MOSFET N-CH 60V 30A TDSON-8
***ronik
N-CH 60V 100A 1,45mOhm TDSON-8
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 60V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:156W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, N CH, 60V, 100A, TDSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0012ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:156W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BSC014N06NSATMA1
DISTI # V72:2272_06378037		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 3000:$1.5690
  • 1000:$1.5859
  • 500:$1.6019
  • 250:$1.8000
  • 100:$1.9140
  • 25:$2.2330
  • 10:$2.2560
  • 1:$2.9392
BSC014N06NSATMA1
DISTI # V36:1790_06378037		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R
RoHS: Compliant		0
  • 5000000:$1.2350
  • 2500000:$1.2360
  • 500000:$1.2870
  • 50000:$1.3580
  • 5000:$1.3690
BSC014N06NSATMA1
DISTI # BSC014N06NSATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		15000In Stock
  • 1000:$1.5423
  • 500:$1.8287
  • 100:$2.1482
  • 10:$2.6220
  • 1:$2.9200
BSC014N06NSATMA1
DISTI # BSC014N06NSATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		15000In Stock
  • 1000:$1.5423
  • 500:$1.8287
  • 100:$2.1482
  • 10:$2.6220
  • 1:$2.9200
BSC014N06NSATMA1
DISTI # BSC014N06NSATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 30A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		10000In Stock
  • 5000:$1.3690
BSC014N06NSATMA1
DISTI # 33946687		Infineon Technologies AGTrans MOSFET N-CH 60V 30A 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5:$2.9392
BSC014N06NSATMA1
DISTI # BSC014N06NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON FL T/R - Tape and Reel (Alt: BSC014N06NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$1.1900
  • 20000:$1.2900
  • 30000:$1.2900
  • 5000:$1.3900
  • 10000:$1.3900
BSC014N06NSATMA1
DISTI # SP000924886		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON FL T/R (Alt: SP000924886)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€1.1900
  • 20000:€1.2900
  • 30000:€1.2900
  • 10000:€1.3900
  • 5000:€1.8900
BSC014N06NSATMA1
DISTI # 47Y7993		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 150DEG C, 156W,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0012ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes0
  • 500:$1.7100
  • 250:$1.9000
  • 100:$2.0000
  • 50:$2.1000
  • 25:$2.2100
  • 10:$2.3100
  • 1:$2.7200
BSC014N06NS
DISTI # 726-BSC014N06NS		Infineon Technologies AGMOSFET N-Ch 60V 100A TDSON-8 OptiMOS
RoHS: Compliant		44550
  • 1:$2.6900
  • 10:$2.2900
  • 100:$1.9800
  • 250:$1.8800
  • 500:$1.6900
BSC014N06NSATMA1
DISTI # 726-BSC014N06NSATMA1		Infineon Technologies AGMOSFET N-Ch 60V 100A TDSON-8 OptiMOS
RoHS: Compliant		4384
  • 1:$2.6900
  • 10:$2.2900
  • 100:$1.9800
  • 250:$1.8800
  • 500:$1.6900
BSC014N06NSATMA1
DISTI # 2443419		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
RoHS: Compliant		8485
  • 5000:$2.5000
  • 500:$2.5500
  • 250:$2.8300
  • 100:$2.9800
  • 10:$3.4500
  • 1:$4.0500
BSC014N06NSATMA1
DISTI # 2443419		Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-84979
  • 100:£1.9300
  • 10:£2.2400
  • 1:£2.9600
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1987
Menge eingeben:
Der aktuelle Preis von BSC014N06NSATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,69 $
2,69 $
10
2,29 $
22,90 $
100
1,98 $
198,00 $
250
1,88 $
470,00 $
500
1,69 $
845,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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