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SI4160DY-T1-GE3

SI4160DY-T1-GE3
Mfr. #:
SI4160DY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4160DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4160DY-T1-GE3 DatasheetSI4160DY-T1-GE3 Datasheet (P4-P6)SI4160DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SI4160DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI4
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Teil # Aliase:
SI4160DY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4160DY-T1, SI4160DY-T, SI4160D, SI4160, SI416, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Transistor MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R
***ure Electronics
N-CH MOSFET SO-8 BWL 30V 4.9MOHM @10V- LEAD(PB) AND HALOGEN FREE
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25.4A; On Resistance Rds(On):0.004Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4160DY-T1-GE3
DISTI # V72:2272_09215537		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R
RoHS: Compliant		2915
  • 1000:$0.4999
  • 500:$0.7375
  • 250:$0.7698
  • 100:$0.8553
  • 25:$1.0051
  • 10:$1.1168
  • 1:$1.4841
SI4160DY-T1-GE3
DISTI # V36:1790_09215537		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500:$0.5318
SI4160DY-T1-GE3
DISTI # SI4160DY-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 25.4A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1302In Stock
  • 1000:$0.6327
  • 500:$0.8014
  • 100:$0.9701
  • 10:$1.2440
  • 1:$1.3900
SI4160DY-T1-GE3
DISTI # SI4160DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 25.4A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1302In Stock
  • 1000:$0.6327
  • 500:$0.8014
  • 100:$0.9701
  • 10:$1.2440
  • 1:$1.3900
SI4160DY-T1-GE3
DISTI # SI4160DY-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 25.4A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 12500:$0.5242
  • 5000:$0.5446
  • 2500:$0.5733
SI4160DY-T1-GE3
DISTI # 25789831		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R
RoHS: Compliant		2915
  • 17:$1.4841
SI4160DY-T1-GE3
DISTI # 31043808		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R
RoHS: Compliant		2500
  • 2500:$0.4894
SI4160DY-T1-GE3
DISTI # SI4160DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4160DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 25000
  • 25000:$0.4273
  • 15000:$0.4391
  • 10000:$0.4516
  • 5000:$0.4708
  • 2500:$0.4852
SI4160DY-T1-GE3
DISTI # SI4160DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R (Alt: SI4160DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4160DY-T1-GE3
    DISTI # SI4160DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 16.8A 8-Pin SOIC N T/R (Alt: SI4160DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel    		Europe - 0
    • 25000:€0.4819
    • 15000:€0.5039
    • 10000:€0.5699
    • 5000:€0.7019
    • 2500:€0.9789
    SI4160DY-T1-GE3
    DISTI # 05W6940    		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 25.4A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:25.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
    • 500:$0.7650
    • 250:$0.8620
    • 100:$1.0300
    • 50:$1.1400
    • 25:$1.2600
    • 10:$1.3900
    • 1:$1.4700
    SI4160DY-T1-GE3.
    DISTI # 15AC0296    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:25.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Power Dissipation Pd:5.7W,No. of Pins:8Pins RoHS Compliant: Yes27500
    • 25000:$0.4410
    • 15000:$0.4530
    • 10000:$0.4660
    • 5000:$0.4850
    • 1:$0.5000
    SI4160DY-T1-GE3
    DISTI # 781-SI4160DY-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
    RoHS: Compliant    		2392
    • 1:$1.3600
    • 10:$1.1200
    • 100:$0.8610
    • 500:$0.7410
    • 1000:$0.5840
    • 2500:$0.5450
    • 5000:$0.5180
    • 10000:$0.4990
    SI4160DY-T1-GE3Vishay Intertechnologies 1776
      SI4160DY-T1-GE3Vishay Intertechnologies 140
        SI4160DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
        RoHS: Compliant        		Americas - 2500
        • 2500:$0.5550
        • 5000:$0.5240
        • 10000:$0.5080
        • 20000:$0.4970
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1985
        Menge eingeben:
        Der aktuelle Preis von SI4160DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,36 $
        1,36 $
        10
        1,12 $
        11,20 $
        100
        0,86 $
        86,10 $
        500
        0,74 $
        370,50 $
        1000
        0,58 $
        584,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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