SI7102DN-T1-E3

Mfr. #:: SI7102DN-T1-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI7102DN-T1-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PowerPAK-1212-8

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 1.04 mm

Länge:: 3.3 mm

Serie:: SI7

Breite:: 3.3 mm

Marke:: Vishay / Siliconix

Produktart:: MOSFET

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Teil # Aliase:: SI7102DN-E3

Tags: SI7102, SI710, SI71, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7102DN-T1-E3 Beschreibung

***et Europe: Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R

***i-Key: MOSFET N-CH 12V 35A PPAK 1212-8

*** Services: CoC and 2-years warranty / RFQ for pricing

***ment14 APAC: MOSFET, N, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:12V; On Resistance Rds(on):4.7mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:52mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:7102; Current Id Max:25A; N-channel Gate Charge:41nC; Package / Case:PowerPAK; Power Dissipation Pd:52mW; Pulse Current Idm:60A; Termination Type:SMD; Voltage Vds Typ:12V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:2.5V; Voltage Vgs th Min:0.4V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI7102DN-T1-E3 DISTI # V36:1790_09215601	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	0
SI7102DN-T1-E3 DISTI # SI7102DN-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 12V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI7102DN-T1-E3 DISTI # SI7102DN-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 12V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI7102DN-T1-E3 DISTI # SI7102DN-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 12V 35A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI7102DN-T1-E3 DISTI # 75M5533	Vishay Intertechnologies	MOSFET Transistor, N Channel, 35 A, 12 V, 0.0031 ohm, 4.5 V, 1 V RoHS Compliant: Yes	0
SI7102DN-T1-E3 DISTI # 781-SI7102DN-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3 RoHS: Compliant	0
SI7102DN-T1-E3 DISTI # 1497630RL	Vishay Intertechnologies	MOSFET, N, POWERPAK RoHS: Compliant	0	3000:$1.5900 1000:$1.6200 500:$1.7000 100:$1.9400 10:$2.5000 1:$3.0100
SI7102DN-T1-E3 DISTI # 1497630	Vishay Intertechnologies	MOSFET, N, POWERPAK RoHS: Compliant	0	3000:$1.5900 1000:$1.6200 500:$1.7000 100:$1.9400 10:$2.5000 1:$3.0100

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von SI7102DN-T1-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Beginnen mit

SI7102 4
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SI7 1547

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SI7102DN-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes