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SI4126DY-T1-GE3

SI4126DY-T1-GE3
Mfr. #:
SI4126DY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4126DY-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4126DY-T1-GE3 DatasheetSI4126DY-T1-GE3 Datasheet (P4-P6)SI4126DY-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
SI4126DY-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
39 A
Rds On - Drain-Source-Widerstand:
2.75 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
70 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
7.8 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI4
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
75 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
10 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
43 ns
Typische Einschaltverzögerungszeit:
15 ns
Teil # Aliase:
SI4126DY-GE3
Gewichtseinheit:
0.006596 oz
Tags
SI4126DY-T, SI4126D, SI4126, SI412, SI41, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.00275 Ohm Surface Mount Power Mosfet - SOIC-8
***et
Trans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:39000mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:3.5W ;RoHS Compliant: Yes
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI4126DY-T1-GE3
DISTI # V72:2272_09215532		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R0
    SI4126DY-T1-GE3
    DISTI # V36:1790_09215532    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R0
    • 2500000:$1.3090
    • 1250000:$1.3100
    • 250000:$1.3320
    • 25000:$1.3570
    • 2500:$1.3610
    SI4126DY-T1-GE3
    DISTI # SI4126DY-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 30V 39A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 5000:$1.0920
    • 2500:$1.1340
    SI4126DY-T1-GE3
    DISTI # SI4126DY-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 30V 39A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$1.2545
    • 500:$1.5141
    • 100:$1.8429
    • 10:$2.2930
    • 1:$2.5500
    SI4126DY-T1-GE3
    DISTI # SI4126DY-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 30V 39A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$1.2545
    • 500:$1.5141
    • 100:$1.8429
    • 10:$2.2930
    • 1:$2.5500
    SI4126DY-T1-GE3
    DISTI # SI4126DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4126DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
      SI4126DY-T1-GE3
      DISTI # SI4126DY-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R (Alt: SI4126DY-T1-GE3)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 25000:€0.5919
      • 15000:€0.6179
      • 10000:€0.6999
      • 5000:€0.8629
      • 2500:€1.2029
      SI4126DY-T1-GE3
      DISTI # SI4126DY-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 26.5A 8-Pin SOIC N T/R (Alt: SI4126DY-T1-GE3)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Asia - 0
        SI4126DY-T1-GE3
        DISTI # 16P3727        		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 39A, SOIC, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes0
        • 1:$1.4100
        • 2500:$1.4100
        SI4126DY-T1-GE3
        DISTI # 18X0010        		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 39A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:39A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes0
        • 500:$1.4900
        • 250:$1.7300
        • 100:$1.9900
        • 50:$2.2300
        • 25:$2.4700
        • 10:$2.6700
        • 1:$2.8000
        SI4126DY-T1-GE3
        DISTI # 781-SI4126DY-T1-GE3        		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
        RoHS: Compliant        		0
        • 1:$2.4800
        • 10:$2.0600
        • 100:$1.6000
        • 500:$1.4000
        • 1000:$1.1500
        • 2500:$1.0800
        • 5000:$1.0400
        SI4126DY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8Americas - Stock
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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1984
          Menge eingeben:
          Der aktuelle Preis von SI4126DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          2,48 $
          2,48 $
          10
          2,06 $
          20,60 $
          100
          1,60 $
          160,00 $
          500
          1,40 $
          700,00 $
          1000
          1,15 $
          1 150,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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