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STGP10NC60HD

STGP10NC60HD
Mfr. #:
STGP10NC60HD
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors PowerMESH TM IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGP10NC60HD Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STGP10NC60HD Mehr Informationen STGP10NC60HD Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.9 V
Maximale Gate-Emitter-Spannung:
20 V
Pd - Verlustleistung:
56 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
STGP10NC60HD
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
20 A
Höhe:
9.15 mm
Länge:
10.4 mm
Breite:
4.6 mm
Marke:
STMicroelectronics
Kontinuierlicher Kollektorstrom:
7 A
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
IGBTs
Gewichtseinheit:
0.012346 oz
Tags
STGP10NC, STGP10N, STGP10, STGP1, STGP, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***Z
    M***Z
    ES

    It corresponds to the order.

    2019-04-25
    A***v
    A***v
    RU

    Very good

    2019-07-02
    C***m
    C***m
    US

    tested good...

    2019-07-02
    D***r
    D***r
    SI

    thenks 5 stars

    2019-05-14
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***ment14 APAC
IGBT, TO-220; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Package / Case:TO-220; Power Dissipation Max:65W; Power Dissipation Pd:60W; Pulsed Current Icm:40A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
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***nsix Microsemi
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***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
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***ark
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***ineon SCT
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***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
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***ineon SCT
The 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
Teil # Mfg. Beschreibung Aktie Preis
STGP10NC60HD
DISTI # V99:2348_17652368		STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		11
  • 500:$0.4222
  • 100:$0.4554
  • 10:$0.7489
  • 1:$0.9365
STGP10NC60HD
DISTI # 497-5118-5-ND		STMicroelectronicsIGBT 600V 20A 65W TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		2011In Stock
  • 1000:$0.5497
  • 500:$0.6963
  • 100:$0.8428
  • 50:$1.0260
  • 1:$1.2100
STGP10NC60HD
DISTI # 30702251		STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		2000
  • 50:$0.5034
STGP10NC60HD
DISTI # STGP10NC60HD		STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP10NC60HD)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 0
  • 1:$0.5229
  • 10:$0.5139
  • 25:$0.5059
  • 50:$0.4979
  • 100:$0.4759
  • 500:$0.4549
  • 1000:$0.4449
STGP10NC60HDSTMicroelectronicsSTGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220
RoHS: Compliant		6350Tube
  • 50:$0.9150
  • 250:$0.7850
  • 850:$0.7100
STGP10NC60HD
DISTI # 511-STGP10NC60HD		STMicroelectronicsIGBT Transistors PowerMESH TM IGBT
RoHS: Compliant		3980
  • 1:$1.1500
  • 10:$0.9780
  • 100:$0.7510
  • 500:$0.6640
  • 1000:$0.5240
  • 2000:$0.4650
STGP10NC60HD
DISTI # C1S730200637510		STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		11
  • 10:$0.7631
STGP10NC60HD
DISTI # C1S730200483256		STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant		2000
  • 2000:$0.6880
  • 1000:$0.8310
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1986
Menge eingeben:
Der aktuelle Preis von STGP10NC60HD dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,14 $
1,14 $
10
0,98 $
9,78 $
100
0,75 $
75,10 $
500
0,66 $
332,00 $
1000
0,52 $
524,00 $
2000
0,46 $
930,00 $
10000
0,45 $
4 470,00 $
25000
0,43 $
10 825,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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