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IXTP150N15X4

IXTP150N15X4
Mfr. #:
IXTP150N15X4
Hersteller:
Littelfuse
Beschreibung:
MOSFET DISCMSFT NCH HIPERFET-QCLASS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTP150N15X4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXTP150N15X4 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Montageart:
Durchgangsloch
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
150 V
Id - Kontinuierlicher Drainstrom:
150 A
Rds On - Drain-Source-Widerstand:
7.2 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
105 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
480 W
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Serie:
X4-Class
Marke:
IXYS
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
60 ns
Typische Einschaltverzögerungszeit:
23 ns
Tags
IXTP15, IXTP1, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
X4-Class 135V-150V Power MOSFETs
IXYS X4-Class 135V-150V Power MOSFETs are developed using a charge compensation principle and proprietary process technology. This technology results in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the output capacitance, minimizing the switching losses. A low gate charge results in higher efficiency at light loads as well as lower gate drive requirements. These MOSFETs are also avalanche rated and exhibit a superior dv/dt performance. Due to the positive temperature coefficient of their on-state resistance, these MOSFETs can be operated in parallel to meet higher current requirements.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
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Verfügbarkeit
Aktie:
25
Auf Bestellung:
2008
Menge eingeben:
Der aktuelle Preis von IXTP150N15X4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
7,91 $
7,91 $
10
7,07 $
70,70 $
25
6,15 $
153,75 $
50
6,03 $
301,50 $
100
5,80 $
580,00 $
250
4,95 $
1 237,50 $
500
4,70 $
2 350,00 $
1000
3,96 $
3 960,00 $
2500
3,39 $
8 475,00 $
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