PSMN1R1-40BS,118

PSMN1R1-40BS,118
Mfr. #:
PSMN1R1-40BS,118
Hersteller:
Nexperia
Beschreibung:
MOSFET Std N-chanMOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PSMN1R1-40BS,118 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
PSMN1R1-40BS,118 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Nexperia
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
120 A
Rds On - Drain-Source-Widerstand:
1.3 mOhms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
306 W
Aufbau:
Single
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Nexperia
Produktart:
MOSFET
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.139332 oz
Tags
PSMN1R1-4, PSMN1R1, PSMN1R, PSMN1, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN1R1-40BS - N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK
***ical
Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R
***et
Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK
***i-Key
MOSFET N CH 40V 120A D2PAK
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(On):1.3Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:306W; No. Of Pins:3Pins
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 40V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00116ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:306W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C
***nell
MOSFET, CANALE N, 40V, 120A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.00116ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:306W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Teil # Mfg. Beschreibung Aktie Preis
PSMN1R1-40BS,118
DISTI # V72:2272_06540844
NexperiaPSMN1R1-40BS/D2PAK/REEL13//0
    PSMN1R1-40BS,118
    DISTI # V36:1790_06540844
    NexperiaPSMN1R1-40BS/D2PAK/REEL13//0
    • 4800000:$1.2050
    • 2400000:$1.2070
    • 480000:$1.3800
    • 48000:$1.6690
    • 4800:$1.7170
    PSMN1R1-40BS,118
    DISTI # 1727-7105-1-ND
    NexperiaMOSFET N-CH 40V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    2225In Stock
    • 100:$2.0776
    • 10:$2.5360
    • 1:$2.8200
    PSMN1R1-40BS,118
    DISTI # 1727-7105-6-ND
    NexperiaMOSFET N-CH 40V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    2225In Stock
    • 100:$2.0776
    • 10:$2.5360
    • 1:$2.8200
    PSMN1R1-40BS,118
    DISTI # 1727-7105-2-ND
    NexperiaMOSFET N-CH 40V 120A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)
    1600In Stock
    • 2400:$1.3758
    • 1600:$1.4482
    • 800:$1.7171
    PSMN1R1-40BS118
    DISTI # PSMN1R1-40BS118
    Avnet, Inc.- Bulk (Alt: PSMN1R1-40BS118)
    Min Qty: 243
    Container: Bulk
    Americas - 0
    • 1215:$1.1900
    • 2430:$1.1900
    • 243:$1.2900
    • 486:$1.2900
    • 729:$1.2900
    PSMN1R1-40BS,118
    DISTI # PSMN1R1-40BS,118
    NexperiaTrans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK (Alt: PSMN1R1-40BS,118)
    RoHS: Compliant
    Min Qty: 800
    Europe - 0
    • 8000:€1.0209
    • 4800:€1.0939
    • 3200:€1.1779
    • 1600:€1.2769
    • 800:€1.5319
    PSMN1R1-40BS,118
    DISTI # PSMN1R1-40BS,118
    NexperiaTrans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: PSMN1R1-40BS,118)
    RoHS: Compliant
    Min Qty: 4800
    Container: Reel
    Americas - 0
    • 24000:$1.1900
    • 48000:$1.1900
    • 4800:$1.2900
    • 9600:$1.2900
    • 14400:$1.2900
    PSMN1R1-40BS,118.
    DISTI # 28AC1197
    NexperiaTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:40V,On Resistance Rds(on):1.3mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:306W,No. of Pins:3Pins0
    • 24000:$1.1900
    • 1:$1.2900
    PSMN1R1-40BS,118
    DISTI # 05W5712
    NexperiaMOSFET, N CHANNEL, 40V, 120A, D2PAK,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.00116ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 500:$1.7400
    • 250:$1.9400
    • 100:$2.0400
    • 50:$2.1400
    • 25:$2.2500
    • 10:$2.3500
    • 1:$2.7700
    PSMN1R1-40BS,118
    DISTI # 771-PSMN1R1-40BS,118
    NexperiaMOSFET Std N-chanMOSFET
    RoHS: Compliant
    0
    • 1:$2.7400
    • 10:$2.3300
    • 100:$2.0200
    • 250:$1.9200
    • 500:$1.7200
    • 800:$1.4500
    • 2400:$1.3800
    • 4800:$1.3300
    PSMN1R1-40BS118NXP SemiconductorsNow Nexperia PSMN1R1-40BS - Power Field-Effect Transistor, 120A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
    RoHS: Not Compliant
    120
    • 1000:$1.3600
    • 500:$1.4300
    • 100:$1.4900
    • 25:$1.5500
    • 1:$1.6700
    PSMN1R1-40BS,118
    DISTI # 2114711
    NexperiaMOSFET, N-CH, 40V, 120A, D2PAK
    RoHS: Compliant
    0
    • 500:£1.1500
    • 250:£1.5300
    • 100:£1.6000
    • 10:£1.8500
    • 1:£2.4500
    PSMN1R1-40BS,118
    DISTI # 2114711
    NexperiaMOSFET, N-CH, 40V, 120A, D2PAK
    RoHS: Compliant
    879
    • 2500:$1.7700
    • 1000:$1.8500
    • 500:$1.9500
    • 250:$2.0600
    • 100:$2.1800
    • 25:$2.3700
    • 10:$2.6500
    • 1:$2.9300
    Bild Teil # Beschreibung
    BSS138LT3G

    Mfr.#: BSS138LT3G

    OMO.#: OMO-BSS138LT3G

    MOSFET 50V 200mA N-Channel
    RC0402FR-074K7L

    Mfr.#: RC0402FR-074K7L

    OMO.#: OMO-RC0402FR-074K7L

    Thick Film Resistors - SMD 4.7K OHM 1%
    3-1827233-6

    Mfr.#: 3-1827233-6

    OMO.#: OMO-3-1827233-6

    Board to Board & Mezzanine Connectors 44O POS PLUG BRIDGED
    47053-1000

    Mfr.#: 47053-1000

    OMO.#: OMO-47053-1000-410

    Headers & Wire Housings 4P VERT HDR W/FL
    1565749-1

    Mfr.#: 1565749-1

    OMO.#: OMO-1565749-1-TE-CONNECTIVITY

    Automotive Connectors 025 CAP ASSY
    CGA4J3X7R1C475M125AE

    Mfr.#: CGA4J3X7R1C475M125AE

    OMO.#: OMO-CGA4J3X7R1C475M125AE-TDK

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 4.7uF 16volts X7R 20% Soft Term
    BSS138LT3G

    Mfr.#: BSS138LT3G

    OMO.#: OMO-BSS138LT3G-ON-SEMICONDUCTOR

    MOSFET N-CH 50V 200MA SOT-23
    CGA6P1X7R1C226M250AC

    Mfr.#: CGA6P1X7R1C226M250AC

    OMO.#: OMO-CGA6P1X7R1C226M250AC-TDK

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1210 22uF 16volts X7R 20% T=2.5mm
    HFJ11-1G01E-L12RL

    Mfr.#: HFJ11-1G01E-L12RL

    OMO.#: OMO-HFJ11-1G01E-L12RL-402

    Modular Connectors / Ethernet Connectors GIGABIT 1x1 Tab Down Short Body RJ45
    RC0402FR-071K5L

    Mfr.#: RC0402FR-071K5L

    OMO.#: OMO-RC0402FR-071K5L-YAGEO

    Thick Film Resistors - SMD 1.5K OHM 1%
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von PSMN1R1-40BS,118 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,74 $
    2,74 $
    10
    2,33 $
    23,30 $
    100
    2,02 $
    202,00 $
    250
    1,92 $
    480,00 $
    500
    1,72 $
    860,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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