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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUK6E3R2-55C,127 DISTI # 1727-5888-ND | Nexperia | MOSFET N-CH 55V 120A I2PAK RoHS: Not compliant Min Qty: 5000 Container: Tube | Limited Supply - Call | |
| BUK6E3R2-55C,127 DISTI # BUK6E3R2-55C127 | Nexperia | Trans MOSFET N-CH 55V 120A 3-Pin(3+Tab) I2PAK Rail - Bulk (Alt: BUK6E3R2-55C127) RoHS: Not Compliant Min Qty: 343 Container: Bulk | Americas - 0 |
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| BUK6E3R2-55C,127 DISTI # 771-BUK6E3R255C127 | Nexperia | MOSFET N-CHAN 55V 120A RoHS: Compliant | 0 | |
| BUK6E3R2-55C127 | NXP Semiconductors | Now Nexperia BUK6E3R2-55C - Power Field-Effect Transistor, 120A I(D), 55V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 4973 |
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| BUK6E3R2-55C127 | Nexperia | Now Nexperia BUK6E3R2-55C - Power Field-Effect Transistor, 120A I(D), 55V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 2000 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: BUK6E3R2-55C127 OMO.#: OMO-BUK6E3R2-55C127-1190 |
Now Nexperia BUK6E3R2-55C - Power Field-Effect Transistor, 120A I(D), 55V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: BUK6E3R4-40C127 OMO.#: OMO-BUK6E3R4-40C127-1190 |
Now Nexperia BUK6E3R4-40C - Power Field-Effect Transistor, 100A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: BUK6E3R2-55C,127 |
MOSFET N-CHAN 55V 120A |
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Mfr.#: BUK6E3R4-40C,127 |
RF Bipolar Transistors MOSFET N-CHAN 40V 100A |