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IXGA20N120B

IXGA20N120B
Mfr. #:
IXGA20N120B
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 40 Amps 1200V 2.5 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXGA20N120B Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXGA20N120B Datasheet
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Serie:
IXGA20N120
Verpackung:
Rohr
Marke:
IXYS
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
50
Unterkategorie:
IGBTs
Gewichtseinheit:
0.056438 oz
Tags
IXGA20N120B, IXGA20N12, IXGA20N1, IXGA20, IXGA2, IXGA, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 1200V 40A 150W TO263
***th Star Micro
IGBT 1200V 40A TO-263
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK Rail
***ure Electronics
NPT Series N Channel 1200 V 35 A 298 W IGBT Transistor - TO263AB
***ark
TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-263AB
***r Electronics
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
***rchild Semiconductor
HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***ical
Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(2+Tab) D2PAK T/R
***ineon SCT
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies, PG-TO263-3, RoHS
***ineon
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: 30% lower E off compared to previous generation; Short circuit withstand time 10s; Designed for operation above 30kHz; High ruggedness, temperature stable behaviour; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC for target applications | Target Applications: Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.
***ical
Trans IGBT Chip N-CH 1200V 11A 60000mW 3-Pin(2+Tab) D2PAK T/R
*** Electronic Components
IGBT Modules 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
***el Electronic
FIXED IND 2.9NH 450MA 250 MOHM
***ure Electronics
APT40GR120 Series 1200 V 88 A 210nC 500 W NPT Type IGBT - D3PAK
***p One Stop
Trans IGBT Chip N-CH 1.2KV 88A 3-Pin(2+Tab) D3PAK
*** Stop Electro
Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel
***p One Stop
Trans IGBT Chip N-CH 600V 40A 160000mW 3-Pin(2+Tab) D2PAK Tube
***ineon SCT
600V Warp 60-150 kHz Discrete IGBT in a D2Pak package, D2PAK-3, RoHS
***ure Electronics
IRG4BC40W Series 600 V 40 A Insulated Gate Bipolar Transistor - D2PAK-3
***ment14 APAC
IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:160W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:40A; Package / Case:D2-PAK; Power Dissipation Max:160W; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulsed Current Icm:160A; Rise Time:23ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 40A 208000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***or
IGBT FIELD STOP 600V 40A D2PAK
***ure Electronics
IGBT Transistors 600V 20A FSP IGBT
***ment14 APAC
IGBT, 600V, 40A, 150DEG C, 208W;
***rchild Semiconductor
Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offer optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.
Teil # Mfg. Beschreibung Aktie Preis
IXGA20N120B
DISTI # IXGA20N120B-ND		IXYS CorporationIGBT 1200V 40A 150W TO263
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$6.5220
IXGA20N120B3
DISTI # IXGA20N120B3-ND		IXYS CorporationIGBT 1200V 36A 180W TO263
RoHS: Compliant
Min Qty: 50
Container: Tube		Temporarily Out of Stock
  • 50:$4.3706
IXGA20N120B
DISTI # 747-IXGA20N120B		IXYS CorporationIGBT Transistors 40 Amps 1200V 2.5 Rds
RoHS: Compliant		0
    IXGA20N120B3
    DISTI # 747-IXGA20N120B3    		IXYS CorporationIGBT Modules GenX3 1200V IGBTs62
    • 1:$6.4900
    • 10:$5.3400
    • 25:$4.7600
    • 50:$4.3700
    • 100:$3.7900
    • 250:$3.5900
    • 500:$3.3000
    • 1000:$3.0100
    • 2500:$2.5500
    Bild Teil # Beschreibung
    IXGA20N120B3

    Mfr.#: IXGA20N120B3

    OMO.#: OMO-IXGA20N120B3

    		 IGBT Modules GenX3 1200V IGBTs
    IXGA20N120A3

    Mfr.#: IXGA20N120A3

    OMO.#: OMO-IXGA20N120A3

    		 IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 1200V 20A
    IXGA28N60A3

    Mfr.#: IXGA28N60A3

    OMO.#: OMO-IXGA28N60A3

    		 IGBT Transistors DISC IGBT PT-LOW FREQUENCY
    IXGA20N120A3-TRL

    Mfr.#: IXGA20N120A3-TRL

    OMO.#: OMO-IXGA20N120A3-TRL

    		 IGBT Transistors IXGA20N120A3 TRL
    IXGA20N120B3-TRL

    Mfr.#: IXGA20N120B3-TRL

    OMO.#: OMO-IXGA20N120B3-TRL

    		 IGBT Transistors IXGA20N120B3 TRL
    IXGA20N120

    Mfr.#: IXGA20N120

    OMO.#: OMO-IXGA20N120

    		 IGBT Transistors 40 Amps 1200V 2.5 Rds
    IXGA24N60C

    Mfr.#: IXGA24N60C

    OMO.#: OMO-IXGA24N60C-IXYS-CORPORATION

    		 IGBT 600V 48A 150W TO263AA
    IXGA20N120B3

    Mfr.#: IXGA20N120B3

    OMO.#: OMO-IXGA20N120B3-IXYS-CORPORATION

    		 IGBT Modules GenX3 1200V IGBTs
    IXGA20N120B

    Mfr.#: IXGA20N120B

    OMO.#: OMO-IXGA20N120B-IXYS-CORPORATION

    		 IGBT Transistors 40 Amps 1200V 2.5 Rds
    IXGA20N120

    Mfr.#: IXGA20N120

    OMO.#: OMO-IXGA20N120-IXYS-CORPORATION

    		 IGBT Transistors 40 Amps 1200V 2.5 Rds
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3500
    Menge eingeben:
    Der aktuelle Preis von IXGA20N120B dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    50
    5,96 $
    298,00 $
    100
    5,89 $
    589,00 $
    250
    5,36 $
    1 340,00 $
    500
    4,93 $
    2 465,00 $
    1000
    4,30 $
    4 300,00 $
    2500
    4,24 $
    10 600,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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