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TPWR8004PL,L1Q

TPWR8004PL,L1Q
Mfr. #:
TPWR8004PL,L1Q
Hersteller:
Toshiba
Beschreibung:
MOSFET N-CH Mosfet 40V 150A 8DSOP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TPWR8004PL,L1Q Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TPWR8004PL,L1Q DatasheetTPWR8004PL,L1Q Datasheet (P4-P6)TPWR8004PL,L1Q Datasheet (P7-P9)TPWR8004PL,L1Q Datasheet (P10)
ECAD Model:
Mehr Informationen:
TPWR8004PL,L1Q Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DSOP Advance-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
150 A
Rds On - Drain-Source-Widerstand:
800 uOhms
Vgs th - Gate-Source-Schwellenspannung:
1.4 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
103 nC
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
170 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
0.73 mm
Länge:
5 mm
Serie:
TPWR8004PL
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
Toshiba
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
13 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
63 ns
Typische Einschaltverzögerungszeit:
26 ns
Gewichtseinheit:
0.003457 oz
Tags
TPWR80, TPWR8, TPWR, TPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 40V 340A 8-Pin DSOP Advance
***
TRANS POWER MOSFET
***ineon SCT
40V, N-Ch, 2.1 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T, PG-TO263-7, RoHS
***et
Trans MOSFET N-CH 40V 160A 7-Pin(6+Tab) TO-263
*** Electronic Components
MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T
***ronik
MOSFET 40V 2.4mOHM AECQ TO263 RoHSconf
***i-Key
OPTLMOS N-CHANNEL POWER MOSFET
***ineon
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.
***ure Electronics
Single N-Channel 40 V 1.4 mOhm 150 nC HEXFET® Power Mosfet - D2PAK-7
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
***el Electronic
Transistor: N-MOSFET; unipolar; 40V; 195A; 231W; D2PAK-7
*** Stop Electro
Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 231 W
***ark
T&R / MOSFET, 40V, 195A, 1.4 mOhm, 150 nC Qg, D2-7pin
***p One Stop Global
Trans MOSFET N-CH Si 40V 295A 7-Pin(6+Tab) D2PAK T/R
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***nell
MOSFET, N-CH, 40V, 195A, 7-D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:231W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +175°C
***(Formerly Allied Electronics)
IRLS3034PBF N-channel MOSFET Transistor; 343 A; 40 V; 3-Pin D2PAK
***roFlash
Single N-Channel 40 V 1.7 mOhm 108 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***nell
MOSFET, N-CH 40V 195A D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 2.5V; Powe
***ineon
Benefits: Optimized for Logic Level Drive; Very Low RDS(ON) at 4.5V VGS; Superior R*Q at 4.5V VGS; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free | Target Applications: Battery Operated Drive
***ical
Trans MOSFET N-CH 40V 306A 7-Pin(6+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET 40V, 306A, 1.6mΩ
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ure Electronics
N-Channel 40 V 1.7 mOhm STripFET™ III Power Mosfet - H2PAK-6
***ical
Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) H2PAK T/R
***ark
MOSFET, N CH, 40V, 180A, H2PAK-6; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
***icroelectronics
Automotive-grade N-channel 40 V, 1.6 mOhm typ., 160 A STripFET F3 PowerMOSFET in D2PAK package
***ark
MOSFET Transistor, N Channel, 160 A, 40 V, 2.5 mohm, 10 V, 4 V
***Yang
Trans MOSFET N-CH 40V 160A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 160A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
TPW MOSFETs
Toshiba's TPW MOSFETs features 8-pin DSOP Advance packages for the U-MOSVIII-H and U-MOSIX-H Series MOSFETs. The are designed for high-efficiency DC-DC converters, switching voltage regulators and motor drivers. They deliver high-speed switching, a small gate charge, and low on-resistance.
Teil # Mfg. Beschreibung Aktie Preis
TPWR8004PL,L1Q
DISTI # V72:2272_13896533		Toshiba America Electronic ComponentsMOSFET N-CH 40V 150A 8DSOP4496
  • 3000:$1.6700
  • 1000:$1.7190
  • 500:$2.0510
  • 250:$2.3740
  • 100:$2.5930
  • 25:$2.8689
  • 10:$2.8710
  • 1:$3.5390
TPWR8004PL,L1Q
DISTI # TPWR8004PLL1QCT-ND		Toshiba America Electronic ComponentsMOSFET N-CH 40V 150A 8DSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1646In Stock
  • 1000:$1.8746
  • 500:$2.2227
  • 100:$2.7450
  • 10:$3.3480
  • 1:$3.7500
TPWR8004PL,L1Q
DISTI # TPWR8004PLL1QDKR-ND		Toshiba America Electronic ComponentsMOSFET N-CH 40V 150A 8DSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1646In Stock
  • 1000:$1.8746
  • 500:$2.2227
  • 100:$2.7450
  • 10:$3.3480
  • 1:$3.7500
TPWR8004PL,L1Q
DISTI # TPWR8004PLL1QTR-ND		Toshiba America Electronic ComponentsMOSFET N-CH 40V 150A 8DSOP
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.8200
TPWR8004PL,L1Q
DISTI # 30342424		Toshiba America Electronic ComponentsMOSFET N-CH 40V 150A 8DSOP4496
  • 3000:$1.6700
  • 1000:$1.7190
  • 500:$2.0510
  • 250:$2.3740
  • 100:$2.5930
  • 25:$2.8689
  • 10:$2.8710
  • 4:$3.5390
TPWR8004PL,L1Q(M
DISTI # 30604438		Toshiba America Electronic ComponentsTPWR8004PL,L1Q(M3077
  • 500:$2.3715
  • 100:$2.5245
  • 50:$2.9453
  • 10:$3.3022
  • 7:$4.0927
TPWR8004PL,L1Q
DISTI # TPWR8004PL,L1Q		Toshiba America Electronic ComponentsTrans MOSFET N-CH 40V 150A 8-Pin DSOP - Tape and Reel (Alt: TPWR8004PL,L1Q)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.9900
  • 10000:$1.8900
  • 20000:$1.7900
  • 30000:$1.6900
  • 50000:$1.5900
TPWR8004PL,L1Q
DISTI # 757-TPWR8004PLL1Q		Toshiba America Electronic ComponentsMOSFET N-CH Mosfet 40V 150A 8DSOP
RoHS: Compliant		6097
  • 1:$3.6400
  • 10:$2.9300
  • 100:$2.6700
  • 250:$2.4100
  • 500:$2.1600
  • 1000:$1.8200
  • 2500:$1.7300
  • 5000:$1.6700
TPWR8004PL,L1Q(M
DISTI # C1S751201142580		Toshiba America Electronic ComponentsMOSFETs Silicon N-channel MOS (U-MOS 4-H)
RoHS: Not Compliant		3077
  • 2000:$1.7600
  • 500:$1.8600
  • 100:$1.9800
  • 50:$2.3100
  • 10:$2.5900
  • 1:$3.2100
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von TPWR8004PL,L1Q dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,46 $
3,46 $
10
2,79 $
27,90 $
100
2,51 $
251,00 $
500
1,95 $
975,00 $
1000
1,62 $
1 620,00 $
2500
1,51 $
3 775,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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