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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| NTGD1100LT1G DISTI # V72:2272_07304737 | ON Semiconductor | Trans MOSFET N/P-CH 8V 6-Pin TSOP T/R RoHS: Compliant | 3000 |
|
| NTGD1100LT1G DISTI # V36:1790_07304737 | ON Semiconductor | Trans MOSFET N/P-CH 8V 6-Pin TSOP T/R RoHS: Compliant | 0 |
|
| NTGD1100LT1G DISTI # NTGD1100LT1GOSCT-ND | ON Semiconductor | MOSFET N/P-CH 8V 3.3A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 17825In Stock |
|
| NTGD1100LT1G DISTI # NTGD1100LT1GOSDKR-ND | ON Semiconductor | MOSFET N/P-CH 8V 3.3A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 17825In Stock |
|
| NTGD1100LT1G DISTI # NTGD1100LT1GOSTR-ND | ON Semiconductor | MOSFET N/P-CH 8V 3.3A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 15000In Stock |
|
| NTGD1100LT1G DISTI # 32928161 | ON Semiconductor | Trans MOSFET N/P-CH 8V 6-Pin TSOP T/R RoHS: Compliant | 3000 |
|
| NTGD1100LT1G DISTI # NTGD1100LT1G | ON Semiconductor | Trans MOSFET N/P-CH 8V 6-Pin TSOP T/R (Alt: NTGD1100LT1G) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 9000 |
|
| NTGD1100LT1G DISTI # NTGD1100LT1G | ON Semiconductor | Trans MOSFET N/P-CH 8V 6-Pin TSOP T/R - Tape and Reel (Alt: NTGD1100LT1G) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| NTGD1100LT1G DISTI # NTGD1100LT1G | ON Semiconductor | Trans MOSFET N/P-CH 8V 6-Pin TSOP T/R - Bulk (Alt: NTGD1100LT1G) Min Qty: 1667 Container: Bulk | Americas - 0 |
|
| NTGD1100LT1G DISTI # NTGD1100LT1G | ON Semiconductor | Trans MOSFET N/P-CH 8V 6-Pin TSOP T/R (Alt: NTGD1100LT1G) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| NTGD1100LT1G DISTI # 02AC3804 | ON Semiconductor | MOSFET, N & P-CH, 8V, 3.3A, TSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:-,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes | 1033 |
|
| NTGD1100LT1G. DISTI # 29AC9045 | ON Semiconductor | Transistor Polarity:N and P Channel,Continuous Drain Current Id:-,Drain Source Voltage Vds:8V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:830mW,No. of Pins:6Pins RoHS Compliant: Yes | 0 |
|
| NTGD1100LT1G DISTI # 863-NTGD1100LT1G | ON Semiconductor | MOSFET 8V +/-3.3A P-Channel w/Level Shift RoHS: Compliant | 21357 |
|
| NTGD1100LT1G | ON Semiconductor | Small Signal Field-Effect Transistor, 3.3A I(D), 8V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 90857 |
|
| NTGD1100LT1G | ON Semiconductor | 2125 | ||
| NTGD1100LT1G | ON Semiconductor | 8V,3.3A,Load Switch with Level Shift,P Channel,TSOP6 Power MOSFET | 389 |
|
| NTGD1100LT1G DISTI # 2630398 | ON Semiconductor | MOSFET, N & P-CH, 8V, 3.3A, TSOP RoHS: Compliant | 1008 |
|
| NTGD1100LT1G DISTI # 2630398 | ON Semiconductor | MOSFET, N & P-CH, 8V, 3.3A, TSOP | 992 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: NTGD1100LT1G OMO.#: OMO-NTGD1100LT1G |
MOSFET 8V +/-3.3A P-Channel w/Level Shift |
|
Mfr.#: NTGD1100LT1 |
MOSFET N-CHAN 3.3A 8V TSOP6 |
|
|
Mfr.#: NTGD1100LT1G |
MOSFET N/P-CH 8V 3.3A 6-TSOP |
|
Mfr.#: NTGD1100LT1G-CUT TAPE |
Neu und Original |