SIZF906DT-T1-GE3

SIZF906DT-T1-GE3
Mfr. #:
SIZF906DT-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIZF906DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZF906DT-T1-GE3 DatasheetSIZF906DT-T1-GE3 Datasheet (P4-P6)SIZF906DT-T1-GE3 Datasheet (P7-P9)SIZF906DT-T1-GE3 Datasheet (P10-P12)SIZF906DT-T1-GE3 Datasheet (P13)
ECAD Model:
Mehr Informationen:
SIZF906DT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAIR-6x5-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
60 A
Rds On - Drain-Source-Widerstand:
3 mOhms, 900 uOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
- 16 V, 20 V
Qg - Gate-Ladung:
49 nC, 200 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
38 W, 83 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
GRÖSSE
Transistortyp:
2 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
130 S, 130 S
Abfallzeit:
40 ns, 30 ns
Produktart:
MOSFET
Anstiegszeit:
80 ns, 60 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns, 65 ns
Typische Einschaltverzögerungszeit:
20 ns, 45 ns
Tags
SIZF90, SIZF9, SIZF, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
MOSFET Dual N-Channel 30V 60A 8-Pin PowerPAIR T/R
***ark
Dual N-Channel 30-V (D-S) Mosfet
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIZF906DT-T1-GE3
DISTI # V36:1790_17597403
Vishay IntertechnologiesDual N-Channel 30 V (D-S) MOSFET with Schottky Diode0
  • 6000000:$0.6572
  • 3000000:$0.6574
  • 600000:$0.6747
  • 60000:$0.7038
  • 6000:$0.7085
SIZF906DT-T1-GE3
DISTI # SIZF906DT-T1-GE3CT-ND
Vishay SiliconixMOSFET 2 N-CH 30V 60A POWERPAIR
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4473In Stock
  • 1000:$0.7819
  • 500:$0.9904
  • 100:$1.1990
  • 10:$1.5380
  • 1:$1.7200
SIZF906DT-T1-GE3
DISTI # SIZF906DT-T1-GE3TR-ND
Vishay SiliconixMOSFET 2 N-CH 30V 60A POWERPAIR
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 15000:$0.6478
  • 6000:$0.6731
  • 3000:$0.7085
SIZF906DT-T1-GE3
DISTI # SIZF906DT-T1-GE3
Vishay IntertechnologiesMOSFET Dual N-Channel 30V 60A 8-Pin PowerPAIR T/R (Alt: SIZF906DT-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.6739
  • 18000:€0.7039
  • 12000:€0.7959
  • 6000:€0.9819
  • 3000:€1.3689
SIZF906DT-T1-GE3
DISTI # SIZF906DT-T1-GE3
Vishay IntertechnologiesMOSFET Dual N-Channel 30V 60A 8-Pin PowerPAIR T/R - Tape and Reel (Alt: SIZF906DT-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.6169
  • 15000:$0.6349
  • 9000:$0.6529
  • 6000:$0.6799
  • 3000:$0.7009
SIZF906DT-T1-GE3
DISTI # SIZF906DT-T1-GE3
Vishay IntertechnologiesMOSFET Dual N-Channel 30V 60A 8-Pin PowerPAIR T/R (Alt: SIZF906DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Tape and Reel
Asia - 0
    SIZF906DT-T1-GE3
    DISTI # 78-SIZF906DT-T1-GE3
    Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAIR F 6 x 5
    RoHS: Compliant
    2105
    • 1:$1.6800
    • 10:$1.3800
    • 100:$1.0600
    • 500:$0.9160
    • 1000:$0.7230
    • 3000:$0.6750
    • 6000:$0.6420
    • 9000:$0.6170
    SIZF906DTT1GE3Vishay Intertechnologies 
    RoHS: Compliant
    6000
      Bild Teil # Beschreibung
      BAV99LT1G

      Mfr.#: BAV99LT1G

      OMO.#: OMO-BAV99LT1G

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      BSS138LT1G

      Mfr.#: BSS138LT1G

      OMO.#: OMO-BSS138LT1G

      MOSFET 50V 200mA N-Channel
      FDMS9600S

      Mfr.#: FDMS9600S

      OMO.#: OMO-FDMS9600S

      MOSFET 30V PowerTrench
      FDV303N

      Mfr.#: FDV303N

      OMO.#: OMO-FDV303N

      MOSFET N-Ch Digital
      NRVBA340T3G

      Mfr.#: NRVBA340T3G

      OMO.#: OMO-NRVBA340T3G

      Schottky Diodes & Rectifiers SCHOTTKY RECT 3A 40V
      MEC1418-NU

      Mfr.#: MEC1418-NU

      OMO.#: OMO-MEC1418-NU

      32-bit Microcontrollers - MCU MEC, MIPS Core 192K SRAM, eSPI
      NCP81278TMNTXG

      Mfr.#: NCP81278TMNTXG

      OMO.#: OMO-NCP81278TMNTXG

      Switching Controllers COMPACT 2-PHASE SYNCHRONO
      TPS54540BQDDARQ1

      Mfr.#: TPS54540BQDDARQ1

      OMO.#: OMO-TPS54540BQDDARQ1

      Switching Voltage Regulators ARIES AUTO BQ 5A/42V TPS54540BQDDARQ1
      0402ZD106MAT2A

      Mfr.#: 0402ZD106MAT2A

      OMO.#: OMO-0402ZD106MAT2A-AVX

      Cap Ceramic 10uF 10V X5R 10% Pad SMD 0402 85C T/R
      C1608X7R1A225K080AE

      Mfr.#: C1608X7R1A225K080AE

      OMO.#: OMO-C1608X7R1A225K080AE-TDK

      Cap Ceramic 2.2uF 10V X7R 10% Pad SMD 0603 FlexiTerm 125°C T/R
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1985
      Menge eingeben:
      Der aktuelle Preis von SIZF906DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      1,68 $
      1,68 $
      10
      1,38 $
      13,80 $
      100
      1,06 $
      106,00 $
      500
      0,92 $
      458,00 $
      1000
      0,72 $
      723,00 $
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