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SIZ350DT-T1-GE3

SIZ350DT-T1-GE3
Mfr. #:
SIZ350DT-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V Vds 16V Vgs PowerPAIR 3 x 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIZ350DT-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIZ350DT-T1-GE3 DatasheetSIZ350DT-T1-GE3 Datasheet (P4-P6)SIZ350DT-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIZ350DT-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAIR-3x3-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
6.75 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
- 12 V, 16 V
Qg - Gate-Ladung:
20.3 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
16.7 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
GRÖSSE
Transistortyp:
2 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
46 S
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
15 ns
Typische Einschaltverzögerungszeit:
10 ns
Tags
SiZ3, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIZ350DT-T1-GE3
DISTI # V72:2272_21688015		Vishay IntertechnologiesSIZ350DT-T1-GE30
    SIZ350DT-T1-GE3
    DISTI # SIZ350DT-T1-GE3TR-ND    		Vishay SiliconixMOSFET DUAL N-CHAN 30V POWERPAIR
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		On Order
    • 6000:$0.4574
    • 3000:$0.4803
    SIZ350DT-T1-GE3
    DISTI # SIZ350DT-T1-GE3CT-ND    		Vishay SiliconixMOSFET DUAL N-CHAN 30V POWERPAIR
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$0.5300
    • 500:$0.6713
    • 100:$0.8126
    • 10:$1.0420
    • 1:$1.1700
    SIZ350DT-T1-GE3
    DISTI # SIZ350DT-T1-GE3DKR-ND    		Vishay SiliconixMOSFET DUAL N-CHAN 30V POWERPAIR
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$0.5300
    • 500:$0.6713
    • 100:$0.8126
    • 10:$1.0420
    • 1:$1.1700
    SIZ350DT-T1-GE3
    DISTI # SIZ350DT-T1-GE3    		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 30V 30A 9-Pin PowerPAIR - Tape and Reel (Alt: SIZ350DT-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$0.4179
    • 30000:$0.4299
    • 18000:$0.4419
    • 12000:$0.4609
    • 6000:$0.4749
    SIZ350DT-T1-GE3
    DISTI # 59AC7472    		Vishay IntertechnologiesDUAL N-CHANNEL 30-V (D-S) MOSFET0
    • 10000:$0.4150
    • 6000:$0.4250
    • 4000:$0.4410
    • 2000:$0.4900
    • 1000:$0.5390
    • 1:$0.5620
    SIZ350DT-T1-GE3
    DISTI # 56AC6584    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 30A, POWERPAIR,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.00563ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,RoHS Compliant: Yes5654
    • 500:$0.6270
    • 250:$0.6780
    • 100:$0.7290
    • 50:$0.8030
    • 25:$0.8770
    • 10:$0.9500
    • 1:$1.1500
    SIZ350DT-T1-GE3
    DISTI # 78-SIZ350DT-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 16V Vgs PowerPAIR 3 x 3
    RoHS: Compliant    		8
    • 1:$1.1400
    • 10:$0.9410
    • 100:$0.7220
    • 500:$0.6210
    • 1000:$0.4910
    • 3000:$0.4580
    SIZ350DT-T1-GE3
    DISTI # 2857080    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 30A, POWERPAIR5674
    • 100:£0.6890
    • 10:£0.9680
    • 1:£1.2400
    SIZ350DT-T1-GE3
    DISTI # 2857080    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 30V, 30A, POWERPAIR
    RoHS: Compliant    		5654
    • 500:$1.0900
    • 100:$1.3900
    • 5:$1.7600
    Bild Teil # Beschreibung
    SIZ350DT-T1-GE3

    Mfr.#: SIZ350DT-T1-GE3

    OMO.#: OMO-SIZ350DT-T1-GE3

    		 MOSFET 30V Vds 16V Vgs PowerPAIR 3 x 3
    SIZ350DT-T1-GE3

    Mfr.#: SIZ350DT-T1-GE3

    OMO.#: OMO-SIZ350DT-T1-GE3-VISHAY

    		 MOSFET DUAL N-CHAN 30V POWERPAIR
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1991
    Menge eingeben:
    Der aktuelle Preis von SIZ350DT-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,14 $
    1,14 $
    10
    0,94 $
    9,41 $
    100
    0,72 $
    72,20 $
    500
    0,62 $
    310,50 $
    1000
    0,49 $
    491,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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