OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IXFH32N100X

IXFH32N100X
Mfr. #:
IXFH32N100X
Hersteller:
Littelfuse
Beschreibung:
MOSFET 1000V 32A TO-247 Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFH32N100X Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXFH32N100X Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1000 V
Id - Kontinuierlicher Drainstrom:
32 A
Rds On - Drain-Source-Widerstand:
220 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
130 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
890 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
X-Klasse
Transistortyp:
1 N-Channel
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
14 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
12 ns
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
80 ns
Typische Einschaltverzögerungszeit:
29 ns
Tags
IXFH32N, IXFH32, IXFH3, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Teil # Mfg. Beschreibung Aktie Preis
IXFH32N100X
DISTI # IXFH32N100X-ND		IXYS CorporationMOSFET 1KV 32A ULTRA JCT TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		30In Stock
  • 510:$10.7735
  • 120:$12.6310
  • 30:$13.7457
  • 10:$14.8600
  • 1:$16.3500
IXFH32N100X
DISTI # 747-IXFH32N100X		IXYS CorporationMOSFET 1000V 32A TO-247 Power MOSFET
RoHS: Compliant		56
  • 1:$18.8000
  • 10:$17.0900
  • 25:$15.8000
  • 50:$14.5400
  • 100:$14.1900
  • 250:$13.0000
  • 500:$11.8000
Bild Teil # Beschreibung
MCP3221A0T-E/OT

Mfr.#: MCP3221A0T-E/OT

OMO.#: OMO-MCP3221A0T-E-OT

 Analog to Digital Converters - ADC 12-bit ADC I2C Single Channel
DST1045S-A

Mfr.#: DST1045S-A

OMO.#: OMO-DST1045S-A

 Schottky Diodes & Rectifiers 10A 45V TO-277B
MIKROE-2873

Mfr.#: MIKROE-2873

OMO.#: OMO-MIKROE-2873

 Digital Potentiometer Development Tools DIGI POT 4 click
DSC6083JE2A-032K768

Mfr.#: DSC6083JE2A-032K768

OMO.#: OMO-DSC6083JE2A-032K768

 Standard Clock Oscillators MEMS Oscillator, Ultra Low Power, LVCMOS, -20C-70C, 25ppm, 2.5x2.0mm
172765-3121

Mfr.#: 172765-3121

OMO.#: OMO-172765-3121-1190

 MINIFIT TPA 2.0 CRP TERM BRAS 18-20 S CN - Bulk (Alt: 1727653121)
DSC6083JE2A-032K768

Mfr.#: DSC6083JE2A-032K768

OMO.#: OMO-DSC6083JE2A-032K768-MICROCHIP-TECHNOLOGY

 MEMS Oscillator, Ultra Low Power, LVCMOS, -20C-70C, 25ppm, 2.5x2.0mm
MCP3221A0T-E/OT

Mfr.#: MCP3221A0T-E/OT

OMO.#: OMO-MCP3221A0T-E-OT-MICROCHIP-TECHNOLOGY

 ADC 12BIT I2C INTERFACE SOT23-5
DST1045S-A

Mfr.#: DST1045S-A

OMO.#: OMO-DST1045S-A-LITTELFUSE

 45V 10A ULTRALOW SCHOTTKY DSUL
MIKROE-2873

Mfr.#: MIKROE-2873

OMO.#: OMO-MIKROE-2873-MIKROELEKTRONIKA

 DIGI POT 4 CLICK
PBO-1-S5-B

Mfr.#: PBO-1-S5-B

OMO.#: OMO-PBO-1-S5-B-CUI

 AC-DC, 1 W, 5 VDC, SINGLE OUTPUT
Verfügbarkeit
Aktie:
56
Auf Bestellung:
2039
Menge eingeben:
Der aktuelle Preis von IXFH32N100X dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
18,80 $
18,80 $
10
17,09 $
170,90 $
25
15,80 $
395,00 $
50
14,54 $
727,00 $
100
14,19 $
1 419,00 $
250
13,00 $
3 250,00 $
500
11,80 $
5 900,00 $
1000
10,77 $
10 770,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Beginnen mit
Neueste Produkte
More Newest Products
Top